CA3086M96

CA3086 November 1996 General Purpose NPN Transistor Array Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide variety of applications in low-power systems at frequencies from DC to 120MHz. They may be used as discrete transistors in conventional circuits. However, they also provide the very significant inherent advantages unique to integrated circuits, such as compactness, ease of physical handling and thermal matching Applications • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz • General-Purpose Use in Signal Processing Systems Operating in the DC to 190MHz Range • Temperature Compensated Amplifiers • See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array” for Suggested Applications Ordering Information PART NUMBER (BRAND) CA3086 CA3086M (3086) CA3086M96 (3086) CA3086F TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 -55 to 125 PACKAGE 14 Ld PDIP 14 Ld SOIC 14 Ld SOIC Tape and Reel 14 Ld CERDIP PKG. NO. E14.3 M14.15 M14.15 F14.3 Pinout CA3086 (PDIP, CERDIP, SOIC) TOP VIEW 1 Q5 2 3 Q2 4 Q4 5 6 7 Q3 Q1 14 13 SUBSTRATE 12 11 10 9 8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 483.3 5-27 CA3086 Absolute Maximum Ratings The following ratings apply for each transistor in the device: Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . 20V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Thermal Information Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) CERDIP Package . . . . . . . . . . . . . . . . 150 75 PDIP Package . . . . . . . . . . . . . . . . . . . 180 N/A SOIC Package . . . . . . . . . . . . . . . . . . . 220 N/A Maximum Power Dissipation (Any one transistor). . . . . . . . . 300mW Maximum Junction Temperature (Hermetic Packages) . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. To avoid undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications PARAMETER TA = 25oC, For Equipment Design SYMBOL V(BR)CBO V(BR)CEO V(BR)ClO V(BR)EBO ICBO ICEO hFE TEST CONDITIONS lC = 10µA, IE = 0 IC = 1mA, IB = 0 IC = 10µA, ICI = 0 IE = 10µA, IC = 0 VCB = 10V, IE = 0, VCE = 10V, IB = 0, VCE = 3V, IC = 1mA MIN 20 15 20 5 40 TYP 60 24 60 7 0.002 (Figure 2) 100 MAX 100 5 UNITS V V V V nA µA Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-Cutoff Current (Figure 1) Collector-Cutoff Current (Figure 2) DC Forward-Current Transfer Ratio (Figure 3) Electrical Specifications PARAMETER TA = 25oC, Typical Values Intended Only for Design Guidance TYPICAL VALUES 100 54 0.715 0.800 -1.9 0.23 V V mV/oC V SYMBOL hFE VCE = 3V TEST CONDITIONS IC = 10mA IC = 10µA UNITS DC Forward-Current Transfer Ratio (Figure 3) Base-to-Emitter Voltage (Figure 4) VBE VCE = 3V IE = 1 mA IE = 10mA VBE Temperature Coefficient (Figure 5) Collector-to-Emitter Saturation Voltage Noise Figure (Low Frequency) ∆VBE/∆T VCE SAT NF VCE = 3V, lC = 1 mA IB = 1mA, IC = 10mA f = 1kHz, VCE = 3V, IC = 100µA, RS = 1kΩ 3.25 dB 5-28 CA3086 Electrical Specifications PARAMETER Low-Frequency, Small-Signal EquivalentCircuit Characteristics: Forward Current-Transfer Ratio (Figure 6) Short-Circuit