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EL7801ALZ-T7

EL7801ALZ-T7

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    VQFN20

  • 描述:

    LED DRIVER

  • 数据手册
  • 价格&库存
EL7801ALZ-T7 数据手册
EL7801 ® Data Sheet PRELIMINARY April 5, 2006 FN7354.1 High Power LED Driver Features The EL7801 is a high-power LED backlight driver with an integrated 36V FET designed to drive up to 8 high-power LEDs in series while running from a 12V input supply. The PWM converter runs from an internally generated 1MHz clock. With efficiencies over 90% the regulator provides tight control of LED current and may be configured in either boost or buck topologies, allowing from 1 to 8 series diodes to be driven from a 12V input. • Drives 1-8 high-power LEDs in series, up to 32V LED light level may be controlled either by: • LED over-temperature protection • 2.7V to 16V input voltage range • Boost or buck configurable switch • 3A integrated FET • Automotive load dump protection • Light output temperature compensation 1. LED DC bias current set via the LEVEL pin, or • LED disconnect 2. External low frequency PWM control via the ENABLE/PWM pin. • PWM/analog light level control In both control modes optional over temperature thermal protection of the LED reduces the LED DC bias current above a customer set temperature, protecting the LED from thermal damage. An optional fault monitor drives an external FET between the input supply and inductor, providing short circuit current protection for the LED and inductor as well as load dump protection for automotive applications. For low cost applications the pass transistor may be omitted and the fault pin bypassed. The EL7801 is packaged in a 20 Ld 4mm x 4mm QFN package and is specified for operation over the -40°C to +105°C temperature range. • Small, 20 Ld 4mm x 4mm QFN package • Pb-free plus anneal available (RoHS compliant) Applications • Display backlighting - Automotive - LCD monitor - Notebook displays • LED accent lighting • Automotive lighting Pinout Ordering Information 20 Ld 4x4 QFN MDP0046 EL7801ALZ-T13 13” 20 Ld 4x4 QFN MDP0046 NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 1 16 VBAT 7” VDC 1 15 ENL 14 MODE VHI 2 THERMAL PAD OVP 3 13 EN/PWM SWD1 4 12 SWS1 SWD2 5 11 SWS2 TMAX 10 EL7801ALZ-T7 17 NC MDP0046 FB 9 20 Ld 4x4 QFN 18 GND - TEMP 8 EL7801ALZ 19 FAULT PKG. DWG. # LEVEL 7 PACKAGE (Pb-free) 20 VIN TAPE & REEL BOOST/BUCKN 6 PART NUMBER (Note) EL7801 (20 LD 4X4 QFN) TOP VIEW CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2006. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. EL7801 Absolute Maximum Ratings (TA = 25°C) Supply Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to VSP +0.3V Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1A Battery Input, VBAT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24V Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C Ambient Operating Temperature . . . . . . . . . . . . . . .-40°C to +105°C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +125°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Specifications PARAMETER VBAT = VIN = 12V, VDC = 5V, IOUT = 350mA, TA = -40°C to +105°C unless otherwise specified. DESCRIPTION CONDITIONS MIN TYP MAX UNIT VIN Input Supply Voltage Normal operating range 2.7 16 V VBAT Input Supply Monitor Normal operating range 2.7 16 V Supply Fault Threshold If VBAT > VBATFAULT, FAULT pin is switched to ground 17.6 20 24.4 V ISEN Supply Current in VIN No switching, EN/PWM = 1 TBD 2 mA ISDIS Supply Current in VIN No switching, EN/PWM = 0 TBD 10 µA RSWITCH Power FET On Resistance ISWITCH = 1.2A 0.15 Ω VDC Regulated Auxiliary Supply VBATFAULT 4.75 5 