Databook.fxp 1/13/99 2:09 PM Page F-24
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01/99
NJ42 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier ¥ High Breakdown Voltage
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
S D S
Die Size = 0.032" X 0.032" All Bond Pads = 0.004", Dia. Substrate is also Gate.
Devices in this Databook based on the NJ42 Process. Datasheet
2N6449, 2N6450 IFN6449, IFN6450
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN ¯ 800 6 2 10 10 5 µS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 –2 Min – 300 Typ – 400 –1 – 10 10 – 12 Max Unit V nA mA V
NJ42 Process Test Conditions IG = 1 µA, VDS = ØV VGS = – 150V, VDS = ØV VDS = 30V, VGS = ØV VDS = 30V, ID = 1 nA
VDS = 30V, VGS = ØV VDS = 30V, VGS = ØV VDS = 30V, VGS = ØV
f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
nV/√HZ VDS = 15V, VGS = ØV
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Databook.fxp 1/13/99 2:09 PM Page F-25
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NJ42 Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of VDS
VGS(OFF) = Ð4.2 V
Gfs as a Function of VGS(OFF) 1.2 Transconductance in mS
3.0 VGS = Ø V Drain Current in mA 2.0 VGS = –1 V VGS = –2 V 1.0 VGS = –3 V VGS = –4 V 0 5 10 15 20
1.0 0.8 0.6 0.4 0.2 2 4 6 8 10 12
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current in mA
8
Zero Gate Voltage Drain Current in mA
Drain Saturation Current as a Function of VGS(OFF)
Drain Saturation Current as a Function of Temperature
16 VDS = 150 V VDS = 30 V 12 IDSS = 9 mA IDSS = 5.5 mA IDSS = 2.5 mA – 25 0 75 125 175
6
4
8
2
4
–2
–4
–6
–8
– 10
– 75
Gate Source Cutoff Voltage in Volts
Free Air Temperature in °C
Output Admittance as a Function of VGS 1.0 Output Admittance in mS 0.8 0.6 0.4 IDSS = 2.5 mA 0.2 IDSS = 5.5 mA 10 8 6 4 2
Capacitance as a Function of VGS VDS = 30 V VDS = 50 V
Capacitance in pF
0
10
20
30
40
50
– 0.1
–1 Gate Source Voltage in Volts
– 10
– 20
Drain Source Voltage in Volts
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