HFA3102BZ96

HFA3102 ® Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA. • High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz Ordering Information PART NUMBER TEMP. RANGE (°C) • High Power Gain-Bandwidth Product. . . . . . . . . . . . 5GHz • High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70 • Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB • Low Collector Leakage Current . . . . . . . . . . . . . .