CD40106

CD40106BMS December 1992 CMOS Hex Schmitt Triggers Pinout CD40106BMS TOP VIEW A1 G=A 2 B3 H=B 4 14 VDD 13 F 12 L = F 11 E 10 K = E 9D 8 J=D Features • High Voltage Type (20V Rating) • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V - 3.5V at VDD = 15V • Noise Immunity Greater than 50% • No Limit on Input Rise and Fall Times • Low VDD to VSS Current During Slow Input Ramp • 100% Tested for Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Standardized Symmetrical Output Characteristics • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” C5 I=C 6 VSS 7 Functional Diagram A 1 2 G=A B 3 4 H=B Applications • Wave and Pulse Shapers • High Noise Environment Systems • Monostable Multivibrators C 5 6 I=C D 9 8 J=D E 11 10 K=E • Astable Multivibrators Description CD40106BMS consists of six Schmitt trigger circuits. Each circuit functions as an inverter with Schmitt trigger action on the input. The trigger switches at different points for positive and negative going signals. The difference between the positive going voltage (VP) and the negative going voltage (VN) is defined as hysteresis voltage (VH) (see Figure 17). The CD40106BMS is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4Q H1B H3W * F 13 12 L=F Logic Diagram A 1 (3, 5, 9, 11, 13) * * G 2 (4, 6, 8, 10, 12) VDD ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VSS FIGURE 1. 1 OF 6 SCHMITT TRIGGERS CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 3354 7-1327 Specifications CD40106BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 2) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Positive Trigger Threshold Voltage (See Figure 17) Negative Trigger Threshold Voltage (See Figure 17) Hysteresis Voltage (See Figure 17) VP5 VP10 VP15 VN5 VN10 VN15 VH5 VH10 VH15 VDD = 5V VDD = 10V VDD = 15V VDD = 5V VDD = 10V VDD = 15V VDD = 5V VDD = 10V VDD = 15V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +25oC, +25oC, +25oC, +25oC, +25oC, +25oC, LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +125oC, -55oC +125oC, +125oC, +125oC, +125oC, +125oC, -55oC -55oC -55oC -55oC -55oC 2.2 4.6 6.8 0.9 2.5 4 0.3 1.2 1.6 3.6 7.1 10.8 2.8 5.2 7.4 1.6 3.4 5.0 V V V V V V V V V -55oC MIN -100 -1000 -100 MAX 2 200 2 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8 UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND +25oC, +125oC, -55oC 14.95 0.53 1.4 3.5 -2.8 0.7 VOH > VOL < VDD/2 VDD/2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 7-1328 Specifications CD40106BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 280 378 200 270 UNITS ns ns ns ns PARAMETER Propagation Delay SYMBOL TPHL TPLH TTHL TTLH CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND Transition Time +25oC +125oC, -55oC NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 MAX 1 30 2 60 2 120 50 50 -0.36 -0.64 -1.15 -2.0 -0.9 -1.6 -2.4 -4.2 140 120 100 80 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA ns ns ns ns +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55oC Propagation Delay TPHL TPLH TTHL TTLH VDD = 10V VDD = 15V VDD = 10V VDD = 15V 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC +25oC +25oC +25oC Transition Time 7-1329 Specifications CD40106BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K., Input TR, TF < 20ns SYMBOL CIN CONDITIONS Any Input NOTES 1, 2 TEMPERATURE +25oC MIN MAX 7.5 UNITS pF TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VTN VTP ∆VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 0.2µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A 7-1330 Specifications CD40106BMS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V OPEN 2, 4, 6, 8, 10, 12 2, 4, 6, 8, 10, 12 2, 4, 6, 8, 10, 12 GROUND 1, 3, 5, 7, 9, 11, 13 7 7 7 VDD 14 1, 3, 5, 9, 11, 13, 14 14 1, 3, 5, 9, 11, 13, 14 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13 9V ± -0.5V 50kHz 25kHz Typical Performance Characteristics OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC 30 25 20 15 10 5 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 2.5 10V 10V 5V 0 5 10 15 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 7-1331 Specifications CD40106BMS Typical Performance Characteristics DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V (Continued) 0 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -5 -10 -15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V 0 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -5 -10V -20 -25 -10V -10 -15V -30 -15V -15 FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 15.0 OUTPUT VOLTAGE (VO) (V) 12.5 10.0 7.5 5.0 2.5 0 0 CURRENT PEAK 10V CURRENT PEAK 5V 1 VDD DRAIN CURRENT (ID) (mA) 1.5 FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS SUPPLY VOLTAGE (VDD) = 15V 15 OUTPUT VOLTAGE (VO) (V) VDD VIN 2 VO 1.0 10 10V VIN 1 2 VO VO ID ALL ID OTHER INPUTS TO VDD OR VSS -55oC 5 5V +125oC 0.5 ALL OTHER INPUTS TO VDD OR VSS 0 2.5 5.0 7.5 10.0 12.5 15.0 0 0 5 10 INPUT VOLTAGE (VI) (V) 15 INPUT VOLTAGE (VI) (V) FIGURE 6. TYPICAL CURRENT AND VOLTAGE TRANSFER CHARACTERISTICS 200 PROPAGATION TIME (tPHL, tPLH) (ns) FIGURE 7. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE 150 SUPPLY VOLTAGE (VDD) = 5V TRANSITION TIME (tTHL, tTLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC 200 SUPPLY VOLTAGE (VDD) = 5V 100 10V 5V 150 100 10V 50 15V 50 0 0 20 40 60 80 LOAD CAPACITANCE (CL) (pF) 100 0 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE FIGURE 9. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE 7-1332 CD40106BMS Typical Performance Characteristics POWER DISSIPATION PER TRIGGER (PD) (µW) 105 8 6 4 2 (Continued) AMBIENT TEMPERATURE (TA) = +25oC TRIGGER THRESHOLD VOLTAGE (VP, VN) (V) 104 8 6 4 2 AMBIENT TEMPERATURE (TA) = +25oC INPUT ON TERMINALS 1, 5, 8, 12 OR 2, 6, 9, 13; OTHER INPUTS TIED TO VDD 15 SUPPLY VOLTAGE (VDD) = 15V 5V 10V 103 8 6 4 2 VP 10 VN 5 102 8 6 4 2 CL = 50pF CL = 15pF 2 468 2 468 2 468 2 468 2 468 10 10-1 0 1 10 102 103 INPUT FREQUENCY (f) (kHz) 104 0 5 10 15 20 SUPPLY VOLTAGE (VDD) (V) FIGURE 10. TYPICAL POWER DISSIPATION PER TRIGGER AS A FUNCTION OF INPUT FREQUENCY FIGURE 11. TYPICAL TRIGGER THRESHOLD VOLTAGE AS A FUNCTION OF SUPPLY VOLTAGE 104 8 VH X 100 PERCENT VDD AMBIENT TEMPERATURE (TA) = +25oC POWER DISSIPATION (PD) (µW) 25 20 15 10 5 0 103 8 SUPPLY VOLTAGE (VDD) = 15pF 6 FREQUENCY (f) = 100kHz 4 2 6 4 2 ( HYSTERESIS FIGURE 12. TYPICAL PERCENT HYSTERESIS AS A FUNCTION OF SUPPLY VOLTAGE Applications VDD R 1/3 CD4007UB VDD VSS 1/6 CD40106BMS VSS VDD VDD VSS tM = RC n VDD VDD-VP VSS C 1 2 tM VDD 1/6 CD40106BMS VSS ( 102 8 6 4 2 6 4 2 6 4 2 15V, 10kHz 10 8 15V, 1kHz 10V, 1kHz 5V, 1kHz 18 10-1 AMBIENT TEMPERATURE (TA) = +25oC LOAD CAPACITANCE (CL) = 15pF 10 102 103 RISE AND FALL TIME (tr, tf) (ns) 2 468 2 468 2 468 2 468 0 5 10 15 20 2 468 0.1 1 104 SUPPLY VOLTAGE (VDD) (V) FIGURE 13. TYPICAL POWER DISSIPATION AS A FUNCTION OF RISE AND FALL TIMES FREQUENCY RANGE OF WAVE SHAPE IS FROM DC TO 1MHz 50kΩ ≤ R ≤ 1MΩ 100pF ≤ C ≤ 1µF FOR THE RANGE OF R AND C GIVEN 5µs < tM < 1s FIGURE 14. WAVE SHAPER FIGURE 15. MONOSTABLE MULTIVIBRATOR 7-1333 CD40106BMS Applications (Continued) tA VDD 1/6 CD40106BMS VSS VP VN VDD-VN VDD-VP tA = RC n R C VSS 50kΩ ≤ R ≤ 1MΩ 100pF ≤ C ≤ 1µF FOR THE RANGE OF R AND C GIVEN 2µs < tA < 0.4s FIGURE 16. ASTABLE MULTIVIBRATOR VP VDD VIN VSS VDD VO VSS (a) DEFINITION OF VP, VN, VH (b) TRANSFER CHARACTERISTIC OF 1 OF 6 GATES VN VP VH VO VH VH = VP - VN VIN VIN VO VN FIGURE 17. HYSTERESIS DEFINITION, CHARACTERISTICS, AND TEST SETUP OUTPUT CHARACTERISTIC VDD LOGIC “1” OUTPUT REGION VP VOH LOGIC “0” OUTPUT REGION VOL VSS VN INPUT CHARACTERISTIC LOGIC “1” INPUT REGION VOH VOL LOGIC “0” INPUT REGION DRIVER LOAD FIGURE 18. INPUT AND OUTPUT CHARACTERISTICS 7-1334 CD40106BMS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. 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