CD4503

CD4503BMS December 1992 File Number 3335 CMOS Hex Buffer CD4503BMS is a hex noninverting buffer with 3 state outputs having high sink and source current capability. Two disable controls are provided, one of which controls four buffers and the other controls the remaining two buffers. The CD4503BMS is supplied in these 16-lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4T H1E H6W Features • High Voltage Type (20V Rating) • 3 State Non-Inverting Type • 1 TTL Load Output Drive Capability • 2 Output Disable Controls • 3 State Outputs • Pin Compatible with MC14503, and 340097 Industry Types MM80C97, • 5V, 10V and 15V Parametric Ratings • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” Applications • 3 State Hex Buffer for Interfacing ICs with Data Buses • COS/MOS to TTL Hex Buffer Pinout CD4503BMS TOP VIEW Functional Diagram 1 2 3 DISABLE A DIS A D1 Q1 D2 Q2 D3 Q3 VSS 1 2 3 4 5 6 7 8 16 VDD 15 DIS B 14 D6 13 DQ6 12 D5 11 Q5 10 D4 9 Q4 D5 D4 D3 D2 D1 Q1 4 5 Q2 6 7 Q3 10 9 Q4 12 11 Q5 D6 DISABLE B VDD = 16 VSS = 8 14 15 13 Q6 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 CD4503BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance. . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) Tri-State Output Leakage VIL VIH VIL VIH IOZL VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VIN = VDD or GND VOUT = 0V VDD = 20V VDD = 18V Tri-State Output Leakage IOZH VIN = VDD or GND VOUT = VDD VDD = 20V VDD = 18V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 3 1 2 3 1 2 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2 3 1 2 3 LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC -55oC +25oC +125oC -55oC 3.5 11 -0.4 -12 -0.4 1.5 4 0.4 12 0.4 V V V V µA µA µA µA µA µA MIN -100 -1000 -100 14.95 2.1 5.5 16.1 -2.8 0.7 MAX 2 200 2 100 1000 100 50 -1.02 -4.8 -2.6 -6.8 -0.7 2.8 UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VOH > VOL < VDD/2 VDD/2 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 4-2 CD4503BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 9 10, 11 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN MAX 110 149 150 203 140 189 180 243 70 95 90 122 UNITS ns ns ns ns ns ns ns ns ns ns ns ns PARAMETER Propagation Delay Propagation Delay Propagation Delay3 State Propagation Delay3 State Transition Time Transition Time NOTES: SYMBOL TPHL TPLH TPHZ TPZH TPZL TPLZ TTHL TTLH CONDITIONS VDD = 5V, VIN = VDD or GND (Note 1, 2) VDD = 5V, VIN = VDD or GND (Note 1, 2) VDD = 5V, VIN = VDD or GND (Note 2, 3) VDD = 5V, VIN = VDD or GND (Note 2, 3) VDD = 5V, VIN = VDD or GND (Note 1, 2) VDD = 5V, VIN = VDD or GND (Note 1, 2) 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. 3. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) VOL VOL VOH VOH IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD =15V, VOUT = 13.5V NOTES 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 TEMPERATURE -55oC, +25oC +125oC -55oC, +25oC +125oC -55oC, +25oC +125oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC MIN 4.95 9.95 1.3 2.6 3.8 6.5 11.2 19.2 MAX 1 30 2 60 2 120 50 50 -0.7 -1.2 -3.0 -5.8 -1.8 -3.1 -4.8 -8.2 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA 4-3 CD4503BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Voltage Low Input Voltage High Propagation Delay Propagation Delay Propagation Delay Propagation Delay Transition Time Transition Time Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VTN VTP ∆VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V SYMBOL VIL VIH TPHL TPLH TPHZ TPZH TPZL