5.25 V ROUTOL Auxiliary Supply Open Loop Output Resistance VIN < VDC 50 Ω ROUTCL Auxiliary Supply Closed Loop Output Resistance VIN > 6V, F < 100Hz 5 Ω CMIN VDC Filter (Compensation) Capacitor IOUT Output Drive Current 4 LED output string ILIMBOOST Power Switch Current Limit BOOST/BUCKN = VDC 3.6 A ILIMBOOST Power Switch Current Limit BOOST/BUCKN = GND 2.4 A 20 ns 34 V TDELOV 0.1 Over Voltage Positive Going Voltage Mode Threshold Upper threshold to enter overvoltage fault mode OVPL Over Voltage Negative Going Voltage Mode Threshold Lower threshold to exit overvoltage fault mode Switch Driver Supply In buck mode (VHI - VIN), In boost mode (VHI - GND) Feedback Voltage System in regulation, VLEVEL = 1V Light Control Voltage Input Range Mode = 1, analog control of LED current VHIGATE VFB VLEVEL FSW FMOD TSWITCH RLSDRIVER 1000 Transition Delay from Current to Voltage LX fault protection activation Mode OVPH Switching Frequency TBD 17 GND Mode = 1, modulation signal applied to EN/PWM Load Switch Transition Time CGATE = 2nF 1 VDC V V 3 V TBD MHz 10 kHz ns 25 TBD Ω TBD 50 TBD ms Load Switch Driver Impedance Fault Timer Period TDELAY Start-up Delay Timed LX switching delay TBD 1 VGATE External FET Gate Clamp |VFAULT - VIN| TBD 10 Fault Pin Charge Pump VBAT = VIN = 3V 2 V 100 TFAULT VFAULTPUMP mA TBD 0.2 TBD External Light Modulation Frequency µF 6 ms TBD V V FN7354.1 April 5, 2006 EL7801 Electrical Specifications PARAMETER VBAT = VIN = 12V, VDC = 5V, IOUT = 350mA, TA = -40°C to +105°C unless otherwise specified. (Continued) DESCRIPTION CONDITIONS MIN TYP MAX UNIT VDC/3 V VMODEL Mode Pin Input Low Threshold VDC = 5V VMODEH Mode Pin Input Low Threshold VDC = 5V 2x VDC/3 V enFAULT Input Level Applied to TMAX Pin to Enable Fault Protection VDC = 5V 0.94VDC V disFAULT Input Level Applied to TMAX Pin to Disable Fault Protection VDC = 5V 0.96VDC V enTEMP Input Level Applied to TEMP Pin to Enable Temperature Compensation VDC = 5V 0.06VDC V disTEMP Input Level Applied to TEMP Pin to Disable Temperature Compensation VDC = 5V 0.04VDC V TTRIP Internal Temperature Protection Threshold 135 °C THYS Internal Temperature Protection Hysteresis 25 °C VEN/PWML EN/PWM Pin Input Low Threshold VEN/PWMH EN/PWM Pin Input High Threshold 1.2 V 2.5 V . TABLE 1. LIGHT OUTPUT CONTROL, VDC = 5.0V MODE TEMP 1 (VDC - 0.25V) > V > 0.25V Don’t Care V < 0.25V 0 V < (VDC - 0.25V) 3 OPERATING MODE Standard Mode light level to PWM modulation of EN/PWM input; LED bias current determined by LEVEL voltage, nominal 1V Disable temperature compensation Fixed Bias Mode VFB level internally set to 0.4V, independent of VLEVEL FN7354.1 April 5, 2006 EL7801 Typical Application Diagram VBAT VIN VDC 0.1µF VHI FAULT SWD1 VBAT SWD2 VDC TEMP SENSOR OVP BOOST/BUCKN PWM TEMP SWS1 TMAX SWS2 EN/PWM FB MODE ENL LEVEL GND 1V BOOST MODE FIGURE 1. TYPICAL APPLICATION CIRCUIT Pin Descriptions PIN NAME 1 VDC Internally regulated 5V supply, tracks VIN for input voltages less than 5V 2 VHI Power FET gate drive supply 3 OVP Overvoltage monitor input; tie to VOUT for normal operation 4 SWD1 NMOS power FET drain 5 SWD2 NMOS power FET drain 6 DESCRIPTION BOOST/BUCKN Digital input, configures controller to operate in BOOST or BUCK mode, low for BOOST, high for BUCK 7 LEVEL Sets LED bias current level; VFB(nominal) = VLEVEL/5 8 TEMP Temperature reference, tie to GND to disable temperature compensation 9 FB 10 TMAX Maximum LED temperature set point; If TEMP voltage exceeds TMAX, FB set point is reduced 11 SWS2 NMOS power FET source 12 SWS1 NMOS power FET source 13 EN/PWM 14 MODE 15 ENL 16 VBAT 17 N/C Leave floating (internally connected) 18 GND Ground return and FB ground