VCR7N

Databook.fxp 1/14/99 11:33 AM Page C-8 C-8 01/99 VCR2N, VCR4N, VCR7N N-Channel Silicon Voltage Controlled Resistor JFET ¥ ¥ ¥ ¥ Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 15 V 10 mA 300 mW 2.4 mW/°C VCR2N At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance rds(on) Cdg Csg 20 60 7.5 7.5 V(BR)GSS IGSS VGS(OFF) –1 NJ72 Min – 15 –5 – 3.5 Max VCR4N NJ16 Min – 15 – 0.2 – 3.5 –7 Max Unit V nA V Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV ID = – 1 µA, VDS = 10V 200 600 3 3 Ω pF pF VGS = ØV, ID = ØA VDG = 10V, IS = ØA VDG = 10V, ID = ØA f = 1 kHz f = 1 MHz f = 1 MHz VCR7N At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance rds(on) Cdg Csg 4000 8000 1.5 1.5 Ω pF pF VGS = ØV, ID = ØA VDG = 10V, IS = ØA VDG = 10V, ID = ØA f = 1 kHz f = 1 MHz f = 1 MHz V(BR)GSS IGSS VGS(OFF) – 2.5 NJ01 Min – 15 – 0.1 –5 Max Unit V nA V Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV ID = – 1 µA, VDS = 10V VCR2N & VCR4N TOÐ18 Package See Section G for Outline Dimensions VCR7N TOÐ72 Package See Section G for Outline Dimensions Pin Configuration 1 Source, 2 Drain, 3 Gate & Case Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com