CA3039M96

® December 2000 Features CT T O DU M EN E PR PLACE ter at T OLE RE c t Cen OB S E N D E D ppor il.com/ts M Su COM chnical w.inters E NO R our Te or ww act ERSIL cont -INT 8 1-88 CA3039 Diode Array Description The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit construction assures excellent static and dynamic matching of the diodes, making the array extremely useful for a wide variety of applications in communication and switching systems. Five of the diodes are independently accessible, the sixth shares a common terminal with the substrate. For applications such as balanced modulators or ring modulators where capacitive balance is important, the substrate should be returned to a DC potential which is significantly more negative (with respect to the active diodes) than the peak signal applied. • Six Matched Diodes on a Common Substrate • Excellent Reverse Recovery Time . . . . . . . . . 1ns (Typ) • VF Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV (Max) • Low Capacitance . . . . . CD = 0.65pF (Typ) at VR = -2V Applications • Ultra-Fast Low Capacitance Matched Diodes for Applications in Communications and Switching Systems • Balanced Modulators or Demodulators • Ring Modulators • High Speed Diode Gates • Analog Switches Part Number Information PART NUMBER CA3039 CA3039M CA3039M96 TEMP. RANGE ( oC) -55 to 125 -55 to 125 -55 to 125 PACKAGE 12 Pin Metal Can 14 Ld SOIC 14 Ld SOIC Tape and Reel PKG. NO. T12.B M14.15 M14.15 Pinouts CA3039 (SOIC) TOP VIEW CA3039 (METAL CAN) TOP VIEW 1 2 3 4 5 NC 6 7 D3 D2 D1 D4 D5 14 13 SUBSTRATE 12 3 11 10 9 NC 8 4 2 12 1 D5 D4 D3 D2 5 6 D6 D1 DS 8 7 11 10 9 DS D 6 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved 1 File Number 343.4 CA3039 Absolute Maximum Ratings Inverse Voltage (PIV) for: D 1 - D5 . . . . . . . . . . . . . . . . . . . . . . . . 5V D 6 . . . . . . . . . . . . . . . . . . . . . . . 0.5V Diode-to-Substrate Voltage (VDI) for D1 - D5 . . . . . . . . . . . 20V, -1V (Terminal 1, 4, 5, 8 or 12 to Terminal 10) DC Forward Current (IF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Recurrent Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . 100mA Forward Surge Current (IF(SURGE)) . . . . . . . . . . . . . . . . . . . 100mA Thermal Information Thermal Resistance (Typical, Note 1) θJA ( oC/W) θJC (oC/W) Metal Can Package . . . . . . . . . . . . . . . 200 120 SOIC Package. . . . . . . . . . . . . . . . . . . 220 N/A Maximum Power Dissipation (Any One Diode) . . . . . . . . . . . 100mW Maximum Junction Temperature (Metal Can Package) . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications PARAMETER TA = 25oC; Characteristics apply for each diode unit, Unless Otherwise Specified SYMBOL VF TEST CONDITIONS IF = 50µA IF = 1mA IF = 3mA IF = 10mA MIN 5 20 TYP 0.65 0.73 0.76 0.81 7 MAX 0.69 0.78 0.80 0.90 UNITS V V V V V V DC Forward Voltage Drop (Figure 1) DC Reverse Breakdown Voltage DC Reverse Breakdown Voltage Between Any Diode Unit and Substrate DC Reverse (Leakage) Current (Figure 2) DC Reverse (Leakage) Current Between Any Diode Unit and Substrate (Figure 3) Magnitude of Diode Offset Voltage (Note 2) (Figure 1) Temperature Coefficient of |VF1 - VF2| (Figure 4) V(BR)R V(BR)R IR IR VF1 – VF2 IR = -10µA IR = -10µA VR = -4V VR = -10V IF = 1mA IF = 1mA - 0.016 0.022 100 100 nA nA - 0.5 5.0 mV µ V/oC ∆ V F1 – V F2 --------------------------------∆T ∆ VF ---------∆T VF tRR RD CD CDI - 1.0 - Temperature Coefficient of Forward Drop (Figure 5) IF = 1mA - -1.9 - mV/oC DC Forward Voltage Drop for Anode-toSubstrate Diode (DS) Reverse Recovery Time Diode Resistance (Figure 6) Diode Capacitance (Figure 7) Diode-to-Substrate Capacitance (Figure 8) NOTE: IF = 1mA IF = 10mA, IR = - 10mA f = 1kHz, IF = 1mA VR = -2V, IF = 0 VDI = 4V, IF = 0 - 0.65 - V 25 - 1.0 30 0.65 3.2 45 - ns Ω pF pF 2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units. 2 CA3039 Typical Performance Curves TA = 2 5oC 0.8 DC FORWARD VOLTAGE (V) 6 DIODE OFFSET VOLTAGE (mV) DC REVERSE CURRENT (nA) 5 4 3 0.6 DIODE OFFSET ( VF1 – V F2 ) 0.5 0.01 2 1 0 1 10 VR = -4V FORWARD VOLTAGE DROP (VF) 0.7 0.1 0.01 0.1 1 DC FORWARD CURRENT (mA) 10 0.001 -75 -50 -25 0 25 50 75 100 125 TEMPERATURE (oC) FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND DIODE OFFSET VOLTAGE vs DC FORWARD CURRENT FIGURE 2. DC REVERSE (LEAKAGE) CURRENT (D1 - D5) vs TEMPERATURE 100 DIODE OFFSET VOLTAGE ( V F1 – V F2 ) (mV) VR = -10V 4 IF = 10mA 3 2 0.7 0.6 IF = 1mA 0.5 0.4 0.3 -75 IF = 0.1mA DC REVERSE CURRENT (nA) 10 1 0.1 0.01 0.001 -75 -50 -25 0 25 50 TEMPERATURE (oC) 75 100 125 -50 -25 0 25 50 TEMPERATURE (oC) 75 100 125 FIGURE 3. DC REVERSE (LEAKAGE) CURRENT BETWEEN D1, D2, D3, D4, D5 AND SUBSTRATE vs TEMPERATURE FIGURE 4. DIODE OFFSET VOLTAGE (ANY DIODE) vs TEMPERATURE 3 CA3039 Typical Performance Curves IF = 1mA 0.9 DC FORWARD VOLTAGE (V) DIODE RESISTANCE (Ω) (Continued) 1000 TA = 25o C f = 1kHz 0.8 100 0.7 0.6 10 0.5 1 0.01 0.4 -75 -50 -25 0 25 50 75 100 125 TEMPERATURE (oC) 0.1 1 10 DC FORWARD CURRENT (mA) FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs TEMPERATURE FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC FORWARD CURRENT DIODE TO SUBSTRATE CAPACITANCE (pF) 6 DIODE CAPACITANCE (pF) TA = 25oC IF = 0 6 5 4 3 2 1 0 0 5 TA = 25oC IF = 0 4 3 2 1 1 2 3 4 0 1 2 3 4 DC REVERSE VOLTAGE ACROSS DIODE (V) DC REVERSE VOLTAGE BETWEEN TERMINALS 1, 4, 5, 8, OR 12 AND SUBSTRATE (TERMINAL 10) (V) FIGURE 7. DIODE CAPACITANCE (D1 - D5) vs REVERSE VOLTAGE FIGURE 8. DIODE-TO-SUBSTRATE CAPACITANCE vs REVERSE VOLTAGE 4