CD40182BMS

CD40182BMS December 1992 CMOS Look-Ahead Carry Generator Description The CD40182BMS is a high-speed look-ahead carry generator capable of anticipating a carry across four binary adders or groups of adders. The CD40182BMS is cascadable to perform full look-ahead across n-bit adders. Carry, propagate-carry, and generate-carry functions are provided as enumerated in the terminal designation below. The CD40182BMS, when used in conjuction with the CD40181BMS arithmetic logic unit (ALU), provides full highspeed look-ahead carry capability for up to n-bit words. Each CD40182BMS generates the look-ahead (anticipated carry) across a group of four ALU’s. In addition, other CD40182BMS’s may be employed to anticipate the carry across sections of four look-ahead blocks up to n-bits. Carry inputs and outputs of the CD40181BMS are active-high logic, and carry-generate (G) and carry-propagate (P) outputs are active-low. Therefore the inputs and outputs of the CD40182BMS are compatible. The CD40182BMS is supplied in these 16-lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4V H1E H6P Features • High Voltage Type (20V Rating) • Generates High-Speed Carry Across Four Adders or Adder Groups • High-Speed Operation - tPHL, tPLH =100 ns (typ) at VDD = 10V • Cascadable for Fast Carries Over N Bits • Designed for Use with CD40181BMS ALU • 100% Tested for Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Noise Margin (Over Full Package/Temperature Range) - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” The CD40182BMS is similar to industry type MC14582. Applications • High-Speed Parallel Arithmetric Units • Multi-Level Look-Ahead Carry Generation for Long Word Lengths Pinout CD40182BMS TOP VIEW Functional Diagram G1 1 P1 2 G0 3 P0 4 G3 5 P3 6 P7 VSS 8 16 VDD 15 P2 14 G2 13 Cn 12 Cn + x 11 Cn + y 10 G 9 Cn + z VDD = 16 VSS = 8 G 3 G0 1 G1 14 G2 5 G3 4 P0 2 P1 15 P2 6 P3 Cn 13 12 11 9 Cn + x Cn + y Cn + z P 7 P 10 G CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 3362 7-1410 Specifications CD40182BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20V 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20V 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +25oC, LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +125oC, +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 3.5 11 1.5 4 V V V V -55oC -55oC MIN -100 -1000 -100 14.95 0.53 1.4 3.5 -2.8 0.7 MAX 10 1000 10 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8 UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VOH > VOL < VDD/2 VDD/2 NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 7-1411 Specifications CD40182BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN o PARAMETER Propagation Delay P, G In to P, G Out and Carry Outs Propagation Delay Cn to Carry Outs Transition Time SYMBOL TPHL1 TPLH1 TPHL2 TPLH2 TTHL TTLH CONDITIONS (NOTES 1, 2) VDD = 5V, VIN = VDD or GND MAX 400 540 480 648 200 270 UNITS ns ns ns ns ns ns +25oC +125 C, -55 C +25 C +125oC, -55oC o o - NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55 C, +25 C +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55oC Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 50 -0.36 -0.64 -1.15 -2.0 -0.9 -1.6 -2.4 -4.2 3 mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA V o o MIN - MAX 5 150 10 300 10 600 50 UNITS µA µA µA µA µA µA mV 7-1412 Specifications CD40182BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Voltage High Propagation Delay P, G In to P, G Out and Carry Outs Propagation Delay Cn to Carry Outs Transition Time SYMBOL VIH TPHL1 TPLH1 TPHL2 TPLH2 TTHL TTLH CIN CONDITIONS VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V Any Input NOTES 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC, +125oC, -55oC +25oC +25o C 200 150 240 180 100 80 7.5 ns ns ns ns ns ns pF MIN 7 MAX UNITS V +25oC +25oC +25oC +25oC +25oC Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K., Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VTN VTP ∆VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25 C +25 C +25oC +25 C +25oC o o o MIN -2.8 0.2 VOH > VDD/2 - MAX 25 