VCR11

Databook.fxp 1/13/99 2:09 PM Page C-10 C-10 01/99 VCR11N N-Channel Silicon Voltage Controlled Resistor JFET ¥ ¥ ¥ ¥ Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 15 V 10 mA 300 mW 2.4 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Static Drain Source ON Resistance Ratio VCR11N Min V(BR)GSS IGSS VGS(OFF) rDS(MIN) rDS(MAX) –8 .95 .95 – 25 – 0.2 – 12 1 1 Max Unit V nA V Process NJ26 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV ID = 1 µA, VDS = – 10V VDS = 100 mV, rDS1 = 200Ω VGS1 = VGS2, rDS1 = 2 kΩ Ω pF pF Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance rds(on) Cdg Csg 70 200 7.5 7.5 VGS = ØV, ID = ØA VDG = 10V, IS = ØA VGS = 10V, ID = ØA f = 1 kHz f = 1 MHz f = 1 MHz TOÐ71 Package Dimensions in Inches (mm) Pin Configuration 1 Source , 2 Drain 1, 3 Gate 1, 5 Source 2, 6 Drain 2, 7 Gate 2 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com