H51275

® HA-5127, HA-5127A Data Sheet July 27, 2005 FN2906.6 8.5MHz, Ultra-Low Noise Precision Operational Amplifier The HA-5127 monolithic operational amplifier features an unparalleled combination of precision DC and wideband high speed characteristics. Utilizing the Intersil D. I. technology and advanced processing techniques, this unique design unites low noise (3nV/√Hz) precision instrumentation performance with high speed (10V/µs) wideband capability. This amplifier’s impressive list of features include low VOS (10µV), wide unity gain-bandwidth (8.5MHz), high open loop gain (1800V/mV), and high CMRR (126dB). Additionally, this flexible device operates over a wide supply range (±5V to ±15V) while consuming only 140mW of power. Using the HA-5127 allows designers to minimize errors while maximizing speed and bandwidth. This device is ideally suited for low level transducer signal amplifier circuits. Other applications which can utilize the HA-5127’s qualities include instrumentation amplifiers, pulse amplifiers, audio preamplifiers, and signal conditioning circuits. This device can easily be used as a design enhancement by directly replacing the 725, OP25, OP06, OP07, OP27 and OP37. For the military grade product, refer to the HA-5127/883 data sheet. Features • Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/µs • Unity Gain Bandwidth. . . . . . . . . . . . . . . . . . . . . . 8.5MHz • Low Noise . . . . . . . . . . . . . . . . . . . . . . . 3nV/√Hz at 1kHz • Low VOS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µV • High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126dB • High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800V/mV • Pb-Free Plus Anneal Available (RoHS Compliant) Applications • High Speed Signal Conditioners • Wide Bandwidth Instrumentation Amplifiers • Low Level Transducer Amplifiers • Fast, Low Level Voltage Comparators • Highest Quality Audio Preamplifiers • Pulse/RF Amplifiers Ordering Information PART NUMBER (BRAND) HA7-5127A-5 TEMP. RANGE (oC) 0 to 75 0 to 75 0 to 75 PACKAGE 8 Ld CERDIP 8 Ld SOIC 8 Ld SOIC (Pb-free) PKG. DWG. # F8.3A M8.15 M8.15 M8.15 Pinout HA-5127 (CERDIP, SOIC) TOP VIEW HA9P5127-5 (H51275) HA9P5127-5Z (H51275Z) (Note) HA9P5127-5ZX96 (H51275Z) (Note) BAL -IN +IN V- 1 2 3 4 8 BAL 8 Ld SOIC Tape and Reel (Pb-free) + 7 V+ 6 OUT 5 NC NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2002, 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners. HA-5127, HA-5127A Absolute Maximum Ratings Supply Voltage Between V+ and V- Terminals . . . . . . . . . . . . . 44V Differential Input Voltage (Note 3) . . . . . . . . . . . . . . . . . . . . . . . 0.7V Output Current . . . . . . . . . . . . . . . . . . . . Full Short Circuit Protection Thermal Information Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) CERDIP Package. . . . . . . . . . . . . . . . . . . 115 28 SOIC Package . . . . . . . . . . . . . . . . . . . . . 157 N/A Maximum Junction Temperature (Ceramic Package, Note 1). . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range HA5127/27A-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Maximum power dissipation, including output load must be designed to maintain the maximum junction temperature below 175oC for Hermetic packages, and below 150oC for the plastic packages. 2. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 3. For differential input voltages greater than 0.7V, the input current must be limited to 25mA to protect the back-to-back input diodes. Electrical Specifications PARAMETER INPUT CHARACTERISTICS Offset Voltage VSUPPLY = ±15V, CL < 50pF, RS < 100Ω TEMP. (oC) HA-5127A MIN TYP MAX MIN HA-5127 TYP MAX UNITS µV µV µV/oC nA nA nA nA V MΩ µVP-P nV/√Hz nV/√Hz nV/√Hz pA/√Hz pA/√Hz pA/√Hz TEST CONDITIONS 25 Full ±10.3 1.5 - 10 30 0.2 ±10 ±20 7 15 ±11.5 6 0.08 3.5 3.1 3.0 1.7 1.0 0.4 25 60 0.6 ±40 ±60 35 50 0.18 8.0 4.5 3.8 4.0 2.3 0.6 ±10.3 0.8 - 30 70 0.4 ±15 ±35 12 30 ±11.5 4 0.09 3.8 3.3 3.2 1.7 1.0 0.4 100 300 1.8 ±80 ±150 75 135 0.25 8.0 4.5 3.8 0.6 Average Offset Voltage Drift Bias Current Full 25 Full Offset Current 25 Full Common Mode Range Differential Input Resistance (Note 4) Input Noise Voltage (Note 5) Input Noise Voltage Density (Note 6) 0.1Hz to 10Hz f = 10Hz f = 100Hz f = 1000Hz Input Noise Current Density (Note 6) f = 10Hz f = 100Hz f = 1000Hz TRANSFER CHARACTERISTICS Large Signal Voltage Gain VOUT = ±10V, RL = 2kΩ VCM = ±10V Full 25 25 25 25 - 25 Full 1000 600 114 1 5 ±10.0 ±11.7 111 16.5 1800 1200 126 8.5 ±11.5 ±13.8 160 70 25 - 700 300 100 1 5 ±10.0 ±11.5 111 16.5 1500 800 120 8.5 ±11.5 ±13.5 160 70 25 - V/mV V/mV dB V/V MHz Common Mode Rejection Ratio Minimum Stable Gain Unity-Gain-Bandwidth OUTPUT CHARACTERISTICS Output Voltage Swing Full 25 25 RL = 600Ω RL = 2kΩ 25 Full 25 - - V V kHz Ω mA Full Power Bandwidth (Note 7) Output Resistance Output Current TRANSIENT RESPONSE (Note 8) Rise Time Open Loop 25 25 25 - - 150 - - 150 ns 2 FN2906.6 July 27, 2005 HA-5127, HA-5127A Electrical Specifications PARAMETER Slew Rate Settling Time (Note 9) Overshoot POWER SUPPLY CHARACTERISTICS Supply Current VS = ±4.5V to ±18V 25 Full Power Supply Rejection Ratio Full 3.5 2 4.0 4 3.5 16 4.0 51 mA mA µV/V VSUPPLY = ±15V, CL < 50pF, RS < 100Ω (Continued) TEMP. (oC) 25 25 25 HA-5127A MIN 7 TYP 10 1.5 20 MAX 40 MIN 7 HA-5127 TYP 10 1.5 20 MAX 40 UNITS V/µs µs % TEST CONDITIONS VOUT = 10V NOTES: 4. This parameter value is based upon design calculations. 5. Refer to Typical Performance Curves. 6. The limits for this parameter are guaranteed based on lab characterization, and reflect lot-to-lot variation. Slew Rate 7. Full power bandwidth guaranteed based on slew rate measurement using: FPBW = -------------------------- . 2 π V PEAK 8. Refer to Test Circuits section of the data sheet. 9. Settling time is specified to 0.1% of final value for a 10V output step and AV = -1. Test Circuits and Waveforms IN + 1.8kΩ 200Ω OUT 50pF IN + 2kΩ 50pF OUT FIGURE 1. LARGE AND SMALL SIGNAL RESPONSE TEST CIRCUITS IN IN OUT OUT Vertical Scale: Input = 0.5V/Div., Output = 5V/Div. Horizontal Scale: 1µs/Div. LARGE SIGNAL RESPONSE +15V 2N4416 5kΩ 5kΩ +15V + AUT 2kΩ VOUT 2kΩ TO OSCILLOSCOPE Vertical Scale: 100mV/Div. Horizontal Scale: 200ns/Div. SMALL SIGNAL RESPONSE NOTES: 10. AV = -1. 11. Feedback and summing resistors should be 0.1% matched. VIN -15V 2kΩ 50pF 12. Clipping diodes are optional. HP5082-2810 recommended. FIGURE 2. SETTLING TIME TEST CIRCUIT 3 FN2906.6 July 27, 2005 Schematic Diagram V+ 7 1 BALANCE 8 R15 QP37 QN45 QP55 R25 QP32 R1 R16 QP35 R2 R20 R21 QP43 QP44 R17 QP38 C5 4 QN57 FN2906.6 July 27, 2005 D8 QP56 QN19 QN46 C4 QN47 R1A R2A QN51 C6 QN3 D53 D54 QP27 R9 QP36A D41 QN2 QN2A D22 QP40 QP36 QP26 R18 QN1A QN1 D9 QN4 QN13 C1 QN14 R7 QN15 R3 QP17 QP16 D33 QP26 R12 QN29 QN20 HA-5127, HA-5127A QN52 6 OUT D34 QN18 QN7 QP21 R19 QP30 R14 R13 R24 QN12 Z58 D59 QN24 D60 R6 R4 QN25 D31 QN42A QN42 QN49 QN39 QN48 R10 C2 QN5 QN6 C3 QN50 R22 R23 R11 R5 R8 QN10 V- 4 SUBSTRATE QN11 3 +INPUT 2 -INPUT HA-5127, HA-5127A Application Information V+ RT 10K 1 2 3 4 8 + 7 6 5 NOTE: Tested Offset Adjustment Range is |VOS + 1mV| minimum referred to output. Typical range is ±4mV with RT = 10kΩ. FIGURE 3. SUGGESTED OFFSET VOLTAGE ADJUSTMENT CS + R1 R1 R3 R2 - + R3 R2 C3 Low resistances are preferred for low noise applications as a 1kΩ resistor has 4nV/√Hz of thermal noise. Total resistances of greater than 10kΩ on either input can reduce stability. In most high resistance applications, a few picofarads of capacitance across the feedback resistor will improve stability. FIGURE 4. SUGGESTED STABILITY CIRCUITS Typical Performance Curves 30 20 Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V 12 6 10 OFFSET VOLTAGE (µV) 10 0 -10 -20 -30 -40 -50 -60 -60 0 1 10 100 1K 10K FREQUENCY (Hz) 100K 1M NOISE VOLTAGE (nV/√Hz) 5 NOISE CURRENT (pA/√Hz) 8 4 6 3 4 NOISE VOLTAGE 2 2 NOISE CURRENT -40 -20 0 20 40 60 80 100 120 1 0 TEMPERATURE (oC) FIGURE 5. TYPICAL OFFSET VOLTAGE DRIFT vs TEMPERATURE FIGURE 6. NOISE CHARACTERISTICS 5 FN2906.6 July 27, 2005 HA-5127, HA-5127A Typical Performance Curves 0.14 0.12 0.1 CMRR (dB) 0.08 0.06 0.04 0.02 0 4 6 8 10 12 14 16 SUPPLY VOLTAGE (±V) 18 20 Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V (Continued) 140 120 100 80 60 40 20 0 10 INPUT NOISE VOLTAGE (µVP-P) 100 1K 10K 100K FREQUENCY (Hz) 1M 10M FIGURE 7. NOISE vs SUPPLY VOLTAGE FIGURE 8. CMRR vs FREQUENCY 9 TA = 45oC OFFSET VOLTAGE CHANGE (µV) 6.0 8 5.0 VIO DRIFT (µV) 7 4.0 6 3.0 5 2.0 4 1.0 5 TYPICAL UNITS 3 0 10 20 DAYS 30 40 0.0 0.0 1.0 2.0 3.0 4.0 5.0 TIME AFTER POWER ON (MINUTES) FIGURE 9. OFFSET VOLTAGE DRIFT vs TIME FIGURE 10. OFFSET VOLTAGE WARM UP DRIFT 140 120 100 -PSRR PSRR (dB) GAIN (dB) 80 +PSRR 60 40 40 30 20 10 PHASE (DEGREES) 0 PHASE -10 -20 -30 90 0 GAIN 20 0 10 -40 180 100 1K 10K 100K FREQUENCY (Hz) 1M 10M 100 1K 10K 100K 1M FREQUENCY (Hz) 10M 100M FIGURE 11. PSRR vs FREQUENCY FIGURE 12. CLOSED LOOP GAIN AND PHASE vs FREQUENCY 6 FN2906.6 July 27, 2005 HA-5127, HA-5127A Typical Performance Curves 17 16 AVOL (100kV/V) AND VOUT (V) 15 14 13 12 11 10 9 8 7 6 5 4 0 2 4 6 8 10 LOAD RESISTANCE (kΩ) VOUT AVOL SLEW RATE NORMALIZED TO 1 AT 30oC Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V 1.05 (Continued) RL = 2k Ω 1.04 CL = 50pF 1.03 1.02 1.01 1.0 0.99 0.98 0.97 0.96 0.95 -60 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (oC) FIGURE 13. AVOL AND VOUT vs LOAD RESISTANCE FIGURE 14. NORMALIZED SLEW RATE vs TEMPERATURE 28 2.82 2.80 SUPPLY CURRENT (mA) 2.78 2.76 2.74 2.72 2.70 2.68 -55 25 TEMPERATURE (oC) 125 V O = 0V OUTPUT VOLTAGE (VP-P) 24 20 16 12 8 4 0 0.4 0.8 1.2 FREQUENCY (MHz) RL = 2k Ω CL = 50pF 1.6 2.0 FIGURE 15. SUPPLY CURRENT vs TEMPERATURE 2.60 2.58 2.56 SUPPLY CURRENT (mA) 2.54 2.52 2.50 2.48 2.46 2.44 2.42 2.40 4 6 8 10 12 14 16 SUPPLY VOLTAGE (±V) 18 20 FIGURE 16. MAX UNDISTORTED SINEWAVE OUTPUT vs FREQUENCY NORMALIZED SLEW RATE AND BANDWIDTH 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.90 0 2 4 6 8 10 12 14 SUPPLY VOLTAGE (±V) 16 18 20 SLEW RATE BANDWIDTH BANDWIDTH AT 0dB AOL VOUT = 10V STEP RL = 2kΩ, CL = 50pF FIGURE 17. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE 18. BANDWIDTH AND SLEW RATE vs SUPPLY VOLTAGE 7 FN2906.6 July 27, 2005 HA-5127, HA-5127A Typical Performance Curves 140 120 100 GAIN (dB) 80 60 40 20 0 PHASE -135 10 100 1K 10K 100K 1M -180 10M 100M PHASE SHIFT (DEGREES) GAIN 0 -45 -90 Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V (Continued) RL = 2kΩ GAIN (dB) 20 15 10 5 0 PHASE SHIFT (DEGREES) A V = +1 RL = 2kΩ CL = 50pF GAIN 0 PHASE -45 -90 -135 1K 10K 100K 1M FREQUENCY (Hz) 10M -180 100M FREQUENCY (Hz) FIGURE 19. OPEN LOOP GAIN AND PHASE FIGURE 20. CLOSED LOOP GAIN AND PHASE Horizontal Scale = 1s/Div. Vertical Scale = 0.002µV/Div. ACL = 25,000V/V, EN = 0.08µVP-P FIGURE 21. PEAK-TO-PEAK NOISE VOLTAGE (0.1Hz TO 10Hz) 8 FN2906.6 July 27, 2005 HA-5127, HA-5127A Die Characteristics DIE DIMENSIONS: 104 mils x 65 mils x 19 mils 2650µm x 1650µm x 483µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 63 PROCESS: Bipolar Dielectric Isolation PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Metallization Mask Layout HA-5127 BAL V+ OUT NC BAL -IN +IN V- All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 9 FN2906.6 July 27, 2005