Input Impedance (Figure 6) Open-Circuit Output Impedance (Figure 6) Open-Circuit Reverse-Voltage Transfer Ratio (Figure 6) Admittance Characteristics: Forward Transfer Admittance (Figure 7) Input Admittance (Figure 8) Output Admittance (Figure 9) Reverse Transfer Admittance (Figure 10) Gain-Bandwidth Product (Figure 11) Emitter-to-Base Capacitance Collector-to-Base Capacitance Collector-to-Substrate Capacitance yFE yIE yOE yRE fT CEBO CCBO CClO VCE = 3V, IC = 3mA VEB = 3V, IE = 0 VCB = 3V, IC = 0 VC l = 3V, IC = 0 hFE hIE hOE hRE f = 1MHz,VCE = 3V, lC = 1mA 31 - j1.5 mS TA = 25oC, Typical Values Intended Only for Design Guidance (Continued) TYPICAL VALUES SYMBOL TEST CONDITIONS f = 1kHz,VCE = 3V, IC = 1mA UNITS 100 kΩ µS - 3.5 15.6 1.8 X 10-4 0.3 + j0.04 0.001 + j0.03 See Figure 10 mS mS - 550 0.6 0.58 2.8 MHz pF pF pF Typical Performance Curves 102 COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA) IE = 0 10 VCB = 15V VCB = 10V VCB = 5V 103 102 VCE = 10V 10 VCE = 5V 1 10-1 10-2 10-3 0 25 50 75 100 125 0 25 TEMPERATURE (oC) 50 75 TEMPERATURE (oC) 100 125 IB = 0 1 10-1 10-2 10-3 10-4 FIGURE 1. ICBO vs TEMPERATURE FIGURE 2. ICEO vs TEMPERATURE 5-29 CA3086 Typical Performance Curves 120 110 100 90 80 70 60 50 0.01 0.1 1 10 EMITTER CURRENT (mA) BASE-TO-EMITTER VOLTAGE (V) VCE = 3V TA = 25oC hFE (Continued) 0.8 VCE = 3V TA = 25oC STATIC FORWARD CURRENT TRANSFER RATIO (hFE) 0.7 VBE 0.6 0.5 0.4 0.01 0.1 1.0 EMITTER CURRENT (mA) 10 FIGURE 3. hFE vs IE FIGURE 4. VBE vs IE VCB = 3V NORMALIZED h PARAMETERS 100 VCE = 3V f = 1kHz TA = 25oC hIE BASE-TO-EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 -75 -50 -25 0 25 50 75 100 125 TEMPERATURE (oC) IE = 3mA IE = 1mA IE = 0.5mA 10 hFE = 100 hIE = 3.5kΩ hRE = 1.88 x 10-4 hOE = 15.6µS hOE AT 1mA hRE 1.0 hFE hRE hIE 0.1 0.01 0.1 1.0 COLLECTOR CURRENT (mA) 10 FIGURE 5. VBE vs TEMPERATURE FIGURE 6. NORMALIZED hFE, hIE, hRE, hOE vs IC FORWARD TRANSFER CONDUCTANCE (gFE) AND SUSCEPTANCE (bFE) (mS) INPUT CONDUCTANCE (gIE) AND SUSCEPTANCE (bIE) (mS) 40 30 20 10 0 -10 -20 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA 6 5 4 3 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA gFE bIE 2 gIE 1 0 bFE 0.1 1 10 FREQUENCY (MHz) 100 0.1 1 10 FREQUENCY (MHz) 100 FIGURE 7. yFE vs FREQUENCY FIGURE 8. yIE vs FREQUENCY 5-30 CA3086 Typical Performance Curves (Continued) 6 OUTPUT CONDUCTANCE (gOE) AND SUSCEPTANCE (bOE) (mS) 5 4 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA REVERSE TRANSFER CONDUCTANCE (gRE) AND SUSCEPTANCE (bRE) (mS) COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA gRE IS SMALL AT FREQUENCIES LESS THAN 500MHz bRE 0 bOE 3 2 1 0 0.1 1 10 FREQUENCY (MHz) 100 -0.5 -1.0 -1.5 -2.0 1 10 FREQUENCY (MHz) 100 gOE FIGURE 9. yOE vs FREQUENCY FIGURE 10. yRE vs FREQUENCY VCE = 3V GAIN BANDWIDTH PRODUCT (MHz) 1000 900 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR CURRENT (mA) TA = 25oC FIGURE 11. fT vs IC All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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