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-2 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 1.0µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT 7-1413 Specifications CD40182BMS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 (Note 1) Static Burn-In 2 (Note 1) Dynamic BurnIn (Note 1) Irradiation (Note 2) NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V OPEN 7, 9 - 12 7, 9 - 12 7, 9 - 12 GROUND 1 - 6, 8, 13 - 15 8 8 8 VDD 16 1 - 6, 13 - 16 16 1 - 6, 13 - 16 7, 9 - 12 1 - 6, 14, 15 13 9V ± -0.5V 50kHz 25kHz TABLE 9. TERMINAL DESIGNATIONS DESIGNATION G0, G1, G2, G3 TERM. 3, 1, 14, 5 FUNCTION Active-Low Carry-Generate Inputs Active-Low Carry-Propagate Inputs Active-High Carry Input Active-High Carry Outputs P0, P1, P2, P3 4, 2, 15, 6 Cn Cn + x, Cn + y, Cn + z 13 12, 11, 9 7-1414 Specifications CD40182BMS TABLE 9. TERMINAL DESIGNATIONS (Continued) DESIGNATION G TERM. 10 FUNCTION Active-Low Group Carry-Generate Output Active-Low Group Carry-Propagate Output P 7 Logic Diagram P 7 G P3 10 * * 6 G3 5 Cn + z P2 9 * * 15 G2 14 P1 Cn + y 11 VDD * * * * 2 G1 1 P0 4 G0 3 Cn Cn + x 12 VSS *ALL INPUTS ARE PROTECTED BY COS/MOS PROTECTION NETWORK * 13 FIGURE 1. CD40182BMS LOGIC DIAGRAM CD40182BMS LOGIC EQUATIONS Cn + x = G0 + P0 • Cn Cn + y = G1 + P1 • G0 + P1 • P0 • Cn Cn + z = G2 + P2 • G1 + P2 • P1 • G0 + P2 • P1 • P0 • Cn G = G3 + P3 • G2 + P3 • P2 • G1 + P3 • P2 • P1 • G0 P = P3 • P2 • P1 • P0 7-1415 CD40182BMS Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) 30 25 20 15 10 5 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 2.5 10V 10V 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V FIGURE 3. MIMIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 0 0 -5 -10 -15 0 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -10V -20 -25 -10V -10 -15V -30 -15V -15 FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 1416 CD40182BMS Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTHL, tTLH) (ns) (Continued) PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC 350 300 250 200 150 10V 100 50 15V 200 SUPPLY VOLTAGE (VDD) = 5V SUPPLY VOLTAGE (VDD) = 5V 150 100 10V 50 15V 0 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) 0 10 20 30 40 50 60 70 80 90 100 LOAD CAPACITANCE (CL) (pF) FIGURE 6. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE FIGURE 7. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE (P, G IN TO P, G OUT AND CARRY-OUTS) 106 8 6 4 2 AMBIENT TEMPERATURE (TA) = +25oC POWER DISSIPATION (PD) (µW) 105 SUPPLY VOLTAGE (VDD) = 15V 8 6 4 104 2 8 6 4 10V 10V 5V CL = 50pF CL = 15pF 2 4 68 2 4 68 2 4 68 2 4 68 103 2 8 6 4 102 2 1 103 10 102 INPUT FREQUENCY (fI) (kHz) 104 FIGURE 8. TYPICAL POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY (4) CD40181BMS CARRY IN Cn G P Cn G P Cn G P Cn G P CARRY OUT Cn G0 P0 Cn + x G1 P1 Cn + y G2 P2 Cn + z G3 G P3 P LOOK-AHEAD OUTPUTS CD40182BMS FIGURE 9. 16-BIT TWO-LEVEL LOOK-AHEAD ALU 7-1417 CD40182BMS (16) CD40181BMS Cn GP Cn GP Cn GP Cn GP Cn GP Cn GP Cn GP Cn GP Cn GP G0 P0 Cn + x G1 P1 Cn Cn + y G2 P2 Cn + z G3 P3 GP G0 P0 Cn + x G1 P1 Cn Cn + y G2 P2 Cn + z G3 P3 G0 P0 Cn CD40182BMS CD40182BMS G0 P0 Cn Cn + x CD40182BMS G1 P1 Cn + y FIGURE 10. 64-BIT FULL CARRY LOOK-AHEAD ALU IN 3 LEVELS CD40181BMS Cn Cn + 4 Cn Cn + 4 Cn GP Cn GP Cn GP Cn Cn+4 Cn Cn+4 Cn GP Cn GP G0 P0 Cn + x G1 P1 Cn + y G2 P2 Cn + z G3 P3 Cn CD40182BMS GP G0 P0 Cn + x Cn G1 P1 Cn + y CD40181BMS FIGURE 11. COMBINED TWO-LEVEL LOOK-AHEAD AND RIPPLE-CARRY ALU Chip Dimensions and Pad Layout METALLIZATION: PASSIVATION: BOND PADS: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches The photographs and dimensions of each CMOS chip represent a chip when it is part of the wafer. When the wafer is separated into individual chips, the angle of cleavage may vary with respect to the chip face for different chips. The actual dimensions of the isolated chip, therefore, may differ slightly from the nominal dimensions shown. The user should consider a tolerance of -3 mils to +16 mils applicable to the nominal dimensions shown. Dimension in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). 7-1418