reference 19 FAULT 20 VIN LED current feedback Chip enable, light modulation PWM input Digital Input; tie to GND to set FB reference to 400mV, tie to VDC to control FB reference with LEVEL input LED load isolation switch gate driver Input supply monitor Gate drive of fault FET. Driven low under fault conditions Input supply and FB pin supply reference 4 FN7354.1 April 5, 2006 Functional Block Diagram 2.7V-16V L VBAT FAULT VIN VDC VHI 5 GND START-UP CHARGE PUMP VSTART FAULT CONTROL AND TIMER CLOCK AND RAMP GENERATOR HALT LDO AND REF REF VSTART CLK RAMP OVP SWD2 VDC POR LEVEL (T) INNER LOOP PWM CONTROL AND CURRENT LIMIT EN O/P LEVEL SWS1 FET CURRENT SENSE LIGHT CONTROL SWS2 VDC EN O/P ENL MODE EN/PWM MODE CONTROL BOOST/ BUCKN TEMPERATURE COMPENSATION LOAD CURRENT SENSE FB EL7801 HALT TEMP TMAX FIGURE 2. EL7801 BLOCK DIAGRAM EL7801 REF SWD1 CLK RAMP HALT FN7354.1 April 5, 2006 EL7801 Theory of Operation General Description Switching Regulator The EL7801 employs a current mode PWM control scheme with a nominal switching frequency of 1MHz. This provides fast transient response and enables the use of low profile inductors and compact multilayer ceramic capacitors. Settling time is optimized by the use of a simple control loop without an error amplifier, relying instead on intrinsic gain within the direct summing path. Due to the lower loop gain, offset must be accounted for when setting up initial LED bias current. Refer to the applications section of the datasheet for further information. Figure 2 shows a block diagram of the system. Application Configurations Operating Modes VIN FB Voltage Feedback GND 0.5 LEVEL SHIFT RSENSE The EL7801 is a flexible, highly integrated high-power LED driver consisting of a PWM switching controller and integrated 36V NDMOS power FET. The device can drive up to 8 series high-power LED's at currents up to 1A. The control loop can be configured as either as a boost or buck regulator, providing an output voltage above or below the input supply voltage, depending on the number of stacked LED's. The controller operates from 2.7V to 16V and can be powered by a single lithium ion battery, 5V or 12V regulated supplies or automotive electrical systems. LED current is sensed through a low value resistor in series with the LED. The resistor may be referenced to ground or the input rail, allowing operation with supplies that span the output voltage, for example a lithium ion battery driving one LED. Load current can be adjusted using a thermistor to correct for the reduction in optical efficiency of white LED's with increasing temperature. The thermistor is also used to implement a thermal protection scheme to limit the maximum LED temperature to a preset customer level. + EL7801 VDC /2 FIGURE 3. FB REFERENCE AUTO SWITCH Start-up To maximize external PWM switching speed, the EL7801 doesn't include an internal soft-start circuit. When VDC exceeds the power on reset threshold, switching is delayed for 1ms (TDELAY) allowing the output capacitor to charge through the inductor. If soft-start control is required, a suitable application circuit is shown in Figure 4. VBAT VBAT FAULT EL7801 10µH L1 VOUT VIN COUT C1 4.7nF SWD1 SWD2 20µF R1 FB SWS1 SWS2 R2 2k 100 0.5 RSENSE FIGURE 4. EXTERNAL SOFT-START CIRCUIT The EL7801 can operate as either a buck or boost regulator. Hardwire BUCK/BOOSTN to GND for boost mode or to VDC for buck mode. In buck mode the power NDMOS drive circuit is "floated" (boot-strapped) allowing the NDMOS gate to be driven above VIN to fully enhance the power NDMOS. An internal Schottky diode between VDC (5V) and VHI reduces external component count. Use a ceramic