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HFA3046B

HFA3046B

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    SOIC14_150MIL

  • 描述:

    超高频晶体管阵列 SOIC14_150MIL 12V 8GHz

  • 数据手册
  • 价格&库存
HFA3046B 数据手册
® HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet December 21, 2005 FN3076.13 Ultra High Frequency Transistor Arrays The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com. Features • NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz • NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz • PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60 • PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V • Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB • Collector to Collector Leakage . . . . . . . . . . . . . . . . . .
HFA3046B 价格&库存

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