CD4041BMS

CD4041UBMS Data Sheet December 1992 File Number 3309 CMOS Quad True/Complement Buffer CD4041UBMS types are quad true/complement buffers consisting of n- and p- channel units having low channel resistance and high current (sourcing and sinking) capability. The CD4041UBMS is intended for use as a buffer, line driver, or CMOS-to-TTL driver. It can be used as an ultra-low power resistor-network driver for A/D and D/A conversion, as a transmission-line driver, and in other applications where high noise immunity and low power dissipation are primary design requirements. The CD4041UBMS is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4Q H1B H3W Features • High Voltage Type (20V Rating) • Balanced Sink and Source Current; Approximately 4 Times Standard “B” Drive • Equalized Delay to True and Complement Outputs • 100% Tested for Quiescent Current at 20V • Maximum Input Current of 1µA at 18V Over Full Package-Temperature Range; - 100nA at 18V and +25oC • 5V, 10V and 15V Parametric Ratings • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specificationsfor Description of ‘B’ Series CMOS Devices” Pinout CD4041UBMS TOP VIEW E=A 1 F=A 2 A3 G=B 4 H=B 5 B6 VSS 7 14 VDD 13 D 12 N = D 11 M = D 10 C 9 L=C 8 K=C Applications • High Current Source/Sink Driver • CMOS-to-DTL/TTL Converter Buffer • Display Driver • MOS Clock Driver • Resistor Network Driver (Ladder or Weighted R) • Buffer • Transmission Line Driver Functional Diagram 3 A E=A F=A 6 B G=B H=B 10 C K=C L=C 13 D VSS = 7 VDD = 14 M=D N=D 11 M 12 N 9 L 8 K 5 H 4 G 2 F 1 E INPUT* VDD VDD VDD TRUE OUTPUT VSS VSS VSS P VSS VDD COMPLEMENT OUTPUT *ALL INPUTS PROTECTED BY CMOS INPUT PROTECTION NETWORK VDD N VSS FIGURE 1. SCHEMATIC DIAGRAM 1 OF 4 BUFFERS 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 CD4041UBMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance. . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 4.0 12.5 1.0 2.5 V V V V MIN -100 -1000 -100 14.95 1.6 5.0 19 -2.8 0.7 MAX 2 200 2 100 1000 100 50 -1.6 -6.4 -5.0 -19 -0.7 2.8 UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VOH > VOL < VDD/2 VDD/2 NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 2 CD4041UBMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC MIN MAX 120 162 80 108 UNITS ns ns ns ns PARAMETER Propagation Delay SYMBOL TPHL TPLH TTHL TTLH CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND Transition Time NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55oC Input Voltage Low Input Voltage High Propagation Delay VIL VIH TPHL TPLH VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V 1, 2 1, 2 1, 2, 3 1, 2, 3 +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC +25oC MIN 4.95 9.95 1.2 2.1 3.5 6.25 13 24 8 MAX 1 30 2 60 2 120 50 50 -1.2 -2.1 -4.6 -8.4 -3.5 -6.25 -13 -24 2 70 50 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA V V ns ns 3 CD4041UBMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Transition Time SYMBOL TTHL TTLH CIN CONDITIONS VDD = 10V VDD = 15V Any Input NOTES 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC +25oC +25oC MIN MAX 40 30 22.5 UNITS ns ns pF Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VTN VTP ∆VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 0.2µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A 4 CD4041UBMS TABLE 6. APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP Group D MIL-STD-883 METHOD Sample 5005 GROUP A SUBGROUPS 1, 2, 3, 8A, 8B, 9 READ AND RECORD Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9, Deltas POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 (Note 1) Static Burn-In 2 (Note 1) Dynamic BurnIn (Note 2) Irradiation (Note 3) NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 4.75K ± 5%; VDD = 18V ± 0.5V 3. