FRF254D

FRF254D, FRF254R, FRF254H June 1998 17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-254AA Features • 17A, 250V, RDS(on) = 0.185Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 15.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 • Gamma Dot • Photo Current • Neutron Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet. CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. Symbol Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified FRF254D, R, H 250 250 17 11 51 ±20 125 50 1.00 51 17 51 -55 to +150 300 UNITS V V A A A V W W W/oC A A A oC oC Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 File Number 3232.1 4-1 FRF254D, FRF254R, FRF254H Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current Rated Avalanche Current Drain-Source On-State Volts Drain-Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate-Charge Threshold Gate-Charge On State Gate-Charge Total Plateau Voltage Gate-Charge Source Gate-Charge Drain Diode Forward Voltage Reverse Recovery Time Junction-To-Case Junction-To-Ambient SYMBOL BVDSS VGS(th) IGSSF IGSSR IDSS1 IDSS2 IDSS3 IAR VDS(on) RDS(on) td(on) tr td(off) tf QG(th) QG(on) QGM VGP QGS QGD VSD TT Rθjc Rθja Free Air Operation ID = 17A, VGD = 0 I = 17A; di/dt = 100A/µs VDD = 125V, ID = 17A IGS1 = IGS2 0 ≤ VGS ≤ 20 TEST CONDITIONS VGS = 0, ID = 1mA VDS = VGS, ID = 1mA VGS = +20V VGS = -20V VDS = 250V, VGS = 0 VDS = 200V, VGS = 0 VDS = 200V, VGS = 0, TC = +125oC Time = 20µs VGS = 10V, ID = 17A VGS = 10V, ID = 11A VDD = 125V, ID = 17A Pulse Width = 3µs Period = 300µs, Rg = 25Ω 0 ≤ VGS ≤ 10 (See Test Circuit) MIN 250 2.0 4 66 125 3 12 31 0.6 MAX 4.0 100 100 1 0.025 0.25 51 3.30 0.185 114 162 ns 990 256 18 264 500 12 48 nc 124 1.8 2000 1.0 48 V ns oC/W UNITS V V nA nA mA A V Ω nc V ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDD L RL VDS VGS = 12V DUT 0V RGS 0V tP + CURRENT I TRANSFORMER AS VDS - VARY tP TO OBTAIN REQUIRED PEAK IAS VGS ≤ 20V 50Ω + VDD DUT 50Ω 50V-150V FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT 4-2 FRF254D, FRF254R, FRF254H Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts (Note 4, 6) (Note 5, 6) Gate-Source Threshold Volts (Note 4, 6) (Note 3, 5, 6) Gate-Body Leakage Forward (Note 4, 6) (Note 5, 6) Gate-Body Leakage Reverse (Note 2, 4, 6) (Note 2, 5, 6) Zero-Gate Voltage Drain Current (Note 4, 6) (Note 5, 6) Drain-Source On-State Volts (Note 1, 4, 6) (Note 1, 5, 6) Drain-Source On Resistance (Note 1, 4, 6) (Note 1, 5, 6) NOTES: 1. Pulse test, 300µs max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13 5. Gamma = 1000KRAD(Si). Neutron = 1E13 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 11/1/89 on TA 17653 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988 SYMBOL BVDSS BVDSS VGS(th) VGS(th) IGSSF IGSSF IGSSR IGSSR IDSS IDSS VDS(on) VDS(on) RDS(on) RDS(on) TYPE FRF254D, R FRF254H FRF254D, R FRF254H FRF254D, R FRF254H FRF254D, R FRF254H FRF254D, R FRF254H FRF254D, R FRF254H FRF254D, R FRF254H TEST CONDITIONS VGS = 0, ID = 1mA VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0 VGS = 20V, VDS = 0 VGS = -20V, VDS = 0 VGS = -20V, VDS = 0 VGS = 0, VDS = 200V VGS = 0, VDS = 200V VGS = 10V, ID = 17A VGS = 16V, ID = 17A VGS = 10V, ID = 11A VGS = 14V, ID = 11A MIN 250 238 2.0 1.5 MAX 4.0 4.5 100 200 100 200 25 100 3.30 4.18 0.185 0.234 UNITS V V V V nA nA nA nA µA µA V V Ω Ω 4-3 FRF254D, FRF254R, FRF254H Typical Performance Characteristics 4-4 FRF254D, FRF254R, FRF254H Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A E. Group B F. Group C G. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A E. Group B - Attributes Data Sheet - Group A Lot Traveler - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data G. Group B F. Group C H. Group C G. Group D I. Group D Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report 4-5 FRF254D, FRF254R, FRF254H TO-254AA 3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE A E ØP A1 INCHES SYMBOL A MIN 0.249 0.040 0.035 0.790 0.535 MAX 0.260 0.050 0.045 0.800 0.545 MILLIMETERS MIN 6.33 1.02 0.89 20.07 13.59 MAX 6.60 1.27 1.14 20.32 13.84 NOTES 2, 3 4 4 4 - Q H1 A1 Øb D D E e e1 H1 J1 0.065 R MAX. TYP. 0.150 TYP 0.300 BSC 0.245 0.140 0.520 0.139 0.110 0.265 0.160 0.560 0.149 0.130 3.81 TYP 7.62 BSC 6.23 3.56 13.21 3.54 2.80 6.73 4.06 14.22 3.78 3.30 L ØP Q L Øb 1 2 3 J1 e e1 NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC outline TO-254AA dated 11-86. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. WARNING! BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-6