5962R0052001VVC

IS-2981RH TM Data Sheet June 2000 File Number 4869.1 Radiation Hardened 8-Channel Source Driver The Star*Power Radiation Hardened IS-2981RH is a monolithic device designed for use in high-side switching applications that benefit from separate grounds for the logic and loads. The device has a 5V to 80V operating supply voltage range and is capable of sourcing -200mA continuously from each output. The outputs are controlled by active-high inputs and may be paralleled to increase the drive current. Output clamp diodes prevent device damage, when switching inductive loads. TM Features • Electrically Screened to SMD # 5962-00520 • QML Qualified Per MIL-PRF-38535 Requirements • Radiation Environment - Single Event Latch-up Immune. . . . . . . . . . . DI Process - Total Dose. . . . . . . . . . . . . . . . . . . 1 x 105 rad(Si) (Max) • Input Voltage Range . . . . . . . . . . . 0.0V to VCC (20V Max) • Supply Voltage Range . . . . . . . . . . . . . . . . . . . . 5V to 80V • Turn-on Delay Time . . . . . . . . . . . . . . . . . . . . . . 2µs (Max) • Turn-off Delay Time . . . . . . . . . . . . . . . . . . . . .11µs (Max) • Output Clamp Diode, VF . . . . . . . . . . . . . . . -1.75V (Max) Constructed with the Intersil bonded wafer, dielectrically isolated HVTDLM process, these single event latch-up immune devices have been specifically designed to provide highly reliable performance in harsh radiation environments. They are fully guaranteed for 100krad(Si) total dose performance through wafer-by-wafer radiation testing, and are production tested over the full military temperature range. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-00520. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/space.htm Applications • Drivers for Various Loads - Relays, Solenoids and Motors • Reliable Replacement of Discrete Solutions • Interfacing Between Low-Level Logic and High-Current Loads Pinout IS1-2981RH-Q (CDIP2-T18, SBDIP) TOP VIEW IN 1 1 18 OUT 1 17 OUT 2 16 OUT 3 15 OUT 4 14 OUT 5 13 OUT 6 12 OUT 7 11 OUT 8 10 GND Ordering Information ORDERING NUMBER 5962R0052001VVC 5962R0052001QVC IS1-2981RH/Proto INTERNAL MKT. NUMBER IS1-2981RH-Q IS1-2981RH-8 IS1-2981RH/Proto TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 IN 2 2 IN 3 3 IN 4 4 IN 5 5 IN 6 6 IN 7 7 IN 8 8 VCC 9 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 IS-2981RH Die Characteristics DIE DIMENSIONS: 2667µm x 5131µm (105 mils x 202 mils) Thickness: 483µm ± 25.4µm (19 mils ± 1 mil) INTERFACE MATERIALS Glassivation Type: Nitride (Si3N4) over Silox (SiO2) Nitride Thickness: 4.0kÅ ± 1.0kÅ Silox Thickness: 12.0kÅ ± 4.0kÅ Metallization Top Metal 2: Ti/AlCu Thickness: 1.6µm ± 0.02µm Metal 1: Ti/AlCu Thickness: 0.8µm ± 0.01µm Substrate HVTDLM, Bonded Wafer, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Must be tied to GND. ADDITIONAL INFORMATION Worst Case Current Density