TPLZ TTHL TTLH CIN CONDITIONS VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V VDD = 10V VDD = 15V Any Inputs NOTES 1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 4 1, 2, 4 1, 2, 4 1, 2, 4 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC MIN +7 MAX 3 50 35 70 50 60 50 80 70 40 25 45 35 7.5 UNITS V V ns ns ns ns ns ns ns ns ns ns ns ns pF ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER Supply Current - MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 0.2µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT 4-4 CD4503BMS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 (Note 1) Static Burn-In 2 (Note 1) Dynamic BurnIn (Note 1) Irradiation (Note 2) NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V OPEN 3, 5, 7, 9, 11, 13 3, 5, 7, 9, 11, 13 3, 5, 7, 9, 11, 13 GROUND 1, 2, 4, 6, 8,10, 12, 14, 15 8 1, 8, 15 8 VDD 16 1, 2, 4, 6, 10, 12, 14-16 16 1, 2, 4, 6, 10, 12, 14-16 3, 5, 7, 9, 11, 13 2, 4, 6, 10, 12, 14 9V ± -0.5V 50kHz 25kHz 4-5 CD4503BMS Logic Diagram VDD DI * 2 (4, 6, 10, 12, 14) QN 3 (5, 7, 9, 11, 13) DIS A (B) * 1 (15) DISABLE TO OTHER BUFFERS TRUTH TABLE DN 0 1 X VSS VDD DIS A (B) 0 0 1 Qn 0 1 High Z X = Don’t Care * ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VSS FIGURE 1. LOGIC DIAGRAM OF 1 TO 6 IDENTICAL BUFFERS Typical Performance Characteristics OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC 70 60 50 40 10V 30 20 10 5V 0 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 9 10 GATE-TO-SOURCE VOLTAGE (VGS) = 15V AMBIENT TEMPERATURE (TA) = +25oC 70 60 50 40 30 20 5V 10 10V GATE-TO-SOURCE VOLTAGE (VGS) = 15V 0 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 9 10 FIGURE 2. TYPICAL N-CHANNEL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS -9 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -6 -4 -2 -8 -7 -5 -3 -1 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) FIGURE 3. MINIMUM N-CHANNEL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS -9 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -8 -7 -6 -5 -4 -3 -2 -1 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) GATE-TO-SOURCE VOLTAGE (VGS) = -5V -10 -20 -30 -10V -40 -50 -15V -60 -70 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 -10 -10V -15 -20 -25 -15V -30 -35 AMBIENT TEMPERATURE (TA) = +25oC FIGURE 4. TYPICAL P-CHANNEL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE 5. MINIMUM P-CHANNEL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 4-6 CD4503BMS Typical Performance Characteristics PROPAGATION DELAY TIME (tPLH, tPHL) (ns) AMBIENT TEMPERATURE (TA) = +25oC 175 150 125 100 VDD = 5V 75 50 25 VDD = 15V 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 VDD = 10V tPLH tPHL TRANSITION TIME (tTHL, tTLH) (ns) (Continued) AMBIENT TEMPERATURE (TA) = +25oC 70 60 50 40 30 5V (tTLH) 5V (tTHL) 10V (tTLH) 20 15V (tTLH) 10 10V (tTHL) 15V (tTHL) LOAD CAPACITANCE (CL) (pF) LOAD CAPACITANCE (CL) (pF) FIGURE 6. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE 8 6 4 FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE POWER DISSIPATION (PD) (µW) 2 VDD = 5V VDD = 10V VDD = 15V 10K 8 6 4 2 8 6 4 2 1K CL = 50pF CL = 15pF tr = tf = 20ns 100 8 6 4 2 AMBIENT TEMPERATURE (TA) = +25oC 2 4 68 2 4 68 2 4 68 2 4 68 10 1 10 103 102 FREQUENCY (f) (kHz) 104 FIGURE 8. TYPICAL POWER DISSIPATION AS A FUNCTION OF FREQUENCY Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: BOND PADS: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches 4-7 CD4503BMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-8