HGT1S15N120C3S

HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S June 1997 35A, 1200V, UFS Series N-Channel IGBTs Description The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Features • 35A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 350ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Ordering Information PART NUMBER HGTG15N120C3 HGTP15N120C3 HGT1S15N120C3 HGT1S15N120C3S PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND 15N120C3 15N120C3 15N120C3 15N120C3 Symbol C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in tape and reel; i.e., HGT1S15N120C3S9A. G Formerly Developmental Type TA49145. E Packaging JEDEC STYLE TO-247 EMITTER COLLECTOR GATE JEDEC TO-220AB (ALTERNATE VERSION) EMITTER COLLECTOR GATE COLLECTOR (FLANGE) COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB M A A COLLECTOR (FLANGE) GATE EMITTER COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 A CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 File Number 4244.3 1 HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3S, HGT1S15N120C3S Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . tSC 35 15 120 ±20 ±30 15A at 1200V 164 1.32 100 -55 to 150 260 6 25 W W/oC mJ oC oC UNITS V A A A V V 1200 µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 720V, TJ = 125oC, RGE = 25Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 10Ω VGE = 15V, L = 1mH VCE(PK) = 960V VCE(PK) = 1200V VGE = 15V VGE = 20V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 15 4.0 40 15 TYP 25 2.3 2.4 5.6 8.8 75 100 17 25 470 350 2100 4700 MAX 250 3.0 3.5 3.2 7.5 ±100 100 130 550 400 0.76 UNITS V V µA mA V V V nA A A V nC nC ns ns ns ns µJ µJ oC/W Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGEP Qg(ON) td(ON)I trI td(OFF)I t fI EON EOFF RθJC IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVES TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. 2 HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 100 DUTY CYCLE