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V OPEN 1, 2, 4, 5, 8, 9, 11, 12 1, 2, 4, 5, 8, 9, 11, 12 1, 2, 4, 5, 8, 9, 11, 12 GROUND 3, 6, 7, 10, 13 7 7 7 VDD 14 3, 6, 10, 13, 14 14 3, 6, 10, 13, 14 1, 2, 4, 5, 8, 9, 11, 12 3, 6, 10, 13 9V ± -0.5V 50kHz 25kHz Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC OUTPUT LOW CURRENT (IOL) (mA) GATE-TO-SOURCE VOLTAGE (VGS) = 15V 60 50 40 30 20 10 OUTPUT LOW CURRENT (IOL) (mA) 70 70 60 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 50 40 30 20 10 5V 0 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 0 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 10V AMBIENT TEMPERATURE (TA) = +25oC 10V 5V FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS FIGURE 3. MINIMUM LOW (SINK) CURRENT CHARACTERISTICS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 5 CD4041UBMS Typical Performance Characteristics DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -8 -7 -5 -3 -6 -4 -2 AMBIENT TEMPERATURE (TA) = +25oC -10 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -20 -30 -40 -50 -10V -60 -15V -70 (Continued) -1 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -8 -7 -5 -3 -6 -4 -2 -1 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 100 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -10 -20 -10V -30 -40 -50 -60 -70 -15V AMBIENT TEMPERATURE (TA) = +25oC FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS PROPAGATION DELAY TIME (tPHL, tPLH) (ns) FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTLH, tTHL) (ns) 80 70 60 50 40 30 20 10 0 10 20 30 50 70 40 60 80 LOAD CAPACITANCE (CL) (pF) 90 100 0 10V 15V SUPPLY VOLTAGE (VDD) = 5V 70 60 50 40 30 20 10 AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 5V 10V 15V 10 20 30 50 70 40 60 80 LOAD CAPACITANCE (CL) (pF) 90 FIGURE 6. TYPICAL PROPAGATION DELAY TIME vs LOAD CAPACITANCE FIGURE 7. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 15.0 12.5 10V 10.0 7.5 5V 5.0 2.5 VI VO 14 OUTPUT VOLTAGE (VO) (V) 12 10 8 6 VDD = 5V 4 2 VDD = 3V VDD = 10V AMBIENT TEMP (TA) = +25oC VI OUTPUT VOLTAGE (VO) (V) VO 0 2 4 6 8 10 12 14 INPUT VOLTAGE (VI) (V) 16 18 0 2.5 5.0 7.5 10 12.5 15 INPUT VOLTAGE (VI) (V) FIGURE 8. MINIMUM AND MAXIMUM TRANSFER CHARACTERISTICS - TRUE OUTPUT FIGURE 9. MINIMUM AND MAXIMUM TRANSFER CHARACTERISTICS - COMPLEMENT OUTPUT 6 CD4041UBMS Typical Performance Characteristics (Continued) 4 2 AMBIENT TEMPERATURE (TA) = +25oC INPUT tr = tp = 20ns POWER DISSIPATION PER OUTPUT PAIR (PD) (µW) 8 6 4 2 105 8 6 4 2 104 8 6 4 AMBIENT TEMPERATURE (TA) = +25oC 1kHz AT 15V POWER DISSIPATION (PD) (µW) (PER OUTPUT PAIR) 100kHz AT 15V 105 8 6 4 2 VDD = 15V 10V 104 8 6 4 2 5V 5V 3V 103 8 6 4 2 10kHz AT 15V 100kHz AT 5V 103 8 6 4 2 6 4 2 102 8 6 4 2 10kHz AT 5V 1kHz AT 5V 2 4 68 2 102 4 68 2 103 4 68 2 104 4 68 2 105 4 68 2 106 4 68 107 102 8 10 8 6 4 2 2 101 8 6 4 2 2 4 68 2 4 68 2 CL = 15pF CL = 50pF 4 68 2 4 68 10 INPUT RISE AND FALL TIME (tr, tf) (ns) 103 104 105 106 FREQUENCY (f) (Hz) 107 FIGURE 10. TYPICAL POWER DISSIPATION vs INPUT RISE AND FALL TIME PER OUTPUT PAIR FIGURE 11. TYPICAL POWER DISSIPATION vs FREQUENCY PER OUTPUT PAIR Chip Dimensions and Pad Layout 8 7 6 9 5 10 METALLIZATION: Thickness: 11kÅ − 14kÅ, 4 11 AL. PASSIVATION: BOND PADS: 10.4kÅ - 15.6kÅ, Silane 0.004 inches X 0.004 inches MIN 0.0198 inches - 0.0218 inches DIE THICKNESS: 3 12 DIE SIZE: X = 72 (69 - 77) Y = 82 (79 - 87) 2 13 14 1 Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch) 7