SMPJ177

InterFET Product Folder Technical Support J176-7 Order Now J176, J177 P-Channel JFET Features • • • • • InterFET P0099F Geometry Low Noise: 8 nV/√Hz Typical Low Rds(on): 150 Ohms Typical RoHS Compliant SMT, TH, and Bare Die Package options. SOT23 Top View Source 1 3 Gate Drain Applications 2 • Choppers • Commutators • Analog Switches TO-92 Bottom View Description Drain 3 The 30V InterFET J176 and J177 JFET’s are targeted for high gain low noise switching, commutator, and chopper applications. Gate 2 Source 1 Product Summary BVGSS IDSS VGS(off) Parameters Gate to Source Breakdown Voltage Drain to Source Saturation Current Gate to Source Cutoff Voltage J176 Min 30 -2 1 J177 Min 30 -1.5 0.8 Unit V mA V Ordering Information Custom Part and Binning Options Available Part Number J176; J177 SMPJ176; SMPJ177 SMPJ176TR; SMPJ177TR J176COT; J177COT J176CFT; J177CFT Description Through-Hole Surface Mount 7“ Tape and Reel: Max 3,000 Pieces 13” Tape and Reel: Max 9,000 Pieces Chip Orientated Tray (COT Waffle Pack) Chip Face-up Tray (CFT Waffle Pack) Case TO-92 SOT23 SOT23 COT CFT Packaging Bulk Bulk Minimum 1,000 Pieces Tape and Reel 400/Waffle Pack 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35089.R00 InterFET Product Folder Technical Support J176-7 Order Now Electrical Characteristics Maximum Ratings (@ TA = 25°C, Unless otherwise specified) VRGS IFG PD P TJ TSTG Parameters Reverse Gate Source and Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Operating Junction Temperature Storage Temperature Value 30 50 360 3.27 -55 to 125 -65 to 200 Unit V mA mW mW/°C °C °C Static Characteristics (@ TA = 25°C, Unless otherwise specified) J176 V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) Parameters Gate to Source Breakdown Voltage Gate to Source Reverse Current Gate to Source Cutoff Voltage Drain to Source Saturation Current Drain Cutoff Current Conditions Min VDS = 0V, IG = 1μA 30 J177 Max Min Max 30 VGS = 20V, VDS = 0V Unit V 1 1 nA VDS = -15V, ID = -10nA 1 4 0.8 2.25 V VGS = 0V, VDS = -15V (Pulsed) -2 -35 -1.5 -20 mA -1 nA Max Unit 300 Ω VDS = -15V, VGS = 10V -1 Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified) J176 RDS(ON) Cgd Parameters Drain to Source ON Resistance Drain Gate Capacitance Cgs Input Capacitance Cgd + Cgs Drain + Source Gate Capacitance td(ON) Turn ON Delay Time tr Rise Time td(OFF) Turn OFF Delay Time tf Fall Time J176-7 Document Number: IF35089.R00 Conditions VDS