CD40107

CD40107BMS December 1992 CMOS Dual 2 Input NAND Buffer/Driver Pinouts CD40107BF TOP VIEW Features • High Voltage Type (20V Rating) • 32 Times Standard B Series Output Current Drive Sinking Capability - 136mA Typ. at VDD = 10V - VDS = 1V • 100% Tested for Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Noise Margin (Over Full Package/Temperature Range) RL to VDD = 10kΩ - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” NC 1 NC 2 A3 B4 C=A• B 5 NC 6 VSS 7 14 VDD 13 NC 12 NC 11 D 10 E 9 F=D• E 8 NC NC = NO CONNECTION Functional Diagram C=A• B A B VSS Applications • Driving Relays, Lamps, LEDs • Line Driver • Level Shifter (Up or Down) Description CD40107BMS is a dual 2 input NAND buffer/driver containing two independent 2 input NAND buffers with open drain single n-channel transistor outputs. This device features a wired OR capability and high output sink current capability (136mA typ. at VDD = 10V, VDS = 1V). The CD40107BMS is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4H H1B H3W D E F=D• E VSS CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 3355 7-18 Specifications CD40107BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Drive Voltage Output Drive Voltage Output Drive Voltage Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional (Note 3) VOL5A VOL5B VDD = 5V, IOL = 16mA VDD = 5V, IOL = 34mA 3 1 2 3 1 2 3 1 1 1 1 1 LIMITS TEMPERATURE +25oC +125 C -55oC +25 C +125oC -55oC +25 C +125oC -55oC +25 C +25oC +25 C +25oC +25oC o o o o o PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND MIN -100 -1000 -100 - MAX 2 200 2 100 1000 100 0.4 1.0 0.5 1.0 0.5 UNITS µA µA µA nA nA nA nA nA nA V V V V V VOL10A VDD = 10V, IOL = 37mA VOL10B VDD = 10V, IOL = 68mA VOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2, 3) Input Voltage High (Note 2, 3) Input Voltage Low (Note 2, 3) Input Voltage High (Note 2, 3) Tri-State Output Leakage High VIL VIH VIL VIH IOZ VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VIN = VDD or GND VOUT = VDD VDD = 20V VDD = 18V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. VDD = 15V, IOL = 50mA No Internal Pull-Up Device 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2 3 +25oC +25 C +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC -55oC o -2.8 0.7 -0.7 2.8 V V V VOH > VOL < VDD/2 VDD/2 3.5 11 - 1.5 4 2 20 2 V V V V µA µA µA 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 7-19 Specifications CD40107BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 200 270 100 135 UNITS ns ns ns ns PARAMETER Propagation Delay SYMBOL TPHL TPLH TTHL TTLH CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND Transition Time +25oC +125oC, -55oC NOTES: 1. CL = 50pF, RL = 120Ω, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC MIN 4.95 9.95 12 21 25 44 28 49 51 89 38 66 +7 MAX 1 30 2 60 2 120 50 50 3 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA V V +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage (Note 5) Output Voltage (Note 5) Output Current (Sink) VOL VOL VOH VOH IOL5A VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5.0V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL5B VDD = 5V, VOUT = 1.0V 1, 2, 4 +125oC -55oC Output Current (Sink) IOL10A VDD = 10V, VOUT = 0.5V 1, 2, 4 +125oC -55oC Output Current (Sink) IOL10B VDD = 10V, VOUT = 1V 1, 2, 4 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 0.5V 1, 2 +125oC -55oC Input Voltage Low Input Voltage High VIL VIH VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V 1, 2, 4 1, 2, 4 +25oC, +125oC, -55oC +25oC, +125oC, -55oC 7-20 Specifications CD40107BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Propagation Delay SYMBOL TPHL CONDITIONS VDD = 10V VDD = 15V Propagation Delay TPLH VDD = 10V VDD = 15V Transition Time TTHL VDD = 10V VDD = 15V Transition Time TTLH VDD = 10V VDD = 15V Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 120Ω, pull up resistor to VDD, Input TR, TF < 20ns. 4. Measured with external pull-up resistor RL = 10K to VDD CIN Any Input NOTES 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC +25 C +25oC +25oC o MIN - MAX 90 60 120 100 40 20 70 50 7.5 UNITS ns ns ns ns ns ns ns ns pF TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VTN VTP ∆VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1, 5 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 120Ω, pull up resistor to VDD, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record 5. Measured with external pull-up resistor RL = 10K to VDD TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-1 SYMBOL IDD ± 0.2µA DELTA LIMIT 7-21 Specifications CD40107BMS TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Output Current (Sink) Output Current (Source) SYMBOL IOL5 IOH5A DELTA LIMIT ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 (Note 1) Static Burn-In 2 (Note 1) Dynamic Burn-In (Note 3) Irradiation (Note 2) NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 3. Each pin except VDD and GND will have a series resistor of 4.75K ±5%, VDD = 18V ±.5. OPEN 1, 2, 5, 6, 8, 9, 12, 13 1, 2, 5, 6, 8, 9, 12, 13 1, 2, 6, 8, 12, 13 1, 2, 5, 6, 8, 9, 12, 13 GROUND 3, 4, 7, 10, 11 7 7 7 VDD 14 3, 4, 10, 11, 14 14 3, 4, 10, 11, 14 5, 9 3, 4, 10, 11 9V ± -0.5V 50kHz 25kHz 7-22 CD40107BMS Schematic VDD VDD * ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK TRUTH TABLE A 3, (11) B 4, (10) VDD = 14 VSS NOTE: 1 OF 2 GATES (NUMBERS IN PARENTHESES ARE TERMINAL NUMBERS FOR SECOND GATE) VSS = 7 * C=A• B 5, (9) VSS A 0 1 0 1 B 0 0 1 1 1* 1* 1* 0 C Z** Z** Z** * * Requires external pull-up resistor (RL) to VDD. ** Without pull-up resistor (3-state). FIGURE 1. 1 OF 2 GATES Typical Performance Characteristics OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC 960 800 640 480 320 160 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 480 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 400 320 240 160 80 10V 10V 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 80 TRANSITION TIME (tTLH, tTHL) (ns) 70 60 50 40 15V tTLH 30 10V tTHL 20 15V tTHL 10 0 0 10 20 30 40 50 60 70 80 90 100 AMBIENT TEMPERATURE (TA) = +25oC RL = 120Ω TO VDD FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC 175 PROPAGATION DELAY TIME (tPLH, tPHL) (ns) 150 125 100 75 15V tPLH 50 10V TPHL 25 15V tPHL 10V tPHL 10V tPLH RL = 120Ω TO VDD SUPPLY VOLTAGE (VDD) = 5V tTLH 5V tTHL 10V tTLH SUPPLY VOLTAGE (VDD) = 5V tPLH, tPHL 10 20 30 40 50 60 70 80 90 100 LOAD CAPACITANCE (CL) (pF) LOAD CAPACITANCE (CL) (pF) FIGURE 4. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE FIGURE 5. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE 7-23 CD40107BMS Typical Performance Characteristics 105 8 DISSIPATION PER BUFFER (PD) (µW) 2 (Continued) 6 AMBIENT TEMPERATURE (TA) = +25oC 4 SUPPLY VOLTAGE (VDD) = 15V 5V 104 8 6 4 2 103 8 6 4 2 10V 102 8 6 4 2 CL = 50pF CL = 15pF 2 4 68 101 100 101 102 103 104 INPUT FREQUENCY (fI) (kHz) 2 4 68 2 4 68 2 4 68 2 4 68 105 FIGURE 6. TYPICAL POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY Chip Dimensions and Pad Layout NOTE: Numbers inside pads for CD40107BE not offered as standard part. Numbers outside chip are for CD40107BF Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: BOND PADS: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches Special Considerations Limiting Capacitive Currents for CL > 500pF, VDD > 15V For VDD > 15V, and load capacitance (CL) from output to ground > 500pF, an external 25Ω series limiting resistor should be inserted between the output terminal and CL. No external resistor is necessary if CL < 500pF or VDD < 15V. Driving Inductive Loads When using the CD40107BMS to drive inductive loads, the load should be shunted with a diode to prevent high voltages from developing across the CD40107BMS output. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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