CA3127M96

CA3127 August 1996 High Frequency NPN Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. Features • Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz • Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz • Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz • Five Independent Transistors on a Common Substrate Applications • VHF Amplifiers • Multifunction Combinations - RF/Mixer/Oscillator • Sense Amplifiers • Synchronous Detectors • VHF Mixers Ordering Information PART NUMBER (BRAND) CA3127E TEMP. RANGE (oC) -55 to 125 -55 to 125 PKG. NO. E16.3 M16.15 PACKAGE 16 Ld PDIP 16 Ld SOIC • IF Converter • IF Amplifiers • Synthesizers • Cascade Amplifiers CA3127M (3127) CA3127M96 (3127) -55 to 125 16 Ld SOIC Tape and Reel M16.15 Pinout CA3127 (PDIP, SOIC) TOP VIEW 1 2 Q2 3 4 Q1 16 15 14 13 Q5 12 11 SUBSTRATE 5 6 Q3 7 8 Q4 10 9 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 662.3 5-1 CA3127 Absolute Maximum Ratings The following ratings apply for each transistor in the device Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . 20V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Thermal Information Thermal Resistance (Typical, Note 2) θJA (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 Maximum Power Dissipation, PD (Any One Transistor). . . . . . 85mW Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175oC Maximum Junction Temperature (Plastic Packages). . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications PARAMETER TA = 25oC TEST CONDITIONS IC = 10µA, IE = 0 IC = 1mA, IB = 0 IC1 = 10µA, IB = 0, IE = 0 IE = 10µA, IC = 0 VCE = 10V IB = 0 VCB = 10V, IE = 0 VCE = 6V IC = 5mA IC = 1mA IC = 0.1mA MIN TYP MAX UNITS DC CHARACTERISTICS (For Each Transistor) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Substrate Breakdown-Voltage Emitter-to-Base Breakdown Voltage (Note 3) Collector-Cutoff-Current Collector-Cutoff-Current DC Forward-Current Transfer Ratio 20 15 20 4 35 40 35 0.71 0.66 0.60 32 24 60 5.7 88 90 85 0.81 0.76 0.70 0.26 0.5 0.2 0.5 40 0.91 0.86 0.80 0.50 5 3 V V V V mV µA dB GHz pF pF pF dB dB dB Ω kΩ pF pF mS V V V V µA nA Base-to-Emitter Voltage VCE = 6V IC = 5mA IC = 1mA IC = 0.1mA Collector-to-Emitter Saturation Voltage Magnitude of Difference in VBE Magnitude of Difference in IB DYNAMIC CHARACTERISTICS Noise Figure Gain-Bandwidth Product Collector-to-Base Capacitance Collector-to-Substrate Capacitance Emitter-to-Base Capacitance Voltage Gain Power Gain Noise Figure Input Resistance Output Resistance Input Capacitance Output Capacitance Magnitude of Forward Transadmittance NOTE: IC = 10mA, IB = 1mA Q1 and Q2 Matched VCE = 6V, IC = 1mA f = 100kHz, RS = 500Ω, IC = 1mA VCE = 6V, IC = 5mA VCB = 6V, f = 1MHz VCI = 6V, f = 1MHz VBE = 4V, f = 1MHz VCE = 6V, f = 10MHz, RL = 1kΩ, IC = 1mA Cascode Configuration f = 100MHz, V+ = 12V, IC = 1mA Common-Emitter Configuration VCE = 6V, IC = 1mA, f = 200 MHz 27 - 2.2 1.15 See Fig. 5 - 28 30 3.5 400 4.6 3.7 2 24 - 3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA. 5-2 CA3127 Test Circuits V+ 10kΩ BIAS-CURRENT ADJ 470 pF RL 0.01 µF 1µF 51Ω 6 0.01µF 8 1µF 0.01 µF 470pF 7 VI GEN Q3 470pF 4 2 Q2 3 VO FIGURE 1. VOLTAGE-GAIN TEST CIRCUIT USING CURRENT-MIRROR BIASING FOR Q2 1.5 - 8pF VO 12 SHIELD Q5 2 VI 1000pF 0.3µH 4 1.8pF C1 (NOTE 5) 3 Q2 560Ω 750Ω 1% 1000 pF 6 8 1000 pF 7 Q3 5 25kΩ +12V 13 620Ω 14 1000 pF 1000 pF TEST POINT C2 (NOTE 5) 8.2 kΩ 0.47µH NOTES: 4. This circuit was chosen because it conveniently represents a close approximation in performance to a properly unilateralized single transistor of this type. The use of Q3 in a current-mirror configuration facilitates simplified biasing. The use of the cascode circuit in no way implies that the transistors cannot be used individually. 5. E.F. Johnson number 160-104-1 or equivalent. OHMITE Z144 FIGURE 2. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT GENERAL RADIO 1021-P1 100MHz GENERATOR ATTN 100MHz TEST SET BOONTON 91C RF VOLTMETER 12VDC POWER SUPPLY FIGURE 3A. POWER GAIN SET-UP VHF NOISE SOURCE HEWLETT PACKARD HP343A 100MHz TEST SET 100MHz POST AMPLIFIER NOISE FIGURE METER HEWLETT PACKARD HP342A 12VDC POWER SUPPLY 15VDC POWER SUPPLY FIGURE 3B. NOISE FIGURE SET-UP FIGURE 3. BLOCK DIAGRAMS OF POWER-GAIN AND NOISE-FIGURE TEST SET-UPS 5-3 CA3127 Typical Performance Curves TA = 25oC VCE = 6V RSOURCE = 500Ω f = 10Hz 30 TA = 25oC VCE = 6V RSOURCE = 1kΩ f = 10Hz f = 100Hz 30 NOISE FIGURE (dB) 20 NOISE FIGURE (dB) f = 100Hz 20 f = 10kHz 10 f = 1kHz f = 1kHz 10 f = 10kHz f = 100kHz f = 100kHz 0 0.01 0.1 1.0 COLLECTOR CURRENT (mA) 0 0.01 0.1 1.0 COLLECTOR CURRENT (mA) FIGURE 4. NOISE FIGURE vs COLLECTOR CURRENT FIGURE 5. NOISE FIGURE vs COLLECTOR CURRENT BASE-TO-EMITTER VOLTAGE (V) TA = 25oC VCE = 6V GAIN-BANDWIDTH PRODUCT (GHz) 1.0 TA = -55oC 0.9 0.8 0.7 TA = 125oC 0.6 TA = 25oC 1.2 1.1 1.0 0.9 0.8 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR CURRENT (mA) 0.5 0.4 0.1 1 COLLECTOR CURRENT (mA) 10 FIGURE 6. GAIN-BANDWIDTH PRODUCT vs COLLECTOR CURRENT FIGURE 7. BASE-TO-EMITTER VOLTAGE vs COLLECTOR CURRENT TA = 25oC f = 1MHz 2.25 2.00 CAPACITANCE (pF) 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 1 2 3 4 5 CEB CCB 6 7 8 9 10 CCI CAPACITANCE (pF) TRANSISTOR CCB CCE CEB CCI PKG TOTAL PKG TOTAL PKG TOTAL PKG TOTAL BIAS (V) Q1 Q2 Q3 Q4 Q5 BIAS VOLTAGE (V) - 6V - 6V - 4V - 6V 0.025 0.190 0.090 0.125 0.365 0.610 0.475 1.65 0.015 0.170 0.225 0.265 0.130 0.360 0.085 1.35 0.040 0.200 0.215 0.240 0.360 0.625 0.210 1.40 0.040 0.190 0.225 0.270 0.365 0.610 0.085 1.25 0.010 0.165 0.095 0.115 0.140 0.365 0.090 1.35 FIGURE 8A. CAPACITANCE vs BIAS VOLTAGE FOR Q2 FIGURE 8B. TYPICAL CAPACITANCE VALUES AT f = 1MHz. THREE TERMINAL MEASUREMENT. GUARD ALL TERMINALS EXCEPT THOSE UNDER TEST. 5-4 CA3127 Typical Performance Curves 40 35 30 VOLTAGE GAIN (dB) 25 20 