capacitor of at least 50nF between VHI and SWS1/2 to bootstrap VHI. Light Level Control LED Load Connection LED color temperature varies with bias current. In backlighting applications PWM dimming offers better control of color temperature because current through the LED's is kept constant. A 5V gate driver (ENL) synchronized to EN/PWM can be used to control an external FET and disconnect the LED stack during the PWM off period. The switch prevents discharge of the output capacitor by the LED load, maintaining a constant bias independent of PWM duty cycle. Operation at 1kHz PWM rate is shown in Figure 5 and EL7801 includes an auto-sensing FB level shift circuit that enables the LED load to be connected to either GND or VIN. An internal sense circuit monitors the FB pin voltage. When the level exceeds VDC/2, the feedback reference voltage is switched from GND to VIN. Refer to the application section of the datasheet for typical application schematics. 6 Two light control schemes are provided: 1. An external PWM signal via the EN/PWM pin, providing low frequency PWM dimming. 2. Bias current level adjustment via the LEVEL input or fixed internal bias. PWM Dimming FN7354.1 April 5, 2006 EL7801 Figure 6. The load disconnect switch improves PWM dynamic range, linearity and color temperature control. To further improve the linearity of PWM dimming, an internal timer delays system shutdown via EN/PWM for 50ms. The value of VFB should be limited to between 50mV and 450mV for linear operation and is internally limited to 500mV. LEVEL voltages above 2.5V will have no effect on LED current. With MODE tied to GND, voltage across the feedback resistor is set at ~400mV via an internal reference. In either operating mode, if LED temperature control is enabled the value of VFB will be reduced when maximum LED temperature is exceeded. Input Overvoltage For automotive applications, an external high voltage NFET driven by the FAULT pin disconnects the device from the input supply in response to voltage spikes on the input supply. During start-up an internal charge pump drives the FAULT pin above the input voltage, ensuring the NFET is fully enhanced and powering up the device. In normal operation the switching node of the boost regulator or the floating supply of the buck regulator is used to pump FAULT above VIN. On detection of an overvoltage, the FAULT pin is discharged to GND. The gate to source voltage of the NDMOS is internally limited to ±10V to prevent voltage stress. FIGURE 5. OPERATION WITH ENL Fault Protection The external NFET is also used as a fault protection switch, disconnecting the input supply if a fault occurs for more than 50ms. The system monitors feedback voltage regulation, output overvoltage and input overvoltage. For applications not requiring input voltage or fault protection, connect VBAT and VIN directly together. All faults except input supply overvoltage latch the EL7801 into an off state that can be cleared by either power cycling the input supply or the EN/PWM pin. Connecting the TMAX pin to VDC disables the fault latch function (LED over temperature control is also disabled). Output Overvoltage Protection (OVP) FIGURE 6. OPERATION WITH NO ENL Bias Current Dimming Current in the LED load is determined by the value of the feedback resistor and the target feedback regulation voltage: V FB I LED = ----------------------R SENSE With MODE tied to VDC, voltage across the feedback resistor is set by VLEVEL: If the FB pin is shorted to ground or an LED fails open circuit, output voltage in BOOST mode can increase to potentially damaging voltages. An optional overvoltage protection circuit can