82C86H

® 82C86H CMOS Octal Bus Transceiver Description The Intersil 82C86H is a high performance CMOS Octal Transceiver manufactured using a self-aligned silicon gate CMOS process (Scaled SAJI IV). The 82C86H provides a full eight-bit bi-directional bus interface in a 20 lead package. The Transmit (T) control determines the data direction. The active low output enable (OE) permits simple interface to the 80C86, 80C88 and other microprocessors. The 82C86H has gated inputs, eliminating the need for pull-up/pull-down resistors and reducing overall system operating power dissipation. June 2004 Features • Full Eight Bit Bi-Directional Bus Interface • Industry Standard 8286 Compatible Pinout • High Drive Capability - B Side IOL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA - A Side IOL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mA • Three-State Outputs • Propagation Delay . . . . . . . . . . . . . . . . . . . . . 35ns Max. • Gated Inputs - Reduce Operating Power - Eliminate the Need for Pull-Up Resistors • Single 5V Power Supply • Low Power Operation . . . . . . . . . . . . . . . ICCSB = 10µA • Operating Temperature Range - ID82C86H . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC Ordering Information PART NUMBER 8MHz ID82C86H PACKAGE TEMP. RANGE PKG DWG. # 20 Ld CERDIP -40oC to +85oC F20.3 Pinout 82C86H (CERDIP) TOP VIEW TRUTH TABLE T X A0 1 A1 2 A2 3 A3 4 A4 5 A5 6 A6 7 A7 8 OE 9 GND 10 20 VCC 19 B0 18 B1 17 B2 16 B3 15 B4 14 B5 13 B6 12 B7 11 T OE H L L A Hi-Z I O B Hi-Z O I H L H L I O X Hi-Z = Logic One = Logic Zero = Input Mode = Output Mode = Don’t Care = High Impedance PIN NAMES PIN A0-A7 B0-B7 T OE DESCRIPTION Local Bus Data I/O Pins System Bus Data I/O Pins Transmit Control Input Active Low Output Enable CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002, 2004. All Rights Reserved FN2977.2 1 82C86H Functional Diagram A0 B0 Decoupling Capacitors The transient current required to charge and discharge the 300pF load capacitance specified in the 82C86H/87H data sheet is determined by: I = C L ( dv ⁄ dt ) (EQ. 1) A1 A2 A3 A4 A5 A6 A7 B1 B2 B3 B4 B5 B6 B7 Assuming that all outputs change state at the same time and that dv/dt is constant; ( VCC × 80% ) I = C L -----------------------------------tR ⁄ tF (EQ. 2) where tR = 20ns, VCC = 5.0V, CL = 300pF on each eight outputs. I = ( 80 × 300 × 10 = 480mA – 12 ) × ( 5.0V × 0.8 ) ⁄ ( 20 × 10 –9 ) (EQ. 3) OE T VCC P VCC Gated Inputs During normal system operation of a latch, signals on the bus at the device inputs will become high impedance or make transitions unrelated to the operation of the latch. These unrelated input transitions switch the input circuitry and typically cause an increase in power dissipation in CMOS devices by creating a low resistance path between VCC and GND when the signal is at or near the input switching threshold. Additionally, if the driving signal becomes high impedance (“float” condition), it could create an indeterminate logic state at the inputs and cause a disruption in device operation. The Intersil 82C8X series of bus drivers eliminates these conditions by turning off data inputs when data is latched (STB = logic zero for the 82C82/83H) and when the device is disabled (OE = logic one for the 82C86H/87H). These gated inputs disconnect the input circuitry from the VCC and ground power supply pins by turning off the upper P-channel and lower N-channel (See Figures 1 and 2). No current flow from VCC to GND occurs during input transitions and invalid logic states from floating inputs are not transmitted. The next stage is held to a valid logic level internal to the device. D.C. input voltage levels can also cause an increase in ICC if these input levels approach the minimum VIH or maximum VIL conditions. This is due to the operation of the input circuitry in its linear operating region (partially conducting state). The 82C8X series gated inputs mean that this condition will occur only during the time the device is in the transparent mode (STB = logic one). ICC remains below the maximum ICC standby specification of 10µA during the time inputs are disabled, thereby greatly reducing the average power dissipation of the 82C8X series devices. N STB DATA IN P P INTERNAL DATA N N FIGURE 1. 82C82/83H VCC P OE P DATA IN VCC P N N N INTERNAL DATA FIGURE 2. 