15 10 5 0 -5 -10 1 10 100 FREQUENCY (MHz) 1000 IC = 0.2mA IC = 1mA IC = 0.5mA VOLTAGE GAIN (dB) IC = 5mA TA = 25oC, VCE = 6V, RL = 100Ω FOR TEST CIRCUIT SEE FIGURE 19 (Continued) 40 35 30 25 20 15 10 5 0 -5 -10 1 TA = 25oC, VCE = 6V, RL = 1kΩ FOR TEST CIRCUIT SEE FIGURE 19 10 100 FREQUENCY (MHz) 1000 IC = 1mA IC = 0.5mA IC = 0.2mA IC = 5mA FIGURE 9. VOLTAGE GAIN vs FREQUENCY FIGURE 10. VOLTAGE GAIN vs FREQUENCY DC FORWARD CURRENT TRANSFER RATIO 100 90 TA = 25oC VCE = 6V INPUT CONDUCTANCE (g11) OR SUSCEPTANCE (b11) (mS) TA = 25oC, VCE = 6V, IC = 1mA 8 7 6 5 4 3 2 1 0 100 FREQUENCY (MHz) g11 b11 80 70 60 50 40 0.1 1.0 COLLECTOR CURRENT (mA) 10 1000 FIGURE 11. DC FORWARD-CURRENT TRANSFER RATIO (hFE) vs COLLECTOR CURRENT FIGURE 12. INPUT ADMITTANCE (Y11) vs FREQUENCY OUTPUT CONDUCTANCE (g22) (mS) TA = 25oC VCE = 6V f = 200MHz INPUT CONDUCTANCE (g11) OR 9 SUSCEPTANCE (b11) (mS) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 COLLECTOR CURRENT (mA) 9 10 b11 g11 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 100 b22 8 7 6 5 4 3 g22 2 1 0 1000 FREQUENCY (MHz) FIGURE 13. INPUT ADMITTANCE (Y11) vs COLLECTOR CURRENT FIGURE 14. OUTPUT ADMITTANCE (Y22) vs FREQUENCY 5-5 OUTPUT SUSCEPTANCE (b22) (mS) TA = 25oC VCE = 6V IC = 1mA CA3127 Typical Performance Curves TA = 25oC VCE = 6V f = 200MHz 0.400 0.375 0.350 0.325 0.300 0.275 0.250 0.225 0.200 0.175 0 1 2 g22 (Continued) TA = 25oC MAGNITUDE OF FORWARD TRANSADMITTANCE (|Y21|) (mS) 100 80 |Y21| b22 VCE = 6V f = 200MHz 0 PHASE-ANGLE OF FORWARD TRANSADMITTANCE (|θ21|) (DEGREES) PHASE-ANGLE OF REVERSE TRANSADMITTANCE (|θ12|) (DEGREES) OUTPUT CONDUCTANCE (g22) (mS) 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 OUTPUT SUSCEPTANCE (b22) (mS) -20 60 40 -40 θ21 -60 20 -80 1.9 3 4 5 6 7 8 9 10 11 12 COLLECTOR CURRENT (mA) 0 1 2 -100 3 4 5 6 7 8 9 10 11 12 COLLECTOR CURRENT (mA) FIGURE 15. OUTPUT ADMITTANCE (Y22) vs COLLECTOR CURRENT FIGURE 16. FORWARD TRANSADMITTANCE (Y21) vs COLLECTOR CURRENT TA = 25oC VCE = 6V IC = 1mA MAGNITUDE OF FORWARD TRANSADMITTANCE (|Y21|) (mS) PHASE-ANGLE OF FORWARD TRANSADMITTANCE (|θ21|) (DEGREES) -10 -20 -30 -40 θ21 -50 -60 MAGNITUDE OF REVERSE TRANSADMITTANCE (|Y12|) (mS) TA = 25oC VCE = 6V f = 200MHz θ12 -80 -90 -100 -110 -120 -130 -140 30 20 10 0 100 150 |Y21| -70 -80 -90 |Y12| 0.21 200 FREQUENCY (MHz) -100 1000 0 1 2 -150 3 4 5 6 7 8 9 10 11 12 COLLECTOR CURRENT (mA) FIGURE 17. FORWARD TRANSADMITTANCE (Y21) vs FREQUENCY FIGURE 18. REVERSE TRANSADMITTANCE (Y12) vs COLLECTOR CURRENT MAGNITUDE OF REVERSE TRANSADMITTANCE (|Y12|) (mS) 0.6 0.5 0.4 0.3 0.2 0.1 0 100 |Y12| θ12 -90 -95 -100 -105 -110 -115 -120 1000 FREQUENCY (MHz) FIGURE 19. REVERSE TRANSADMITTANCE (Y12) vs FREQUENCY 5-6 PHASE-ANGLE OF REVERSE TRANSADMITTANCE (|θ12|) (DEGREES) TA = 25oC VCE = 6V IC = 1mA CA3127 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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