FSYC360R

FSYC360D, FSYC360R Data Sheet February 2000 File Number 4791 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil Corporation for any desired deviations from the data sheet. Features • 21A, 400V, rDS(ON) = 0.210Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 35nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2 - Usable to 3E13 Neutrons/cm2 Symbol D G S Packaging Ordering Information RAD LEVEL 10K 100K 100K SCREENING LEVEL Commercial TXV Space PART NUMBER/BRAND FSYC360D1 FSYC360R3 FSYC360R4 SMD2 Formerly available as type TA45206. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 FSYC360D, FSYC360R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSYC360D, FSYC360R Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 400 400 21 13 63 ±20 208 83 1.67 63 21 63 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 400 1.5 0.5 TC = 25oC TC = 125oC VGS = 0V to 20V VGS = 0V to 12V VGS = 0V to 2V VDD = 200V, ID = 21A ID = 21A, VDS = 15V TYP 0.190 160 26 82 7 MAX 5.0 4.0 25 250 100 200 4.85 0.210 0.410 45 45 120 25 280 180 9 30 92 UNITS V V V V µA µA nA nA V Ω Ω ns ns ns ns nC nC nC nC nC V Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current IDSS VDS = 320V, VGS = 0V VGS = ±20V Gate to Source Leakage Current IGSS Drain to Source On-State Voltage Drain to Source On Resistance VDS(ON) rDS(ON)12 VGS = 12V, ID = 21A ID = 13A, VGS = 12V Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage td(ON) tr td(OFF) tf Qg(TOT) Qg(12) Qg(TH) Qgs Qgd V(PLATEAU) VDD = 200V, ID = 21A, RL = 9.5Ω, VGS = 12V, RGS = 2.35Ω 2 FSYC360D, FSYC360R Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS RθJC TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz MIN TYP 4100 520 160 MAX 0.6 UNITS pF pF pF oC/W Source to Drain Diode Specifications PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr ISD = 21A ISD = 21A, dISD/dt = 100A/µs TC = 25oC, Unless Otherwise Specified SYMBOL (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = ±20V, VDS = 0V VGS = 0, VDS = 320V VGS = 12V, ID = 21A VGS = 12V, ID = 13A MIN 400 1.5 MAX 4.0 100 25 4.85 0.210 UNITS V V nA µA V Ω TEST CONDITIONS MIN 0.6 TYP MAX 1.8 1100 UNITS V ns Electrical Specifications up to 100K RAD PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area SYMBOL SEESOA ION SPECIES Ni Ni Br Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26 37 37 37 37 TYPICAL RANGE (µ) 43 43 36 36 36 36 APPLIED VGS BIAS (V) -15 -20 -5 -10 -15 -20 (NOTE 6) MAXIMUM VDS BIAS (V) 400 360 400 320 200 80 3 FSYC360D, FSYC360R Performance Curves 500 Unless Otherwise Specified 1E-3 LIMITING INDUCTANCE (HENRY) LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ FLUENCE = 1E5 IONS/cm2 (TYPICAL) 400 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 VDS (V) 300 200 100 TEMP = 25oC 0 0 -5 -10 VGS (V) -15 -20 -25 1E-7 10 30 100 DRAIN SUPPLY (V) 300 1000 FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS 26 100 20 ID , DRAIN (A) ID , DRAIN CURRENT (A) TC = 25oC 10 100µs 1ms 10 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 10 100 10ms 0 -50 0 50 100 TC , CASE TEMPERATURE (oC) 150 0.1 1000 VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250µs, VGS = 12V, ID = 13A NORMALIZED rDS(ON) 12V QG 2.0 1.5 QGS VG QGD 1.0 0.5 0.0 -80 CHARGE -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 4 FSYC360D, FSYC360R Performance Curves 10 THERMAL RESPONSE (ZθJC) Unless Otherwise Specified (Continued) 1 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 t1 t2 NORMALIZED 0.1 PDM 0.001 10-5 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 100 IAS , AVALANCHE CURRENT (A) STARTING TJ = 25oC 10 STARTING TJ = 150oC IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 1 0.01 FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L + CURRENT I TRANSFORMER AS BVDSS tP IAS 50Ω + VDD VDS VDD - VARY tP TO OBTAIN REQUIRED PEAK IAS VGS ≤ 20V DUT 50V-150V 50Ω tAV 0V tP FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS 5 FSYC360D, FSYC360R Test Circuits and Waveforms (Continued) VDD tON td(ON) RL VDS VGS = 12V DUT 0V RGS VGS 10% 50% PULSE WIDTH 90% 50% 10% 10% VDS 90% tr tOFF td(OFF) tf 90% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source On Resistance Gate Threshold Voltage NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = ±20V VDS = 80% Rated Value TC = 25oC at Rated ID ID = 1.0mA MAX ±20 (Note 7) ±25 (Note 7) ±20% (Note 8) ±20% (Note 8) UNITS nA µA Ω V Screening Information TEST Unclamped Inductive Switching Thermal Response Gate Stress Pind Pre Burn-In Tests (Note 9) Steady State Gate Bias (Gate Stress) Interim Electrical Tests (Note 9) Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. JANTXV EQUIVALENT VGS(PEAK) = 15V, L = 0.1mH, Limit = 63A tH = 10ms; VH = 25V; IH = 4A; Limit = 55mV VGS = 30V, t = 250µs Optional MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours 10% MIL-S-19500, Group A, Subgroup 2 JANS EQUIVALENT VGS(PEAK) = 15V, L = 0.1mH, Limit = 63A tH = 10ms; VH = 25V; IH = 4A; Limit = 55mV VGS = 30V, t = 250µs Required MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-S-19500, Group A, Subgroups 2 and 3 6 FSYC360D, FSYC360R Additional Tests PARAMETER Safe Operating Area Thermal Impedance SYMBOL SOA ∆VSD TEST CONDITIONS VDS = 200V, t = 10ms tH = 500ms; VH = 20V; IH = 4A HEAT SINK REQUIRED MAX 1.7 115 UNITS A mV Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A E. Group B F. Group C G. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet Class S - Equivalents 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A E. Group B - Attributes Data Sheet - Group A Lot Traveler - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data 2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data F. Group C G. Group D G. Group B H. Group C I. Group D 7 FSYC360D, FSYC360R SMD2 3 PAD CERAMIC LEADLESS CHIP CARRIER E INCHES SYMBOL A b D MIN 0.129 0.135 0.520 0.435 0.115 0.685 0.470 0.152 MAX 0.139 0.145 0.530 0.445 0.125 0.695 0.480 0.162 MILLIMETERS MIN 3.27 3.43 13.20 11.05 2.92 17.40 11.94 3.86 MAX 3.53 3.68 13.46 11.30 3.17 17.65 12.19 4.11 NOTES - D D1 D2 E E1 E2 NOTES: A 1. No current JEDEC outline for this package. 2. Controlling dimension: INCH. 3. Revision 2 dated 6-98. E1 E2 2 3 D2 D1 1 b 1 - GATE 2 - SOURCE 3 - DRAIN All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 8