CD4085

CD4085BMS December 1992 CMOS Dual 2 Wide 2 Input AND-OR-INVERT Gate Pinout CD4085BMS TOP VIEW Features • High Voltage Type (20V Rating) • Medium Speed Operation - tPHL = 90ns - tPLH = 125ns (Typ.) at 10V • Individual Inhibit Controls • 5V, 10V and 15V Parametric Ratings • Standardized Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Noise Margin (Over Full Package/Temperature Range) - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” A1 1 B1 2 E1 = INHI + A1B1 + C1D1 3 E2 = INH2 + A2B2 + C2D2 4 A2 5 B2 6 VSS 7 14 VDD 13 D1 12 C1 11 INHIBIT 2 10 INHIBIT 1 9 D2 8 C2 Functional Diagram INHIBIT 1 10 Description CD4085BMS contains a pair of AND-OR-INVERT gates, each consisting of two 2 input AND gates driving a 3 input NOR gate. Individual inhibit controls are provided for both A-O-I gates.. The CD4085BMS is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4H H1B H5W 1 A1 2 B1 12 C1 13 D1 INHIBIT 2 11 3 E1 5 A2 6 B2 8 C2 9 D2 4 E2 E = INHIBIT + AB + CD LOGIC 1 = HIGH LOGIC 0 = LOW VDD = 14 VSS = 7 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 3327 7-1046 Specifications CD4085BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 LIMITS TEMPERATURE +25 oC PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND MIN -100 -1000 -100 - MAX 2 200 2 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8 UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V +125oC -55oC +25o C +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 14.95 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 3.5 11 0.53 1.4 3.5 -2.8 0.7 VOH > VOL < VDD/2 VDD/2 1.5 4 - V V V V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 7-1047 Specifications CD4085BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 TPLH1 VDD = 5V, VIN = VDD or GND 9 10, 11 TPHL2 VDD = 5V, VIN = VDD or GND 9 10, 11 TPLH2 VDD = 5V, VIN = VDD or GND 9 10, 11 TTHL TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 450 608 620 837 300 405 500 675 200 270 UNITS ns ns ns ns ns ns ns ns ns ns PARAMETER Propagation Delay Data Propagation Delay Data Propagation Delay Inhibit Propagation Delay Inhibit Transition Time SYMBOL TPHL1 CONDITIONS (NOTES 1, 2) VDD = 5V, VIN = VDD or GND +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 MAX 1 30 2 60 2 120 50 50 -0.36 -0.64 -1.15 -2.0 -0.9 -2.6 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC 7-1048 Specifications CD4085BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Output Current (Source) SYMBOL IOH15 CONDITIONS VDD =15V, VOUT = 13.5V NOTES 1, 2 TEMPERATURE +125oC -55oC Input Voltage Low Input Voltage High Propagation Delay Data VIL VIH TPHL1 VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V Propagation Delay Data TPLH1 VDD = 10V VDD = 15V Propagation Delay Inhibit Propagation Delay Inhibit Transition Time TPHL2 VDD = 10V VDD = 15V TPLH2 VDD = 10V VDD = 15V TTHL TTLH CIN VDD = 10V VDD = 15V Any Input 1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25 C +25 C +25 C +25oC +25 C +25 C +25oC +25oC +25oC +25oC o o o o o MIN +7 - MAX -2.4 -4.2 3 180 130 250 180 120 80 200 140 100 80 7.5 UNITS mA mA V V ns ns ns ns ns ns ns ns ns ns pF Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VTN VTP ∆VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - MSI-1 Output Current (Sink) SYMBOL IDD IOL5 ± 0.2µA ± 20% x Pre-Test Reading DELTA LIMIT 7-1049 Specifications