5962R9569001VXC

HS-5104ARH TM Data Sheet August 2001 File Number 3025.4 Radiation Hardened Low Noise Quad Operational Amplifier tle 4A iadThe HS-5104ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. Its excellent noise characteristics coupled with an unique array of dynamic specifications make this amplifier well-suited for a variety of satellite system applications. Dielectrically isolated, bipolar processing makes this device immune to Single Event Latch-Up. The HS-5104ARH shows almost no change in offset voltage after exposure to 100kRAD(Si) gamma radiation, with only a minor increase in current. Complementing these specifications is a post radiation open loop gain in excess of 40K. This quad operational amplifier is available in an industry standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95690. A “hot-link” is provided on our homepage for downloading. http://www.intersil.com Features • Electrically Screened to SMD # 5962-95690 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Gamma Dose (γ) . . . . . . . . . . . . . . . . . 1 x 105RAD(Si) • Low Noise - At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 4.3nV/√Hz (Typ) - At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 0.6pA/√Hz (Typ) • Low Offset Voltage . . . . . . . . . . . . . . . . . . . . .3.0mV (Max) • High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 2.0V/µs (Typ) • Gain Bandwidth Product . . . . . . . . . . . . . . . 8.0MHz (Typ) se d raal plitho ds rpon, ior, iad, Applications • High Q, Active Filters • Voltage Regulators • Integrators • Signal Generators • Voltage References • Space Environments Ordering Information ORDERING NUMBER 5962R9569001V9A 5962R9569001VCC 5962R9569001VXC INTERNAL MKT. NUMBER HS0-5104ARH-Q HS1-5104ARH-Q HS9-5104ARH-Q TEMP. RANGE (oC) 25 -55 to 125 -55 to 125 -55 to 125 HS1-5104ARH/PROTO HS1-5104ARH/PROTO Pinouts HS-5104ARH (SBDIP) CDIP2-T14 TOP VIEW OUT 1 -IN1 +IN1 V+ +IN2 -IN2 OUT 2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT 4 -IN4 +IN4 V+IN3 -IN3 OUT 3 OUT 1 -IN1 HS-5104ARH (FLATPACK) CDFP3-F14 TOP VIEW 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT 4 -IN4 +IN4 V+IN3 -IN3 OUT 3 d, L, +IN1 V+ +IN2 -IN2 OUT 2 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2001, All Rights Reserved HS-5104ARH Burn-In Circuit 1 2 R1 3 +V C1 4 D1 R2 5 6 7 + 2 3 + 1 + 4 + 14 Irradiation Circuit +15V R4 12 11 R3 10 D2 C2 -V - - 13 + - -15V (ONE OF FOUR) - - 9 8 NOTES: 5. +V = 15V 6. -V = -15V 7. Group E Sample Size = 4 Die Per Wafer NOTES: 1. R1 = R2 = R3 = R4 = 1MW, 5%, 1/4W (Min) 2. C1 = C2 = 0.01µ F/Socket (Min) or 0.1µF/Row (Min) 3. D1 = D2 = IN4002 or Equivalent/Board 4. |(V+) - (V-)| = 31V ±1V 2 HS-5104ARH Die Characteristics DIE DIMENSIONS: 95 mils x 99 mils x 19 mils ±1 mils (2420µm x 2530µm x 483µm ±25.4µm) INTERFACE MATERIALS: Glassivation: Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Top Metallization: Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ Substrate: Bipolar Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: