5962D9567101VPC

HS-2600RH Data Sheet August 1999 File Number 3650.1 Radiation Hardened Wideband, High Impedance Operational Amplifier HS-2600RH is a radiation hardened internally compensated bipolar operational amplifier that features very high input impedance coupled with wideband AC performance. The high resistance of the input stage is complemented by low offset voltage (4mVmax at 25oC for HS-2600RH) and low bias and offset current (10nA max at 25oC for HS-2600RH) to facilitate accurate signal processing. Offset voltage can be reduced further by means of an external nulling potentiometer. The 4V/µs minimum slew rate at 25oC and the minimum open loop gain of 100kV/V at 25oC enables the HS-2600RH to perform high gain amplification of fast, wideband signals. These dynamic characteristics, coupled with fast settling times, make these amplifiers ideally suited to pulse amplification designs as well as high frequency or video applications. The frequency response of the amplifier can be tailored to exact design requirements by means of an external bandwidth control capacitor. Other high performance designs such as high gain, low distortion audio amplifiers, high-Q and wideband active filters and high speed comparators, are excellent uses of this part. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95671. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp Features • Electrically Screened to SMD # 5962-95671 • QML Qualified per MIL-PRF-38535 Requirements • High Input Impedance . . . . . . . . . . . . . . . . . 100MΩ (Min) 500MΩ (Typ) • High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . 3V/µs (Min) 7V/µs (Typ) • Low Input Bias Current . . . . . . . . . . . . . . . . . . 10nA (Max) 1nA (Typ) • Low Input Offset Current (HS-2600RH) . . . . . . 4mV (Max) • Wide Unity Gain Bandwidth . . . . . . . . . . . . . .12MHz (Typ) • Output Short Circuit Protection • Total Gamma Dose. . . . . . . . . . . . . . . . . . . . . 10kRAD(Si) Applications • Video Amplifier • Pulse Amplifier • High-Q Active Filters • High Speed Comparators • Low Distortion Oscillators Pinout HS7-2600RH (CERDIP) GDIP1-T8 OR HS7B-2600RH (SBDIP) CDIP2-T8 TOP VIEW Ordering Information ORDERING NUMBER 5962D9567101VPA 5962D9567101VPC INTERNAL MKT. NUMBER HS7-2600RH-Q HS7B-2600RH-Q TEMP. RANGE (oC) -55 to 125 -55 to 125 BAL -IN +IN V1 2 3 4 8 COMP V+ OUT BAL – + 7 6 5 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-2600RH Test Circuit +VCC 0.1 100K 1 OPEN 2 S3A S1 OPEN 2 S2 OPEN 2 100K 2 1 OPEN S3B VAC 2 1 1 1 2 S5A DUT 1 S6 + OPEN 1 S5B 1 S8 2 10K x2 EOUT 5K 2 1 S4 50K ALL RESISTORS = ±1% (Ω) ALL CAPACITORS = ±10% (µF) OPEN 3 1 S9 2 V2 1 S7 3 BAL 2 ADJ 2 500K -1 + + BUFFER OPEN 1 2K 100pF† FOR LOOP STABILITY, USE MIN VALUE CAPACITOR TO PREVENT OSCILLATION 50K † INCLUDES STRAY CAPACITANCES -1/10 ACOUT V1 2K 0.1 1 -VEE 100 100 NOTE: For Detailed Information, Refer to HS-2600RH Test Technical Brief. Test Waveforms SIMPLIFIED TEST CIRCUIT VAC + 2kΩ VOUT 100pF SLEW RATE WAVEFORMS +5.0V INPUT -5.0V +SL -SL +5.0V +5.0V 75% 25% -5.0V ∆V OUTPUT ∆V +5.0V 75% 25% -5.0V -5.0V ∆T SR = ∆V ∆T ∆T OVERSHOOT, RISE AND FALL TIME WAVE FORMS VFINAL = +200mV 0V 10% OUTPUT -200mV tr,+OS tf,-OS tr tf 10% 0V 90% VPEAK -200mV +200mV INPUT 0V 0V VPEAK 90% NOTE: Measured on both positive and negative transitions. Capacitance at compensation pin should be minimized. 2 HS-2600RH Burn-In Circuit HS-2600RH CERDIP 1 2 R1 3 VD2 4 C2 + 8 7 6 5 C3 C1 V+ D1 NOTES: 1. R1 = 1MΩ, ±5%, 1/4W (Min) 2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min) 3. C3 = 0.01µF/Socket (10%) 4. D1 = D2 = IN4002 or Equivalent/Board 5. | (V+) - (V-) | = 30V Irradiation Circuit C 1 2 R 3 V2 C 4 6 5 8 C 7 V1 GND NOTES: 6. V1 = +15V ±10% 7. V2 = -15V ±10% 8. R = 1MΩ ±5% 9. C = 0.1µF ±10% 3 HS-2600RH Schematic Diagram COMPENSATION V+ BAL R1 1K Q1 Q3 Q4 Q37 Q5 +INPUT Q8 Q13 Q12 Q16 Q11 Q6 Q30 Q7 Q9 Q44 Q10 Q17 Q18 Q15 R7 1.35 R19 2.5K RP1 R8 1K Q20 R9 4.5K Q27 Q24 Q46 R11 4.0K Q21 Q22 Q23 Q49 R12 1.6K R13 1.6K Q48 Q50 Q51 R14 2.1K R15 800 R16 30 V-INPUT Q45 Q47 Q52 Q26 Q25 Q55 Q54 Q56 R18 30 OUT Q53 R17 30 Q29 Q31 Q28 Q36 Q32 Q35 Q33 Q43 Q57 Q2 Q40 R2 4.18K R3 1.56K R4 1.56K BAL Q39 Q38 Q41 Q42 Q59 Q58 C3 16pF C4 4pF C2 9pF R5 600 Q60 Q61 R6 30 Q19 R10 2.0K C1 16pF 4 HS-2600RH Die Characteristics DIE DIMENSIONS: 69 mils x 56 mils x 19 mils ±1 mils 1750µm x 1420µm x 483µm ±25.4µm INTERFACE MATERIALS: Glassivation: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Top Metallization: Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ Substrate: Linear Bipolar DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: