AD7545JN

AD7545 DUCT CT E PR O RODU T E L O U TE P IT T S OBS S B ER IL LE SU s 1-888-INT IB S S n O o P om Sheet FOR A tral Applicati @inData tersil.c p n p e a t C n call il: ce or e m a TM itle D75 ) bjec 2t, ffer , ltip ng OS C) utho ) eyw s tersi rpor on, ico ucto 12-Bit, Buffered, Multiplying CMOS DAC Features The AD7545 is a low cost monolithic 12-bit, CMOS multiplying DAC with on-board data latches. Data is loaded in a single 12-bit wide word which allows interfacing directly to most 12-bit and 16-bit bus systems. Loading of the input latches is under the control of the CS and WR inputs. A logic low on these control inputs makes the input latches transparent allowing direct unbuffered operation of the DAC. • 12-Bit Resolution PART NUMBER TEMP. RANGE ( oC) PKG. NO. PACKAGE AD7545JN 0 to 70 20 Ld PDIP E20.3 AD7545KN 0 to 70 20 Ld PDIP E20.3 Functional Diagram RFB 20 AD7545 R VREF 19 12-BIT MULTIPLYING DAC 1 OUT1 2 AGND 12 WR File Number 3108.3 • Low Gain T.C. 2ppm/oC (Typ) • Fast TTL/CMOS Compatible Data Latches • Single +5V to +15V Supply • Low Power • Low Cost Part Number Information 17 18 VDD 3 DGND Pinout AD7545 (PDIP) TOP VIEW OUT 1 1 AGND 2 19 VREF DGND 3 18 VDD DB11 (MSB) 4 17 WR DB10 5 16 CS DB9 6 15 DB0 (LSB) DB8 7 14 DB1 DB7 8 13 DB2 DB6 9 12 DB3 DB5 10 11 DB4 20 RFB INPUT DATA LATCHES CS 16 ltip ng, L, OS May 2001 12 DB11 - DB0 (PINS 4 - 15) reato ) OCI O fmar ge de seO 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc. | Copyright © Intersil Americas Inc. 2001 AD7545 Absolute Maximum Ratings Thermal Information Supply Voltage (VDD to DGND). . . . . . . . . . . . . . . . . . . -0.3V, +17V Digital Input Voltage to DGND . . . . . . . . . . . . . . . . -0.3V, VDD +0.3V VRFB , VREF to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25V VPIN1 to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V, VDD +0.3V AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V, VDD +0.3V Thermal Resistance (Typical, Note 1) θJA ( oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 Maximum Junction Temperature (PDIP Package) . . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 70oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. Electrical Specifications TA = See Note 2, VREF = +10V, VOUT1 = 0V, AGND = DGND, Unless Otherwise Specified VDD = +5V (NOTE 7) PARAMETER TEST CONDITIONS VDD = +15V (NOTE 7) MIN TYP MAX MIN TYP MAX UNITS 12 - - 12 - - Bits J - - ±2 - - ±2 LSB K - - ±1 - - ±1 LSB STATIC PERFORMANCE Resolution Relative Accuracy J 10-Bit Monotonic TMIN to TMAX - - ±4 - - ±4 LSB K 12-Bit Monotonic TMIN to TMAX - - ±1 - - ±1 LSB J DAC Register Loaded with 1111 1111 1111 - - ±20 - - ±25 LSB K Gain Error is Adjustable Using the Circuits of Figures 5 and 6 (Note 3) - - ±10 - - ±15 LSB Gain Temperature Coefficient ∆Gain/∆Temperature Typical Value is 2ppm/oC for VDD = +5V (Note 4) - - ±5 - - ±10 ppm/oC DC Supply Rejection ∆Gain/∆VDD ∆VDD = ±5% 0.015 - 0.03 0.01 - 0.02 % DB0 - DB11 = 0V; WR, CS = 0V (Note 2) - - 50 - - 50 nA To 1/2 LSB, OUT1 LOAD = 100Ω, DAC Output Measured from Falling Edge of WR, CS = 0V (Note 4) - - 2 - - 2 µs - - 300 - - 250 ns Differential Nonlinearity Gain Error (Using Internal RFB) Output Leakage Current at OUT1 J, K DYNAMIC CHARACTERISTICS Current Settling Time Propagation Delay from Digital Input OUT1 LOAD = 100Ω , Change to 90% of Final Analog Output CEXT = 13pF (Notes 4 and 5) Digital to Analog Glitch Impulse VREF = AGND - 400 - - 250 - nV/s AC Feedthrough at OUT1 VREF = ±10V, 10kHz Sinewave - 5 - - 5 - mVP-P - - 70 - - 70 pF - - 200 - - 200 pF ANALOG OUTPUTS Output Capacitance COUT1 DB0 - DB11 = 0V, WR, CS = 0V (Note 4) DB0 - DB11 = VDD , WR, CS = 0V (Note 4) 2 AD7545 Electrical Specifications TA = See Note 2, VREF = +10V, VOUT1 = 0V, AGND = DGND, Unless Otherwise Specified (Continued) V DD = +5V (NOTE 7) VDD = +15V (NOTE 7) MIN TYP MAX MIN TYP MAX UNITS Input Resistance TC = -300ppm/oC (Typ) 7 - - 7 - - kΩ Typical Input Resistance = 11kΩ - - 25 - - 25 kΩ Input High Voltage, VIH 2.4 - - - - 13.5 V Input Low Voltage, VIL - - 0.8 - - 1.5 V ±1 - ±10 ±1 - ±10 µA VIN = 0 (Note 4) - - 7 - - 7 pF WR, CS VIN = 0 (Note 4) - - 20 - - 20 pF PARAMETER TEST CONDITIONS REFERENCE INPUT Input Resistance (Pin 19 to GND) DIGITAL INPUTS Input Current, IIN Input Capacitance VIN = 0 or VDD (Note 6) DB0 DB11 SWITCHING CHARACTERISTICS (Note 4) Chip Select to Write Setup Time, tCS See Figure 1 380 200 - 200 120 - ns Chip Select to Write Hold Time, tCH See Figure 1 0 - - 0 - - ns Write Pulse Width, tWR tCS ≥ tWR , tCH ≥ 0, See Figure 1 400 175 - 240 100 Data Setup Time, tDS See Figure 1 210 100 - 120 60 - ns Data Hold Time, tDH See Figure 1 10 - - 10 - - ns All Digital Inputs VIL or VIH - - 2 - - 2 mA All Digital Inputs 0V or VDD - 100 500 - 100 500 µA All Digital Inputs 0V or VDD - 10 - - 10 - µA ns POWER SUPPLY CHARACTERISTICS IDD NOTES: 2. Temperature Ranges as follows: J, K versions: 0oC to 70oC TA = 25oC for TYP Specifications. MIN and MAX are measured over the specified operating range. 3. This includes the effect of 5ppm maximum gain TC. 4. Parameter not tested. Parameter guaranteed by design, simulation, or characterization. 5. DB0 - DB11 = 0V to VDD or VDD to 0V. 6. Logic inputs are MOS gates. Typical input current (25oC) is less than 1nA. 7. Typical values are not guaranteed but reflect mean performance specification. Specifications subject to change without notice. Timing Diagrams tCH CHIP SELECT tCH VDD tCS CHIP SELECT VDD tCS 0 WRITE tWR VDD tDH tDS DATA IN (DB0 - DB11) 0 FIGURE 1A. TYPICAL WRITE CYCLE WRITE VDD tDH tDS DATA IN (DB0 - DB11) DATA VALID FIGURE 1B. PREFERRED WRITE CYCLE FIGURE 1. WRITE CYCLE TIMING DIAGRAM 3 tWR 0 VDD DATA VALID 0 0 VDD 0 AD7545 Circuit Information - Digital Section MODE SELECTION HOLD MODE: WRITE MODE: CS and WR low, DAC responds Either CS or WR high, data bus to data bus (DB0 - DB11) inputs (DB0 - DB11) is locked out; DAC holds last data present when WR or CS assumed high state. Figure 4 shows the digital structure for one bit. The digital signals CONTROL and CONTROL are generated from CS and WR. TO AGND SWITCH NOTES: 8. VDD = +5V; tr = tf = 20ns. TO OUT1 SWITCH 9. VDD = +15V; tr = tf = 40ns. 10. All input signal rise and fall times measured from 10% to 90% of VDD . INPUTS BUFFERS 11. Timing measurement reference level is (VIH + VIL)/2. CONTROL 12. Since input data latches are transparent for CS and WR both low, it is preferred to have data valid before CS and WR both go low. This prevents undesirable changes at the analog output while the data inputs settle. Circuit Information - D/A Converter Section Figure 2 shows a simplified circuit of the D/A converter section of the AD7545. Note that the ladder termination resistor is connected to AGND. R is typically 11kΩ. The binary weighted currents are switched between the OUT1 bus line and AGND by N-Channel switches, thus maintaining a constant current in each ladder leg independent of the switch state. One of the current switches is shown in Figure 3. VREF R 2R R 2R R R 2R 2R 2R AGND DB9 DB1 DB0 (LSB) FIGURE 2. SIMPLIFIED D/A CIRCUIT OF AD7545 TO LADDER FROM INTERFACE LOGIC AGND OUT1 FIGURE 3. N-CHANNEL CURRENT STEERING SWITCH The capacitance at the OUT1 bus line, COUT1, is code dependent and varies from 70pF (all switches to AGND) to 200pF (all switches to OUT1). The input resistance at VREF (Figure 2) is always equal to RLDR (RLDR is the R/2R ladder characteristic resistance and is equal to the value “R”). Since RIN at the VREF pin is constant, the reference terminal can be driven by a reference voltage or a reference current, AC or DC, of positive or negative polarity. (If a current source is used, a low temperature coefficient external RFB is recommended to define scale factor). 4 The input buffers are simple CMOS inverters designed such that when the AD7545 is operated with VDD = 5V, the buffers convert TTL input levels (2.4V and 0.8V) into CMOS logic levels. When VIN is in the region of 2.0V to 3.5V the input buffers operate in their linear region and draw current from the power supply. To minimize power supply currents it is recommended that the digital input voltages be as close to the supply rails (V DD and DGND) as is practically possible. The AD7545 may be operated with any supply voltage in the range 5V ≤ VDD ≤ 15V. With V DD = +15V the input logic levels are CMOS compatible only, i.e., 1.5V and 13.5V. Output Offset 2R OUT1 DB10 FIGURE 4. DIGITAL INPUT STRUCTURE Application RFB DB11 (MSB) CONTROL CMOS current-steering D/A converters exhibit a code dependent output resistance which in turn causes a code dependent amplifier noise gain. The effect is a code dependent differential nonlinearity term at the amplifier output which depends on VOS where VOS is the amplifier input offset voltage. To maintain monotonic operation it is recommended that V OS be no greater than (25 x 10-6) (VREF) over the temperature range of operation. General Ground Management AC or transient voltages between AGND and DGND can cause noise injection into the analog output. The simplest method of ensuring that voltages at AGND and DGND are equal is to tie AGND and DGND together at the AD7545. In more complex systems where the AGND and DGND connection is on the backplane, it is recommended that two diodes be connected in inverse parallel between the AD7545 AGND and DGND pins (1N914 or equivalent). Digital Glitches When WR and CS are both low the latched are transparent and the D/A converter inputs follow the data inputs. In some bus systems, data on the data bus is not always valid for the whole period during which WR is low and as a result invalid data can briefly occur at the D/A converter inputs during a write cycle. Such invalid data can cause unwanted glitches at the output of the D/A converter. The solution to this AD7545 problem, if it occurs, is to retime the write pulse (WR) so that it only occurs when data is valid. Another cause of digital glitches is capacitive coupling from the digital lines to the OUT1 and AGND terminals. This should be minimized by isolating the analog pins of the AD7545 (pins 1, 2, 19, 20) from the digital pins by a ground track run between pins 2 and 3 and between pins 18 and 19 of the AD7545. Note how the analog pins are at one end of the package and separated from the digital pins by VDD and DGND to aid isolation at the board level. On-chip capacitive coupling can also give rise to crosstalk from the digital to analog sections of the AD7545, particularly in circuits with high currents and fast rise and fall times. This type of crosstalk is minimized by using VDD = +5V. However, great care should be taken to ensure that the +5V used to power the AD7545 is free from digitally induced noise. Temperature Coefficients The gain temperature coefficient of the AD7545 has a maximum value of 5ppm/oC and a typical value of 2ppm/oC. This corresponds to worst case gain shifts of 2 LSBs and 0.8 LSBs respectively over a 100oC temperature range. When trim resistors R1 and R2 are used to adjust full scale range, the temperature coefficient of R1 and R2 should also be taken into account. operational amplifiers which are good candidates for many applications. The main selection criteria for these operational amplifiers is to have low V OS , low VOS drift, low bias current and low settling time. These amplifiers need to maintain the low nonlinearity and monotonic operation of the D/A while providing enough speed for maximum converter performance. Operational Amplifiers HA-5127 HA-5137 HA-5147 HA-5170 Ultra Low Noise, Precision Ultra Low Noise, Precision, Wide Band Ultra Low Noise, Precision, High Slew Rate Precision, JFET Input TABLE 1. RECOMMENDED TRIM RESISTOR VALUES vs GRADES FOR VDD = +5V TRIM RESISTOR J K R1 500Ω 200Ω R2 150Ω 68Ω TABLE 2. UNIPOLAR BINARY CODE TABLE FOR CIRCUIT OF FIGURE 5 BINARY NUMBER IN DAC REGISTER ANALOG OUTPUT Basic Applications Figures 5 and 6 show simple unipolar and bipolar circuits using the AD7545. Resistor R1 is used to trim for full scale. Capacitor C1 provides phase compensation and helps prevent overshoot and ringing when using high speed op amps. Note that the circuits of Figures 5 and 6 have constant input impedance at the VREF terminal. The circuit of Figure 5 can either be used as a fixed reference D/A converter so that it provides an analog output voltage in the range 0V to -VIN (note the inversion introduced by the op amp) or VIN can be an AC signal in which case the circuit behaves as an attenuator (2-Quadrant Multiplier). VIN can be any voltage in the range -20V ≤ VIN ≤ +20V (provided the op amp can handle such voltages) since VREF is permitted to exceed VDD . Table 2 shows the code relationship for the circuit of Figure 5. Figure 6 and Table 3 illustrate the recommended circuit and code relationship for bipolar operation. The D/A function itself uses offset binary code and inverter U1 on the MSB line converts 2’s complement input code to offset binary code. If appropriate, inversion of the MSB may be done in software using an exclusive -OR instruction and the inverter omitted. R3, R4 and R5 must be selected to match within 0.01% and they should be the same type of resistor (preferably wire-wound or metal foil), so that their temperature coefficients match. Mismatch of R3 value to R4 causes both offset and full scale error. Mismatch of R5 to R4 and R3 causes full scale error. The choice of the operational amplifiers in Figure 5 and Figure 6 depends on the application and the trade off between required precision and speed. Below is a list of 5  4095  ------------IN  4096    1111 1111 1111 –V 1000 0000 0000  2048  1 – V IN  -------------  = – --- VIN 2 4096   0000 0000 0001  1  – V IN  -------------   4096  0000 0000 0000 0V TABLE 3. 2’S COMPLEMENT CODE TABLE FOR CIRCUIT OF FIGURE 6 DATA INPUT ANALOG OUTPUT  2047  • ------------IN  2048    0111 1111 1111 +V 0000 0000 0001  1  +V IN •  -------------   2048  0000 0000 0000 1111 1111 1111 –V 1000 0000 0000  2048  – V IN •  -------------   2048  0V  1  • ------------IN  2048    AD7545 VDD VIN R2 (NOTE) 18 20 VDD RFB 19 VREF C1 33pF OUT 1 AD7545 16 VOUT + 2 DGND 17 - AGND R1 (NOTE) WR 1 3 ANALOG COMMON CS DB11 - DB0 (PINS 4 - 15) NOTE: REFER TO TABLE 1 FIGURE 5. UNIPOLAR BINARY OPERATION VDD VIN 18 20 VDD RFB 19 VREF R1 (NOTE) WR DB11 17 16 R2 (NOTE) R4 20K C1 33pF OUT 1 AD7545 R3 10K 1 A1 AGND 2 4 R6 5K DB10 - DB0 R5 20K A2 + 3 DGND CS 11 U1 (SEE TEXT) 12 ANALOG COMMON NOTE: FOR VALUES OF R1 AND R2 SEE TABLE 1 DATA INPUT FIGURE 6. BIPOLAR OPERATION (2’S COMPLEMENT CODE) 6 VOUT AD7545 Die Characteristics DIE DIMENSIONS PASSIVATION 121 mils x 123 mils (3073µm x 3124µm) Type: PSG/Nitride PSG: 7 ±1.4kÅ Nitride: 8 ±1.2kÅ METALLIZATION Type: Pure Aluminum Thickness: 10 ±1kÅ PROCESS CMOS Metal Gate Metallization Mask Layout AD7545 PIN 7 DB8 PIN 6 DB9 PIN 4 DB11 (MSB) PIN 5 DB10 PIN 3 DGND PIN 2 AGND PIN 1 OUT1 PIN 8 DB7 PIN 9 DB6 PIN 10 DB5 PIN 11 DB4 PIN 20 RFEEDBACK PIN 19 VREF PIN 12 DB3 PIN 13 DB2 PIN 18 VDD PIN 14 DB1 7 PIN 15 DB0 (LSB) PIN 16 CS PIN 17 WR AD7545 Dual-In-Line Plastic Packages (PDIP) E20.3 (JEDEC MS-001-AD ISSUE D) 20 LEAD DUAL-IN-LINE PLASTIC PACKAGE N E1 INDEX AREA 1 2 3 INCHES N/2 -B- -AE D BASE PLANE -C- A2 SEATING PLANE A L D1 e B1 D1 A1 eC B 0.010 (0.25) M C A B S MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A - 0.210 - 5.33 4 A1 0.015 - 0.39 - 4 A2 0.115 0.195 2.93 4.95 - B 0.014 0.022 0.356 0.558 - C L B1 0.045 0.070 1.55 1.77 8 eA C 0.008 0.014 C D 0.980 1.060 eB D1 0.005 - E 0.300 0.325 E1 0.240 0.280 NOTES: e 0.204 eA 0.300 BSC 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. eB - 3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication No. 95. L 0.115 N 20 - 26.9 5 0.13 - 5 7.62 8.25 6 6.10 7.11 5 0.100 BSC 1. Controlling Dimensions: INCH. In case of conflict between English and Metric dimensions, the inch dimensions control. 0.355 24.89 2.54 BSC - 7.62 BSC 0.430 - 0.150 2.93 6 10.92 7 3.81 4 20 4. Dimensions A, A1 and L are measured with the package seated in JEDEC seating plane gauge GS-3. 9 Rev. 0 12/93 5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 inch (0.25mm). 6. E and eA are measured with the leads constrained to be perpendicular to datum -C- . 7. eB and eC are measured at the lead tips with the leads unconstrained. eC must be zero or greater. 8. B1 maximum dimensions do not include dambar protrusions. Dambar protrusions shall not exceed 0.010 inch (0.25mm). 9. N is the maximum number of terminal positions. 10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm). All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at website www.intersil.com/design/quality/iso.asp. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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