be enabled by connection of the OVP pin to the output voltage. The device will stop switching if the output voltage exceeds OVPH and re-start when the output voltage falls below OVPL. During sustained OVP fault conditions, VOUT will saw-tooth between the upper and lower threshold voltages at a frequency determined by the magnitude of current available to discharge the output capacitor and the value of output capacitor used. The OVP threshold can be set to a lower value by using an external zener diode and resistor, as shown in Figure 7. R1 should be adjusted to minimize offset in the FB voltage due to FB pin input current. A value of 100Ω is recommended. V LEVEL V FB = --------------------5 7 FN7354.1 April 5, 2006 EL7801 10µH L1 0.47uF VOUT VIN EL7801 VIN COUT SWD1 SWD2 VDC EL7801 LDO 20µF ZOVP FB SWS1 SWS2 Thermistor Close to LED's CREG RT R1 100K 0.5 VBAT FAULT RSENSE VBAT + 100 0.5 RSENSE + - - + RT 100K TEMP - RT 10K GND Temp Compensation FIGURE 7. EXTERNAL OVP CIRCUIT Over Temperature Shutdown FIGURE 9. TEMPERATURE COMPENSATION CIRCUIT An internal sense circuit disables PWM switching if the die temperature exceeds 135°C. Switching is re-enabled when the temperature falls below 100°C. Internal 5V LDO An internal LDO between VIN and VDC regulates VDC to 5V, to power control and gate drive circuits when VIN exceeds 5.1V. In normal operation decouple VDC with at least 0.47µF. In applications where the input supply is less than 5.5V, VDC should be tied directly to VIN. Temperature Compensation 140 120 110 100 40 90 70 60 50 -20 30% 30 80 0 20 40 60 80 100 120 JUNCTION TEMPERATURE, TJ (°C) FIGURE 8. HIGH POWER WHITE LED LIGHT OUTPUT VARIATION WITH JUNCTION TEMPERATURE EL7801 incorporates a supply referenced temperature interface to increase LED load current with temperature. Disable the function by connecting the TEMP pin to GND. 8 % BIAS VARIATION RELATIVE LIGHT OUTPUT (%) At a constant current, high power white LED light intensity reduces as junction temperature increases. In use, connect a potential divider comprised of an NTC thermistor and low temperature coefficient resistor between VDC and GND. Locate the thermistor physically close to the LED load for accurate temperature sensing. Connect the tap point of the divider to the TEMP pin. Temperature changes vary the VDC divider ratio and adjust the voltage present at VTEMP, providing up to ±30% adjustment in FB bias level. A 10K resistor and Murata NCP18XH103f03RB thermistor will set VTEMP at VDC/2 at room temperature. Different thermistor and resistor values may be used to tailor the system temperature coefficient for specific LED families. Alternatively, temperature coefficient can be fine tuned by inserting limit resistors in series and parallel with the thermistor to bound impedance variation with temperature. For the LED temperature variation shown in Figure 8, a suitable arrangement is shown in Figure 11. 20 10 0 -10 -20 -30 -30% -40 0 0.2 0.4 0.6 0.8 1.0 VTEMP/VDC FIGURE 10. FB VOLTAGE VARIATION WITH VTEMP/VDC RATIO FN7354.1 April 5, 2006 EL7801 input supply, improving system stability. The high switching frequency of the loop causes almost all ripple current to flow in the input capacitor, which must be rated accordingly. VDC Considerably more input current ripple is generated in buck mode than boost mode. In buck mode input current is alternately switched between IOUT and zero. The rms current flow in the input capacitor is given by: MURATA NCP18XH103F03RB R1 R2 23k 300 2 I CAPRMS = I OUT • ( D – D ) TEMP Where: D = Duty Cycle R3 4k The input current is maximum for D = 0.5 and when IOUT approaches current limit (2.4A) giving a