FSYC9160D

FSYC9160D, FSYC9160R July 1998 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the Vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. Features • 47A, -100V, rDS(ON) = 0.053Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 10.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV Commercial TXV Space PART NUMBER/BRAND FSYC9160D1 FSYC9160D3 FSYC9160R1 FSYC9160R3 FSYC9160R4 Symbol D Formerly available as type TA17766. G S Packaging SMD-2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 File Number 4552 1 FSYC9160D, FSYC9160R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSYC9160D, FSYC9160R -100 -100 47 30 141 ±20 208 83 1.67 141 47 141 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL (Distance >0.063in (1.6mm) from Case, 10s Max) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN -100 -2.0 -1.0 VGS = 0V to -20V VGS = 0V to -12V VGS = 0V to -2V VDD = -50V, ID = 47A ID = 47A, VDS = -15V VDS = -25V, VGS = 0V, f = 1MHz TYP 0.034 220 48 85 -7 5600 1550 560 MAX -7.0 -6.0 25 250 100 200 -2.74 0.053 0.083 50 75 100 50 410 250 17 66 120 0.6 UNITS V V V V µA µA nA nA V Ω Ω ns ns ns ns nC nC nC nC nC V pF pF pF oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current IDSS VDS = -80V, VGS = 0V VGS = ±20V Gate to Source Leakage Current IGSS Drain to Source On-State Voltage Drain to Source On Resistance VDS(ON) rDS(ON)12 VGS = -12V, ID = 47A ID = 30A, VGS = -12V Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case td(ON) tr td(OFF) tf Qg(TOT) Qg(12) Qg(TH) Qgs Qgd V(PLATEAU) CISS COSS CRSS RθJC VDD = -50V, ID = 47A, RL = 1.1Ω, VGS = -12V, RGS = 2.35Ω 2 FSYC9160D, FSYC9160R Source to Drain Diode Specifications PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 47A ISD = 47A, dISD/dt = 100A/µs MIN -0.6 TYP MAX -1.8 200 UNITS V ns Electrical Specifications up to 100K RAD PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = ±20V, VDS = 0V VGS = 0, VDS = -80V VGS = -12V, ID = 47A VGS = -12V, ID = 30A MIN -100 -2.0 MAX -6.0 100 25 -2.74 0.053 UNITS V V nA µA V Ω 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE (µ) 43 36 36 36 APPLIED VGS BIAS (V) 20 10 15 20 (NOTE 6) MAXIMUM VDS BIAS (V) -100 -100 -80 -50 TEST Single Event Effects Safe Operating Area SYMBOL SEESOA Typical Performance Curves Unless Otherwise Specified FLUENCE = 1E5 IONS/cm2 (TYPICAL) -100 -80 VDS (V) -60 -40 -20 TEMP = 25oC 0 0 5 10 VGS (V) 15 20 25 LIMITING INDUCTANCE (HENRY) -120 LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ 1E-3 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 1E-7 -10 -30 -100 DRAIN SUPPLY (V) -300 -1000 FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS 3 FSYC9160D, FSYC9160R Typical Performance Curves 60 Unless Otherwise Specified (Continued) 500 TC = 25oC ID , DRAIN CURRENT (A) 100 100µs ID , DRAIN (A) 40 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 -1 1ms 20 10ms 0 -50 0 50 100 150 -10 -100 -300 TC , CASE TEMPERATURE (oC) VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms, VGS = -12V, ID = 30A NORMALIZED rDS(ON) -12V QG 2.0 1.5 QGS VG QGD 1.0 0.5 CHARGE BASIC GATE CHARGE WAVEFORM 0.0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 10 THERMAL RESPONSE (ZθJC) 1 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 100 t1 t2 101 NORMALIZED 0.1 PDM 0.001 10-5 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 4 FSYC9160D, FSYC9160R Typical Performance Curves 300 IAS , AVALANCHE CURRENT (A) Unless Otherwise Specified (Continued) 100 STARTING TJ = 25oC STARTING TJ = 150oC 10 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L + CURRENT I TRANSFORMER AS VARY tP TO OBTAIN REQUIRED PEAK IAS 0V tP 50Ω VGS ≤ 20V tAV + VDD 50V-150V tP IAS BVDSS VDS VDD 50Ω DUT FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS VDD tON td(ON) tOFF td(OFF) tr tf 90% RL VDS 0V DUT VDS 90% 10% 10% VGS = -12V 90% RGS VGS 10% 50% PULSE WIDTH 50% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5 FSYC9160D, FSYC9160R Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source On Resistance Gate Threshold Voltage NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = ±20V VDS = 80% Rated Value TC = 25oC at Rated ID ID = 1.0mA MAX ±20 (Note 7) ±25 (Note 7) ±20% (Note 8) ±20% (Note 8) UNITS nA µA Ω V Screening Information TEST Gate Stress Pind Pre Burn-In Tests (Note 9) JANTXV EQUIVALENT VGS = -30V, t = 250µs Optional MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours 10% MIL-S-19500, Group A, Subgroup 2 JANS EQUIVALENT VGS = -30V, t = 250µs Required MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-S-19500, Group A, Subgroups 2 and 3 Steady State Gate Bias (Gate Stress) Interim Electrical Tests (Note 9) Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance SYMBOL SOA IAS ∆VSD ∆VSD TEST CONDITIONS VDS = -80V, t = 10ms VGS(PEAK) = -15V, L = 0.1mH tH = 10ms; VH = -25V; IH = 4A tH = 500ms; VH = -20V; IH = 4A (HEATSINK REQUIRED) MAX 5.5 141 55 115 UNITS A A mV mV 6 FSYC9160D, FSYC9160R Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A E. Group B F. Group C G. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A E. Group B - Attributes Data Sheet - Group A Lot Traveler - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data G. Group B F. Group C H. Group C G. Group D I. Group D Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report 7 FSYC9160D, FSYC9160R SMD-2 3 PAD CERAMIC LEADLESS CHIP CARRIER INCHES E MILLIMETERS MIN 3.27 3.43 13.20 11.05 2.92 17.40 11.94 3.86 MAX 3.53 3.68 13.46 11.30 3.17 17.65 12.19 4.11 NOTES - SYMBOL A b D MIN 0.129 0.135 0.520 0.435 0.115 0.685 0.470 0.152 MAX 0.139 0.145 0.530 0.445 0.125 0.695 0.480 0.162 D D1 D2 E E1 E2 NOTES: A 1. No current JEDEC outline for this package. 2. Controlling dimension: INCH. 3. Revision 2 dated 6-98. E2 E1 2 3 D2 D1 1 b 1 - GATE 2 - SOURCE 3 - DRAIN All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 8