HGT1S5N120BNDS

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49306. Features • 21A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG5N120BND HGTP5N120BND HGT1S5N120BNDS PACKAGE TO-247 TO-220AB TO-263AB BRAND 5N120BND 5N120BND 5N120BND COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S5N120BNS9A. JEDEC TO-220AB (ALTERNATE VERSION) EC Symbol C COLLECTOR (FLANGE) G G JEDEC TO-263AB E COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. SABER™ is a trademark of Analogy, Inc. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG5N120BND HGTP5N120BND HGT1S5N120BNDS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 21 10 40 ±20 ±30 30A at 1200V 167 1.33 -55 to 150 300 260 8 15 UNITS V A A A V V W W/oC oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 25Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 6.0 30 TYP 100 2.45 3.7 6.8 10.5 53 60 22 15 160 130 450 390 MAX 250 1.5 2.7 4.2 ±250 65 72 25 20 180 160 600 450 UNITS V µA µA mA V V V nA A V nC nC ns ns ns ns µJ µJ Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 5A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP QG(ON) IC = 45µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 25Ω, VGE = 15V, L = 5mH, VCE(PK) = 1200V IC = 5A, VCE = 0.5 BVCES IC = 5A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON EOFF IGBT and Diode at TJ = 25oC, ICE = 5A, VCE = 0.8 BVCES , VGE = 15V, RG = 25Ω , L = 5mH, Test Circuit (Figure 20) 2 HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 10A IEC = 7A, dlEC/dt = 200A/µs IEC = 1A, dlEC/dt = 200A/µs Thermal Resistance Junction To Case RθJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 150oC, ICE = 5A, VCE = 0.8 BVCES , VGE = 15V, RG = 25Ω , L = 5mH, Test Circuit (Figure 20) MIN TYP 20 15 182 175 1000 560 2.70 50 30 MAX 25 20 280 200 1300 800 3.50 60 40 0.75 1.75 UNITS ns ns ns ns µJ µJ V ns ns oC/W oC/W Typical Performance Curves 25 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 35 30 25 20 15 10 5 0 VGE = 15V 20 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 5mH 15 10 5 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 3 HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Typical Performance Curves Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) 200 100 50 TJ = 150oC, RG = 25Ω, L = 5mH, V CE = 960V TC = 75oC, VGE = 15V TC VGE IDEAL DIODE 75oC 15V 75oC 12V VCE = 840V, RG = 25Ω, TJ = 125oC 35 ISC 30 25 20 tSC 15 10 30 20 60 50 40 70 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.75oC/W, SEE NOTES 2 TC VGE 110oC 15V 110oC 12V 10 4 6 8 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 30 25 20 DUTY CYCLE