ACS157HMSR-02

ACS157MS December 1997 Radiation Hardened Quad 2-Input Non-Inverting Multiplexer Description The Radiation Hardened ACS157MS is a Quad 2-Channel Non-Inverting Multiplexer which selects four bits of data from one of two sources under the control of a single Select pin. The Output Enable input is active LOW and controls all outputs. When E is set HIGH, all outputs are forced LOW, regardless of all other input conditions. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS157MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS157 are contained in SMD 5962-98536. A “hot-link” is provided on our homepage with instructions for downloading. http://www.intersil.com/data/sm/index.htm Features • QML Qualified Per MIL-PRF-38535 Requirements • 1.25Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-up Free Under any Conditions - Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . . . . . 100MeV/(mg/cm2) • Input Logic Levels . . . VIL = (0.3)(Vcc), VIH = (0.7)(Vcc) • Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±12mA • Quiescent Supply Current. . . . . . . . . . . . . . . . . . . .20µA • Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . . . . 14ns Applications • 4-Bit Source Selection • Data Routing • High Frequency Switching Ordering Information SMD PART NUMBER 5962F9853601VEC N/A 5962F9853601VXC N/A N/A INTERSIL PART NUMBER ACS157DMSR-02 ACS157D/Sample-02 ACS157KMSR-02 ACS157K/Sample-02 ACS157HMSR-02 TEMP. RANGE (oC) -55 to 125 25 -55 to 125 25 25 PACKAGE 16 Ld SBDIP 16 Ld SBDIP 16 Ld Flatpack 16 Ld Flatpack Die CASE OUTLINE CDIP2-T16 CDIP2-T16 CDFP4-F16 CDFP4-F16 N/A Pinouts ACS157 (SBDIP) TOP VIEW ACS157 (FLATPACK) TOP VIEW S1 1I0 2 1I1 3 1Y 4 2I0 5 2I1 6 2Y 7 GND 8 16 VCC 15 E 14 4I0 13 4I1 12 4Y 11 3I0 10 3I1 9 3Y S 1I0 1I1 1Y 2I0 2I1 2Y GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC E 4I0 4I1 4Y 3I0 3I1 3Y CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 4462 1 ACS157MS Die Characteristics DIE DIMENSIONS: Size: 2390µm x 2390µm (94 mils x 94 mils) Thickness: 525µm ±25µm (20.6 mils ±1 mil) Bond Pad: 110µm x 110µm (4.3 x 4.3 mils) METALLIZATION: Al Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm SUBSTRATE POTENTIAL: Unbiased Insulator PASSIVATION Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ±0.15µm SPECIAL INSTRUCTIONS: Bond VCC First ADDITIONAL INFORMATION: Worst Case Density: