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HA-2850_03

HA-2850_03

  • 厂商:

    INTERSIL(Intersil)

  • 封装:

  • 描述:

    HA-2850_03 - 470MHz, Low Power, High Slew Rate Operational Amplifier - Intersil Corporation

  • 数据手册
  • 价格&库存
HA-2850_03 数据手册
T NT DUC PRO LACEME r at ETE R EP e nt e OL OBS ENDED upport C om/tsc M il.c lS COM nica nters Sheet O RE Data ech r www.i N ur T L o I act o cont -INTERS 888 1® HA-2850 May 2003 FN2844.5 470MHz, Low Power, High Slew Rate Operational Amplifier The HA-2850 is a wideband, high slew rate, operational amplifier featuring superior speed and bandwidth characteristics. Bipolar construction, coupled with dielectric isolation, delivers outstanding performance in circuits with a closed loop gain of 10 or greater. A 340V/µs slew rate and a 470MHz gain bandwidth product ensure high performance in video and wideband amplifier designs. Differential gain and phase are a low 0.04% and 0.04 degrees respectively, making the HA-2850 ideal for video applications. A full ±10V output swing, high open loop gain, and outstanding AC parameters, make the HA-2850 an excellent choice for high speed Data Acquisition Systems. For military grade product, refer to the HA-2850/883 data sheet. Features • Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . 7.5mA • High Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . 340V/µs • Open Loop Gain. . . . . . . . . . . . . . . . . . . . . . . . . . . 25kV/V • Wide Gain-Bandwidth (AV ≥ 10). . . . . . . . . . . . . . 470MHz • Full Power Bandwidth . . . . . . . . . . . . . . . . . . . . . 5.4MHz • Low Offset Voltage. . . . . . . . . . . . . . . . . . . . . . . . . 0.6mV • Input Noise Voltage . . . . . . . . . . . . . . . . . . . . 11nV / Hz • Differential Gain/Phase . . . . . . . . . . 0.04%/0.04 Degrees • Lower Power Enhanced Replacement for AD840 and EL2040 Applications • Pulse and Video Amplifiers • Wideband Amplifiers Pinout HA-2850 (SOIC) TOP VIEW • High Speed Sample-Hold Circuits • Fast, Precise D/A Converters NC -IN +IN V- 1 2 3 4 8 NC V+ OUT NC Part Number Information PART NUMBER (BRAND) HA9P2850-5 (H28505) TEMP. RANGE (oC) 0 to 75 PACKAGE 8 Ld SOIC PKG. NO. M8.15 + 7 6 5 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2003. All Rights Reserved All other trademarks mentioned are the property of their respective owners. HA-2850 Absolute Maximum Ratings Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 35V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Thermal Information Thermal Resistance (Typical, Note 1) θJA (oC/W) Operating Conditions Temperature Range HA-2850-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC Recommended Supply Voltage Range . . . . . . . . . . . . ±6V To ±15V 8 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . 157 Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . .175oC Maximum Junction Temperature (Plastic Package, Note 2) . .150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. θJA is measured with the component mounted on an evaluation PC board in free air. 2. Maximum power dissipation, including output load, must be designed to maintain the maximum junction temperature below 150oC for plastic packages. Electrical Specifications VSUPPLY = ±15V, RL = 1kΩ , CL ≤ 10pF, Unless Otherwise Specified HA-2850-5 PARAMETER INPUT CHARACTERISTICS Offset Voltage (Note 9) TEST CONDITIONS TEMP. (oC) MIN TYP MAX UNITS 25 Full ±10 - 0.6 2 20 5 8 1 10 1 11 6 2 6 14.5 20 4 8 - mV mV µV/oC µA µA µA µA kΩ pF V nV⁄ Hz pA ⁄ Hz Average Offset Voltage Drift Bias Current (Note 9) Full 25 Full Offset Current 25 Full Input Resistance Input Capacitance Common Mode Range Input Noise Voltage (Note 9) Input Noise Current (Note 9) TRANSFER CHARACTERISTICS Large Signal Voltage Gain Note 4 f = 1kHz, RSOURCE = 0Ω f = 1kHz, RSOURCE = 10kΩ 25 25 Full 25 25 25 Full 20 15 75 10 - 25 20 80 470 - kV/V kV/V dB V/V MHz Common-Mode Rejection Ratio (Note 9) Minimum Stable Gain Gain Bandwidth Product (Note 9) OUTPUT CHARACTERISTICS Output Voltage Swing (Note 9) Output Current (Note 9) Output Resistance Full Power Bandwidth (Note 5) Differential Gain Differential Phase Harmonic Distortion (Note 9) VCM = ±10V Full 25 VO = 90mV, AV = 100 25 Note 4 Note 4 Full Full 25 ±10 ±10 4.8 - ±11 ±20 30 5.4 0.04 0.04 -74 - V mA Ω MHz % Degrees dBc Note 4 AV = +10, Note 3 AV = +10, Note 3 AV = +10, VO = 2VP-P, f = 1MHz 25 25 25 25 2 HA-2850 Electrical Specifications PARAMETER TRANSIENT RESPONSE (Note 6) Rise Time Overshoot Slew Rate (Notes 8, 9) Settling Time POWER REQUIREMENTS Supply Current (Note 9) Power Supply Rejection Ratio (Note 9) NOTES: 3. Differential gain and phase are measured with a VM700A video tester, using a NTC-7 composite VITS. 4. RL = 1kΩ, VO = ±10V, 0V to ±10V for slew rate. Slew Rate 5. Full Power Bandwidth guaranteed based on slew rate measurement using: FPBW = -------------------------- ; V PEAK = 10V . 2 π V PEAK 6. Refer to Test Circuit section of data sheet. 7. VSUPPLY = ±10V to ±20V. 8. This parameter is not tested. The limits are guaranteed based on lab characterization, and reflect lot-to-lot variation. 9. See “Typical Performance Curves” for more information. Note 7 Full Full 75 7.5 90 8.0 mA dB Note 4 10V Step to 0.1% 25 25 25 25 300 5 25 340 200 ns % V/µs ns VSUPPLY = ±15V, RL = 1kΩ , CL ≤ 10pF, Unless Otherwise Specified (Continued) HA-2850-5 TEST CONDITIONS TEMP. (oC) MIN TYP MAX UNITS Test Circuits and Waveforms IN + - OUT 900Ω NOTES: 10. VS = ±15V. 11. AV = +10. 12. CL < 10pF. 100Ω TEST CIRCUIT INPUT INPUT OUTPUT OUTPUT Input = 1V/Div. Output = 5V/Div. 50ns/Div. Input = 10mV/Div. Output = 100mV/Div. 50ns/Div. LARGE SIGNAL RESPONSE SMALL SIGNAL RESPONSE 3 HA-2850 Test Circuits and Waveforms V+ 0.001µF (Continued) NOTES: 13. AV = -10. 200Ω INPUT 1 µF 14. Load Capacitance should be less than 10pF. OUTPUT + 0.001µF 15. It is recommended that resistors be carbon composition and that feedback and summing network ratios be matched to 0.1%. 16. SETTLING POINT (Summing Node) capacitance should be less than 10pF. For optimum settling time results, it is recommended that the test circuit be constructed directly onto the device pins. A Tektronix 568 Sampling Oscilloscope with S-3A sampling heads is recommended as a settle point monitor. PROBE MONITOR 500Ω V- 1 µF 2kΩ SETTLING POINT 5kΩ SETTLING TIME TEST CIRCUIT Typical Performance Curves 100 80 GAIN (dB) 60 40 20 0 AVCL = 10 AVCL = 1000 AVCL = 100 OPEN LOOP TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ , CL < 10pF, Unless Otherwise Specified 475 GAIN BANDWIDTH PRODUCT (MHz) 450 PHASE (DEGREES) AVCL= 1000 AVCL= 100 AVCL = 10 0 OPEN LOOP 90 180 425 400 5 6 7 8 9 10 11 12 13 14 15 SUPPLY VOLTAGE (±V) 1K 10K 100K 1M 10M FREQUENCY (Hz) 100M 500M FIGURE 1. FREQUENCY RESPONSE FOR VARIOUS GAINS FIGURE 2. GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE 4 HA-2850 Typical Performance Curves 600 550 GAIN BANDWIDTH PRODUCT (MHz) 500 70 CMRR (dB) -40 -20 0 20 40 60 80 100 120 140 450 400 350 300 250 200 -60 60 50 40 30 20 100 TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ , CL < 10pF, Unless Otherwise Specified (Continued) 90 80 1K 10K 100K 1M 10M TEMPERATURE (oC) FREQUENCY (Hz) FIGURE 3. GAIN BANDWIDTH PRODUCT vs TEMPERATURE FIGURE 4. CMRR vs FREQUENCY 110 100 NOISE VOLTAGE (nV/√Hz) 90 80 PSRR (dB) 70 60 50 40 30 20 10 0 100 1K 10K 100K FREQUENCY (Hz) 1M 10M ±PSRR 60 50 40 30 20 10 0 10 100 1K FREQUENCY (Hz) 10K NOISE CURRENT NOISE VOLTAGE 30 20 10 0 100K 60 50 40 NOISE CURRENT (pA/√Hz) 15 FIGURE 5. PSRR vs FREQUENCY FIGURE 6. INPUT NOISE vs FREQUENCY 350 350 325 SLEW RATE (V/µs) SLEW RATE (V/µs) -40 -20 0 20 40 60 80 100 120 140 325 300 300 275 275 250 250 225 -60 225 5 6 7 8 9 10 11 12 13 14 TEMPERATURE (oC) SUPPLY VOLTAGE (±V) FIGURE 7. SLEW RATE vs TEMPERATURE FIGURE 8. SLEW RATE vs SUPPLY VOLTAGE 5 HA-2850 Typical Performance Curves TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ , CL < 10pF, Unless Otherwise Specified (Continued) 6.5 3.5 INPUT OFFSET VOLTAGE (mV) INPUT BIAS CURRENT (µA) SUPPLY CURRENT (mA) 6.0 2.5 5.5 BIAS CURRENT 5.0 0.5 4.5 OFFSET VOLTAGE -0.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 1.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 125oC 25oC -55oC 5 6 7 8 TEMPERATURE (oC) 9 10 11 12 SUPPLY VOLTAGE (±V) 13 14 15 FIGURE 9. INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT vs TEMPERATURE FIGURE 10. SUPPLY CURRENT vs SUPPLY VOLTAGE 13 ±15V, 1kΩ NEGATIVE OUTPUT SWING (V) -3 ±8V, 75Ω -5 ±8V, 1kΩ -7 ±15V, 75Ω -9 ±15V, 150Ω -11 ±15V, 1kΩ 140 -13 -60 -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (oC) ±8V, 150Ω POSITIVE OUTPUT SWING (V) 11 ±15V, 150Ω 9 ±15V, 75Ω 7 ±8V, 1kΩ 5 ±8V, 150Ω ±8V, 75Ω 3 -60 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (oC) FIGURE 11. POSITIVE OUTPUT SWING vs TEMPERATURE FIGURE 12. NEGATIVE OUTPUT SWING vs TEMPERATURE 6 HA-2850 Typical Performance Curves 30 OUTPUT VOLTAGE SWING (VP-P) 25 20 15 10 5 -80 0 -90 100K 1M FREQUENCY (Hz) VO = 0.5VP-P VO = 1VP-P 10M THD (dBc) VSUPPLY = ±15V TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ , CL < 10pF, Unless Otherwise Specified (Continued) -30 -40 -50 VSUPPLY = ±8V -60 -70 VO = 10VP-P VO = 2VP-P 1K 10K 100K 1M FREQUENCY (Hz) 10M 100M FIGURE 13. MAXIMUM UNDISTORTED OUTPUT SWING vs FREQUENCY FIGURE 14. TOTAL HARMONIC DISTORTION vs FREQUENCY -30 3RD INTERMOD PRODUCT (dBc) -40 VO = 5VP-P -50 -60 -70 -80 -90 500K VO = 0.25VP-P VO = 0.5VP-P 1M FREQUENCY (Hz) 10M VO = 2VP-P VO = 1VP-P FIGURE 15. INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE) 7 HA-2850 Die Characteristics DIE DIMENSIONS: 65 mils x 52 mils x 19 mils 1650µm x 1310µm x 483µm METALLIZATION: Type: Aluminum, 1% Copper Thickness: 16kÅ ±2kÅ SUBSTRATE POTENTIAL VTRANSISTOR COUNT: 34 PROCESS: High Frequency Bipolar Dielectric Isolation PASSIVATION: Type: Nitride over Silox Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1kÅ Metallization Mask Layout HA-2850 V+ OUT -IN +IN V- All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 8
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