5962F0721501QXC

® ISL7119RH Data Sheet October 8, 2008 FN6607.2 Radiation Hardened High Speed Dual Voltage Comparator The ISL7119RH is a radiation hardened high speed dual voltage comparator fabricated on a single monolithic chip. It is designed to operate over a wide dual supply voltage range as well as a single 5V logic supply and ground. The open collector output stage facilitates interfacing with a variety of logic devices and has the ability to drive relays and lamps at output currents up to 25mA. The ISL7119RH is fabricated on our dielectrically isolated Rad-hard Silicon Gate (RSG) process, which provides immunity to Single Event Latch-up (SEL) and highly reliable performance in the natural space environment. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ISL7119RH are contained in SMD 5962-07215. A “hot-link” is provided on our website for downloading. Features • Electrically Screened to DSCC SMD # 5962-07215 • QML Qualified Per MIL-PRF-38535 Requirements • Radiation Environment - Total Dose. . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEL/SEB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Immune • Input Offset Voltage (VIO). . . . . . . . . . . . . . . . . 8mV (Max) • Input Bias Current (IBIAS) . . . . . . . . . . . . . .1000nA (Max) • Input Offset Current (IIO) . . . . . . . . . . . . . . . .150nA (Max) • Saturation Voltage @ ISINK = 3.2mA (VSAT) . 0.65V (Max) • Saturation Voltage @ ISINK = 25mA (VSAT) . . 1.8V (Max) • Response Time (tPD) . . . . . . . . . . . . . . . . . . . 160ns (Max) Applications • Window Detector • Level Shifter • Relay Driver Pinouts s • Lamp Driver ISL7119RH (10 LD FLATPACK GDFP1-F10 OR CDFP2-F10) TOP VIEW OUT 1 GND 1 +IN 1 -IN 1 -VS 1 2 3 4 5 10 9 8 7 6 +VS -IN 2 +IN 2 GND 2 OUT 2 Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER PART MARKING Q 5962F07 21501QXC Q 5962F07 21501VXC TEMP. RANGE (°C) -55 to +125 -55 to +125 -55 to +125 ISL7 119RHF /Proto -55 to +125 PACKAGE 10 Ld Flatpack 10 Ld Flatpack 10 Ld Flatpack 10 Ld Flatpack PKG. DWG. # K10.A K10.A K10.A K10.A 5962F0721501QXC ISL7119RHQF 5962F0721501VXC 5962F0721501V9A ISL7119RH/Proto ISL7119RHVF ISL7119RHVX ISL7119RHF/Proto 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2007, 2008. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL7119RH Die Characteristics DIE DIMENSIONS: 2030µm x 2030µm (~80 mils x 80 mils) Thickness: 483µm ± 25.4µm (19 mils ± 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ ± 1.0kÅ Top Metallization: Type: AlSiCu Thickness: 16.0kÅ ± 2kÅ Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: