NJ3600L

Databook.fxp 1/13/99 2:09 PM Page F-48 F-48 01/99 NJ3600L Process Silicon Junction Field-Effect Transistor ¥ Large Capacitance Detector Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D S-D S-D G Device in this Databook based on the NJ3600L Process. Datasheet IF3601 IF3602 G D-S D-S D-S Die Size = 0.074" X 0.074" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage rds(on) gfs Ciss Crss eN ¯ 1 750 650 80 0.35 4 Ω mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 50 – 0.5 Min – 15 Typ – 22 100 1000 1000 –3 Max Unit V pA mA V NJ3600L Process Test Conditions IG = 1 µA, VDS = ØV VGS = 10V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA ID = 1 mA, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 30 Hz nV/√HZ VDG = 3V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-49 01/99 F-49 NJ3600L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð1.25 V Gfs as a Function of VGS(OFF) 200 Transconductance in mS 375 VGS = Ø V Drain Current in mA 300 VGS = –0.3 V 225 VGS = –0.6 V 150 VGS = –0.9 V 75 VGS = –1.2 V 0 2 4 6 8 150 100 VDG = 10 V, ID = 20 mA 50 0 – 0.4 – 0.8 – 1.2 – 1.6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 500 400 300 200 100 Transconductance in mS 250 Gfs as a Function of IDSS 200 150 VDG = 10 V, Id = 20 mA 100 0 – 0.5 –1 – 1.5 –2 0 100 200 300 400 Drain Source Cutoff Voltage in Volts Drain Saturation Current in mA Noise as a Function of Frequency 0.6 Noise Voltage in nV/√Hz Input Capacitance in pF VDG = 3 V ID = 5 mA 0.4 1000 Input Capacitance as a Function of VGS VDG = Ø V 800 600 400 200 0.2 10 100 1K Frequency in Hz 10K 100K 0 –4 –8 – 12 – 16 Gate Source Voltage in Volts