82C86H/87H GATED INPUTS This current spike may cause a large negative voltage spike on VCC which could cause improper operation of the device. To filter out this noise, it is recommended that a 0.1µF ceramic disc capacitor be placed between VCC and GND at each device, with placement being as near to the device as possible. 2 82C86H Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V Input, Output or I/O Voltage . . . . . . . . . . . . GND -0.5V to VCC +0.5V ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Information Thermal Resistance (Typical) θJA (oC/W) θJC (oC/W) Operating Conditions Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range . . . . . . . . . . . . . . . . . -40oC to +85oC CERDIP Package . . . . . . . . . . . . . . . . 70 16 Maximum Storage Temperature Range . . . . . . . . . -65oC to +150oC Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +175oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC Die Characteristics Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265 Gates CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. DC Electrical Specifications VCC = 5.0V ± 10%; TA = -40oC to +85oC SYMBOL VIH PARAMETER Logical One Input Voltage VIL VOH Logical Zero Input Voltage Logical One Output Voltage B Outputs A Outputs A or B Outputs VOL Logical Zero Output Voltage B Outputs A Outputs II IO ICCSB ICCOP NOTES: 1. VIH is measured by applying a pulse of magnitude = VIH(MIN) to one data input at a time and checking the corresponding device output for a valid logical “1” during valid input high time. Control pins (T, OE) are tested separately with all device data input pins at VCC -0.4 2. Typical ICCOP = 1mA/MHz of read/ cycle time. (Example: 1.0µs read/write cycle time = 1mA). Input Leakage Current Output Leakage Current Standby Power Supply Current Operating Power Supply Current -10.0 -10.0 0.45 0.45 10.0 10.0 10 1 V V µA µA µA mA/MHz IOL = 20mA IOL = 12mA VIN = GND or VCC DIP Pins 9, 11 VO = GND or VCC, OE Š Š≥ VCC -0.5V DIP Pins 1 - 8, 12 - 19 VIN = VCC or GND, VCC = 5.5V, Outputs Open TA = +25oC, Typical (See Note 2) 3.0 3.0 VCC -0.4 V V V IOH = -8mA IOH = -4mA IOH = -100µA MIN 2.0 2.2 0.8 MAX UNITS V V V TEST CONDITIONS C82C86H, I82C86H M82C86H (Note 1) Capacitance SYMBOL CIN TA = +25oC PARAMETER Input Capacitance B Inputs A Inputs 18 14 pF pF Freq = 1MHz, all measurements are referenced to device GND TYPICAL UNITS TEST CONDITIONS 3 82C86H AC Electrical Specifications VCC = 5.0V ± 10%; Freq = 1MHz: TA = -40oC to +85oC SYMBOL (1) TIVOV PARAMETER Input to Output Delay Inverting Non-Inverting (2) (3) (4) (5) (6) (7) TEHTV TTVEL TEHOZ TELOV TR, TF TEHEL Transmit/Receive Hold Time Transmit/Receive Setup Time Output Disable Time Output Enable Time Input Rise/Fall Times Minimum Output Enable High Time 82C86H 82C86H-5 NOTES: 1. All AC parameters tested as per test circuits and definitions in timing waveforms and test load circuits. Input rise and fall times are driven at 1ns/V. 2. Input test signals must switch between VIL - 0.4V and VIH +0.4V. 3. A system limitation only when changing direction. Not a measured parameter. 30 35 ns ns 5 5 5 10 5 10 30 32 30 50 20 ns ns ns ns ns ns ns Notes 1, 2 Notes 1, 2 Notes 1, 2 Notes 1, 2 Notes 1, 2 Note 3 MIN MAX UNITS TEST CONDITIONS Notes 1, 2 Timing Waveform TR, TF (6) INPUTS 2.0V 0.8V TEHEL (7) OE (1) TIVOV OUTPUTS (4) TEHOZ VOH -0.1V VOL +0.1V TEHTV (2) T TELOV (5) 3.0V 0.45V TTVEL (3) NOTE: All timing measurements are made at 1.5V unless otherwise noted. 4 82C86H Test Load Circuits A SIDE OUTPUTS TIVOV LOAD CIRCUIT 2.36V 160Ω OUTPUT 100pF (SEE NOTE) TEST POINT OUTPUT 100pF (SEE NOTE) TELOV OUTPUT HIGH ENABLE LOAD CIRCUIT 1.5V 375Ω TEST POINT TELOV OUTPUT LOW ENABLE LOAD CIRCUIT 1.5V 91Ω OUTPUT 100pF (SEE NOTE) TEST POINT TEHOZ OUTPUT LOW/HIGH DISABLE LOAD CIRCUIT 2.36V 160Ω OUTPUT 50pF (SEE NOTE) TEST POINT B SIDE OUTPUTS TIVOV LOAD CIRCUIT 2.27V 91Ω OUTPUT 300pF (SEE NOTE) TEST POINT OUTPUT 300pF (SEE NOTE) TELOV OUTPUT HIGH ENABLE LOAD CIRCUIT 1.5V 180Ω TEST POINT TELOV OUTPUT LOW ENABLE LOAD CIRCUIT 1.5V 51Ω OUTPUT 300pF (SEE NOTE) TEST POINT TEHOZ OUTPUT LOW/HIGH DISABLE LOAD CIRCUIT 2.27V 91Ω OUTPUT 50pF (SEE NOTE) TEST POINT NOTE: Includes jig and stray capacitance. Die Characteristics DIE DIMENSIONS: 138.6 x 155.5 x 19 ± 1mils METALLIZATION: Type: Si - Al Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 8kÅ ± 1kÅ 5 82C86H Metallization Mask Layout 82C86H A2 A1 A0 VCC B0 B1 B2 A3 A4 B3 B4 A5 B5 A6 A7 OE GND T B7 B6 All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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