value of around 1.2A. A capacitor with low internal series resistance should be chosen to minimize heating effects and improve system efficiency, such as X5R or X7R ceramic capacitors, which offer small size and a lower value of temperature and voltage coefficient compared to other ceramic caps. FIGURE 11. THERMISTOR VOLTAGE COEFFICIENT ADJUSTMENT LED Temperature Control LED lifetime reduces dramatically with elevated temperature. An over temperature control circuit utilizing the thermistor voltage at TEMP reduces the LED bias current when VTEMP exceeds the threshold voltage on TMAX. To minimize noise injection use a potential divider between VDC and GND to set the voltage on TMAX, as shown in Figure 12. The value of TMAX for a specific threshold temperature is determined by the choice of thermistor temperature coefficient. Disable the function by connecting the TMAX pin to GND. VIN VDC RM1 RSENSE 20k LDO TMAX RM2 80k + FB Level Adjust Current TEMP Temp Compensation RT 10K GND EL7801 FIGURE 12. OVER-TEMPERATURE CIRCUIT Component Selection Input Capacitor Switching regulators require input capacitors to deliver peak charging current and to reduce the impedance of the input supply. This reduces interaction between the regulator and 9 In automotive applications the input capacitor can be protected from exposure to high voltages present during fault conditions (load dump) by connecting it downstream of the fault protection switch, as shown in Figures 19 and 20. Inductor Thermistor Close to LED's CREG 0.5 0.47uF In boost mode input current flows continuously into the inductor, with an AC ripple component proportional to the rate of inductor charging only and smaller value input capacitors may be used. It is recommended that an input capacitor of at least 10µF be used. Ensure the voltage rating of the input capacitor is suitable to handle the full supply range. Careful selection of inductor value will optimise circuit operation. Inductor type and value influence many key parameters, including ripple current, current limit, efficiency, transient performance and stability. Internal slope compensation has been optimised for inductor values between 4.7µH and 10µH. Ensure the inductor current rating is capable of handling the current limit value in the configuration used (2.4A for buck, 3.5A for boost). If an inductor core is chosen with too low a current rating, saturation in the core will cause the effective inductor value to fall, leading to an increase in peak to average current level, poor efficiency and overheating in the core. Rectifier Diode A high speed rectifier diode is necessary to prevent excessive voltage overshoot, especially in the boost configuration. Low forward voltage and reverse leakage current will minimize losses, making Schottky diodes the preferred choice. Similarly to the inductor, a diode with a suitable current rating to handle current limit in the configuration must be used. FN7354.1 April 5, 2006 EL7801 Output Capacitor where The output capacitor acts to smooth the output voltage and in the boost configuration supplies load current directly during the conduction phase of the power switch. Ripple voltage consists of two components, the first due to charging and discharging of the capacitor; the second due to IR drop across the ESR of the capacitor by inductor ripple current. V OUT D = --------------V IN For a low ESR ceramic capacitor, output ripple is dominated by the charging and discharging of the output capacitor. Care should be taken to ensure the voltage rating of the capacitor exceeds the maximum output voltage. In boost mode: Compensation IO D V RIPPLE = ---------------- × ------- + I LPK × ESR C OUT F S The EL7801 employs a direct summing control loop with current feedback. No error amplifier is used in the system. The arrangement provides fast transient response and makes use of the output capacitor to compensate the loop. The effect of the pole associated with the inductor is minimized by the current feedback. The number of LEDs, their DC bias current and the value of feedback resistor alter loop stability due to their effect on feedback factor which is heavily influenced by the small signal impedance of the LEDs. Generally, higher numbers of LEDs, lower bias levels and smaller values of feedback resistor will require smaller output capacitors to achieve loop stability. A combination of low ESR electrolytic and ceramic capacitors may be used to reduce implementation costs. where: V OUT – V IN D = ------------------------------V OUT and IO ( V OUT – V IN ) ( 1 – D ) × ------------------ + -----------------------------------I LPK = -----------fs 2×L 1–D In buck mode: ( V IN – V OUT ) × D D V RIPPLE = ----------------------------------------------- ×  -------------------------- + ESR f × C  2 × fs × L s OUT TABLE 2. BOOST MODE COMPENSATION. 2.7V OPERATION VOUT (V) 7 10.5 14 17.5 21 24.5 28 4 5 6 7 8 DMAX DMAX VFB IOUT LED’s 2 3 50mV 50mA Electrolytic 94µF 47µF Ceramic 40µF 20µF 40µF 20µF 20µF Electrolytic 94µF Ceramic 60µF 60µF 40µF 40µF 40µF Electrolytic 94µF 47µF 47µF 47µF ILIM ILIM ILIM Ceramic 60µF 40µF 40µF 40µF Electrolytic ILIM ILIM ILIM ILIM ILIM ILIM ILIM 100mV 200mV 200mV 100mA 350mA 1A Ceramic TABLE 3. BOOST MODE COMPENSATION. 5V OPERATION VOUT (V) 7 10.5 14 17.5 21 24.5 28 4 5 6 7 8 40µF 20µF 20µF 20µF 20µF 40µF 40µF 40µF 40µF VFB IOUT LED’s 2 3 50mV 50mA Electrolytic 94µF 47µF Ceramic 40µF 20µF Electrolytic 141µF 47µF Ceramic 60µF 60µF 60µF Electrolytic 141µF 47µF 47µF Ceramic 60µF 60µF 40µF 60µF 40µF 40µF 40µF Electrolytic 94µF 47µF ILIM ILIM ILIM ILIM ILIM Ceramic 40µF 40µF 100mV 200mV 200mV 100mA 350mA 1A 10 FN7354.1 April 5, 2006 EL7801 TABLE 4. BOOST MODE COMPENSATION. 12V OPERATION. VOUT (V) 7 10.5 14 17.5 21 24.5 28 2 3 4 5 6 7 8 DMIN DMIN DMIN 60µF 40µF 40µF 40µF 47µF 47µF 40µF 20µF 40µF 40µF 47µF 47µF 40µF 20µF 40µF 40µF 47µF 47µF 20µF 20µF 40µF 40µF VFB IOUT LED’s 50mV 50mA Electrolytic Ceramic 100mV 100mA Electrolytic Ceramic 200mV 350mA 1A DMIN DMIN DMIN DMIN Electrolytic Ceramic DMIN A Note about Ceramic Capacitors: Many ceramic capacitors have strong voltage and temperature coefficients which reduces effective capacitance as the applied voltage or operating temperature is increased. Pay careful attention when selecting ceramic capacitor type. X5R and X7R families provide much better stability than Y5V, which should generally be avoided unless additional capacitance is added to compensate for the significant changes in value which occurs over voltage and temperature. TABLE 5. CERAMIC CAPACITOR VARIABILITY CAPACITOR TYPE DMIN Electrolytic Ceramic 200mV DMIN TYPICAL VOLTAGE VARIATION TEMPERATURE VARIATION DMIN DMIN • Place several via holes (thermal vias) under the chip to a backside ground plane to improve heat dissipation • Maximize the copper area around the thermal vias to spread heat away from the chip. The demo board is a good example of layout based on this outline. Please refer to the EL7801 Application Brief for more detailed information. Cost-Sensitive Applications For cost-sensitive applications, the BOM can be reduced considerably by: 1. Removing temperature compensation 2. Removing the fault-protection switch X7R, 10V -30% at 10V -15% at 125°C 3. Removing the load isolation switch X5R, 25V -50% at 25V -9% at 85°C Y5V, 6.3V -90% at 6.3V -65% at 85°C 4. Switching the FB into internal fixed bias mode (400mV across VFB) Layout Considerations PCB layout is very important for the converter to function properly. The following general guidelines should be followed: In this configuration, light level may be controlled using the EN/PWM input to chop the output current. In the absence of the load isolation switch, LED bias current will vary with PWM duty cycle, due to the discharge of the output capacitor by the LED’s during the PWM off time. • Separate the Power Ground and Signal Ground; connect them only at one point close to the GND pin • Place the input capacitor close to VIN and SWS1,2 pins in boost mode • Make the following PC traces as short as possible: - from SWD1,2 to the inductor in boost mode - from SWS1,2 to the inductor in buck mode - from Cout to PGND • Feedback signals levels are small to improve efficiency. Ensure the reference connection (GND or VIN) between the sense resistor and IC pin doesn't carry switching current. 11 FN7354.1 April 5, 2006 EL7801 Typical Boost Application Diagram VBAT VIN FAULT SWD1 VBAT SWD2 VDC TEMP SENSOR EN VLEVEL (0V TO 2.5V) VHI OVP TEMP SWS1 TMAX SWS2 EN/PWM ENL MODE FB LEVEL GND BUCK/BOOSTN Minimum BOM Boost Application Diagram VBAT VIN FAULT SWD1 VBAT SWD2 VDC EN VHI OVP TEMP SWS1 TMAX SWS2 EN/PWM ENL MODE FB LEVEL GND BUCK/BOOSTN 12 FN7354.1 April 5, 2006 EL7801 Typical Boost Application Diagram - Supply-Return Load VBAT VHI VIN FAULT SWD1 VBAT SWD2 VDC TEMP SENSOR EN VLEVEL (0V TO 2.5V) OVP TEMP SWS1 TMAX SWS2 EN/PWM ENL MODE FB LEVEL GND BUCK/BOOSTN Minimum BOM Boost Application Diagram - Supply-Return Load VBAT VIN FAULT SWD1 VBAT SWD2 VDC EN VHI OVP TEMP SWS1 TMAX SWS2 EN/PWM ENL MODE FB LEVEL GND BUCK/BOOSTN 13 FN7354.1 April 5, 2006 EL7801 Typical Buck Application Diagram VBAT VIN FAULT SWD1 VBAT SWD2 VDC TEMP SENSOR EN VLEVEL (0V TO 2.5V) VHI OVP TEMP SWS1 TMAX SWS2 EN/PWM ENL MODE FB LEVEL GND BUCK/BOOSTN Minimum BOM Buck Application Diagram VBAT VIN FAULT SWD1 VBAT SWD2 VDC EN VHI OVP TEMP SWS1 TMAX SWS2 EN/PWM ENL MODE FB LEVEL GND BUCK/BOOSTN 14 FN7354.1 April 5, 2006 EL7801 Automotive Applications The protection circuit is applicable to buck, boost, and supply-return load applications. The LED load and EL7801 may be protected against load dumps and other electrical faults in automotive supplies with a minor addition to the standard application schematic: A small reduction in efficiency is caused by the drop in the power schottky. • A reverse transient automotive-rated protection power schottky must be added in series with the input supply Unless alternative transient protection is provided, minimum BOM automotive applications must include the circuit changes noted above. • A 500Ω current limit resistor must be inserted in series with the VBAT pin • The fault protection NFET must be specified to handle 100V VDS conditions. Automotive Boost Application Diagram VBAT RLIM VHI VIN 500 FAULT SWD1 VBAT SWD2 VDC TEMP SENSOR OVP TEMP SWS1 TMAX SWS2 EN/PWM EN VLEVEL (0V TO 2.5V) ENL MODE FB LEVEL GND BUCK/BOOSTN Automotive Minimum BOM Boost Application Diagram VBAT VIN FAULT SWD1 VBAT SWD2 VDC EN VLEVEL (0V TO 2.5V) VHI OVP TEMP SWS1 TMAX SWS2 EN/PWM ENL MODE FB LEVEL GND BUCK/BOOSTN 15 FN7354.1 April 5, 2006 EL7801 QFN Package Outline Drawing NOTE: The package drawing shown here may not be the latest version. To check the latest revision, please refer to the Intersil website at http://www.intersil.com/design/packages/index.asp All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 16 FN7354.1 April 5, 2006
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