CD4085BMS TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Output Current (Source) SYMBOL IOH5A DELTA LIMIT ± 20% x Pre-Test Reading TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V OPEN 3, 4 3, 4 3, 4 GROUND 1, 2, 5-13 7 7 7 VDD 14 1, 2, 5, 6, 8-14 14 1, 2, 5, 6, 8-14 3, 4 1, 2, 5, 6, 8, 9, 12, 13 10, 11 9V ± -0.5V 50kHz 25kHz 7-1050 CD4085BMS Schematic INHIBIT 1 10 * VDD p p VDD n A1 1 * p n p p B1 2 * VDD p VSS n p p n p n n n n p 3 E1 n C1 12 VSS * n D1 13 * VSS VDD p p VDD n A2 5 * p n p p B1 6 * VDD p VSS n p p n p n n n n p 4 E2 n C2 8 * n TERM. 14 = VDD TERM. 7 = VSS VSS VDD D2 9 * VSS * INHIBIT 2 11 * ALL INPUTS PROTECTED BY CMOS PROTECTION NETWORK VSS FIGURE 1. CD408B SCHEMATIC DIAGRAM 7-1051 CD4085BMS Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC 15 OUTPUT VOLTAGE (VO) - V CURRENT PEAK 10V VI CURRENT PEAK 5V VO 4 7 VSS ID 3 2 1 0 0 5 10 15 INPUT VOLTAGE (VI) - V SUPPLY VOLTAGE (VDD) = 15V VDD VDD 14 10 5 6 DRAINCURRENT (ID) - mA OUTPUT VOLTAGE (VO) - V 17.5 15 AMBIENT TEMPERATURE (TA) = +25oC MAX MIN 12.5 VDD 10 7.5 5 2.5 0 0 2.5 5 7.5 10 12.5 15 17.5 INPUT VOLTAGE (VI) - V 20 22.5 VI VDD 14 VO 7 VSS 5 FIGURE 2. TYPICAL VOLTAGE AND CURRENT TRANSFER CHARACTERISTICS 105 POWER DISSIPATION (PD) (µW) AMBIENT TEMPERATURE (TA) = +25oC FIGURE 3. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS 300 HIGH-TO-LOW LEVEL PROPAGATION DELAY TIME (tPHL) (ns) AMBIENT TEMPERATURE (TA) = +25oC 104 SUPPLY VOLTAGE (VDD) = 15V 103 10V 102 5V CL = 50pF CL = 15pF 10V 250 200 SUPPLY VOLTAGE (VDD) = 5V 150 10V 100 15V 50 101 100 10-1 100 101 102 103 104 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FREQUENCY (f) (kHz) FIGURE 4. TYPICAL POWER DISSIPATION vs FREQUENCY FIGURE 5. TYPICAL DATA HIGH-TO-LOW LEVEL PROPAGATION DELAY TIME vs LOAD CAPACITANCE PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC LOAD CAPACITANCE (CL) = 50pF AMBIENT TEMPERATURE (TA) = +25oC LOW-TO-HIGH LEVEL PROPAGATION DELAY TIME (tPLH) (ns) 1250 1000 750 500 250 tPHL 0 2.5 5 7.5 10 12.5 15 17.5 20 tPLH 400 350 300 250 200 150 100 50 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) 10V 15V SUPPLY VOLTAGE (VDD) = 5V SUPPLY VOLTAGE (VDD) (V) FIGURE 6. TYPICAL DATA LOW-TO-HIGH PROPAGATION DELAY TIME vs LOAD CAPACITANCE FIGURE 7. TYPICAL DATA PROPAGATION DELAY TIME vs SUPPLY VOLTAGE 7-1052 CD4085BMS Typical Performance Characteristics OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC (Continued) AMBIENT TEMPERATURE (TA) = +25oC OUTPUT LOW (SINK) CURRENT (IOL) (mA) 30 25 20 15 10 5 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 2.5 10V 10V 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 8. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS FIGURE 9. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTHL, tTLH) (ns) 0 0 -5 -10 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 200 SUPPLY VOLTAGE (VDD) = 5V -10V 100 10V 50 15V -15V 150 -15 -20 -25 -30 0 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 10. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE FIGURE 11. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V 0 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -5 -10V -10 -15V -15 FIGURE 12. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 7-1053 CD4085BMS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. 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