HGT1S12N60C3DS

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182. Features • 24A, 600V at TC = 25oC • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB E C G COLLECTOR (FLANGE) Ordering Information PART NUMBER HGTP12N60C3D HGT1S12N60C3DS PACKAGE TO-220AB TO-263AB BRAND 12N60C3D 12N60C3D JEDEC TO-263AB COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in Tape and Reel, i.e., HGT1S12N60C3DS9A. G Symbol C E G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTP12N60C3D, HGT1S12N60C3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 600 24 12 12 96 ±20 ±30 24A at 600V 104 0.83 -40 to 150 260 4 13 UNITS V A A A A V V W W/oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.0 VCE(PK) = 480V VCE(PK) = 600V 80 24 TYP 1.65 1.85 1.80 2.0 5.0 MAX 250 2.0 2.0 2.2 2.2 2.4 6.0 ±100 UNITS V µA mA V V V V V nA A A Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 15A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH Gate to Emitter Plateau Voltage On-State Gate Charge VGEP Qg(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25Ω, L = 100µH VGE = 15V VGE = 20V - 7.6 48 62 28 20 270 210 380 900 1.7 55 71 400 275 2.1 V nC nC ns ns ns ns µJ µJ V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage td(ON)I tri td(OFF)I tfi EON EOFF VEC IEC = 12A - 2 HGTP12N60C3D, HGT1S12N60C3DS Electrical Specifications PARAMETER Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL trr TEST CONDITIONS IEC = 12A, dIEC/dt = 200A/µs IEC = 1.0A, dIEC/dt = 200A/µs Thermal Resistance RθJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending at the point where the collector current equals zero (ICE = 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. MIN TYP 32 23 MAX 40 30 1.2 1.9 UNITS ns ns oC/W oC/W Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 80 DUTY CYCLE