HGTD1N120CNS

HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 File Number 4652.2 6.2A, 1200V, NPT Series N-Channel IGBT The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49317. Features • 6.2A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.intersil.com • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGTD1N120CNS HGTP1N120CN PACKAGE TO-252AA TO-220AB BRAND 1N120C 1N120CN Packaging JEDEC TO-220AB E C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA in tape and reel, i.e. HGTD1N120CNS9A COLLECTOR (FLANGE) Symbol C JEDEC TO-252AA G G E COLLECTOR (FLANGE) E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER™ is a trademark of Analogy, Inc. HGTD1N120CNS, HGTP1N120CN Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTD1N120CNS, HGTP1N120CN Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 1200 6.2 3.2 6 ±20 ±30 6A at 1200V 60 0.476 10 -55 to 150 300 260 8 11 UNITS V A A A V V W W/oC mJ oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω . Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC MIN 1200 15 6.0 6 TYP 20 2.05 2.75 7.1 9.7 13 16 MAX 250 1.0 2.4 3.2 ±250 19 28 UNITS V V µA µA mA V V V nA A V nC nC Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 1.0A, VGE = 15V TC = 25oC TC = 150oC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP QG(ON) IC = 50µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH, VCE(PK) = 1200V IC = 1.0A, VCE = 0.5 BVCES IC = 1.0A, VCE = 0.5 BVCES VGE = 15V VGE = 20V 2 HGTD1N120CNS, HGTP1N120CN Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC IGBT and Diode at TJ = 150oC ICE = 1.0 A VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 1.0A VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 18) MIN TYP 15 11 65 365 78 175 140 13 11 75 465 83 385 200 MAX 21 15 95 450 195 155 20 18 100 625 460 225 2.1 UNITS ns ns ns ns µJ µJ µJ ns ns ns ns µJ µJ µJ oC/W Typical Performance Curves 7 ICE , DC COLLECTOR CURRENT (A) 6 5 4 3 2 1 0 Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) 7 6 5 4 3 2 1 0 VGE = 15V TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 3 HGTD1N120CNS, HGTP1N120CN Typical Performance Curves 300 fMAX , OPERATING FREQUENCY (kHz) 200 100 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) TC 75oC 75oC 110oC 110oC VGE 15V 13V 15V 13V VCE = 840V, RG = 82Ω, TJ = 125oC tSC ISC, PEAK SHORT CIRCUIT CURRENT (A) 8 3 20 20 IDEAL DIODE TC = 75oC, VGE = 15V TJ = 150oC, RG = 82Ω, L = 4mH VCE = 960V 18 18 16 16 14 ISC 12 14 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 2.1oC/W, SEE NOTES 1.0 2.0 3.0 ICE , COLLECTOR TO EMITTER CURRENT (A) 12 5 0.5 10 13 14 VGE , GATE TO EMITTER VOLTAGE (V) 10 15 FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) 6 5 4 3 2 1 0 TC = -55oC TC = 150oC TC = 25oC 6 5 4 TC = -55oC 3 2 1 0 TC = 150oC TC = 25oC DUTY CYCLE < 0.5%, VGE = 13V PULSE DURATION = 250µs 0 1 2 3 4 5 6 7 8 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 0 1 2 3 4 5 6 7 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1200 EON2 , TURN-ON ENERGY LOSS (µJ) 1000 800 600 400 200 EOFF, TURN-OFF ENERGY LOSS (µJ) RG = 82Ω, L = 4mH, VCE = 960V 500 RG = 82Ω, L = 4mH, VCE = 960V TJ = 150oC, VGE = 13V OR 15V 400 TJ = 150oC, VGE = 13V TJ = 150oC, VGE = 15V 300 200 TJ = 25oC, VGE = 13V OR 15V TJ = 25oC, VGE = 13V TJ = 25oC, VGE = 15V 1 1.5 2 2.5 3 100 0 0.5 0 0.5 1 1.5 2 2.5 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 HGTD1N120CNS, HGTP1N120CN Typical Performance Curves 24 RG = 82Ω, L = 4mH, VCE = 960V TJ = 25oC, VGE = 13V TJ = 150oC, VGE = 13V 16 TJ = 25oC, VGE = 15V 12 TJ = 150oC, VGE = 15V 8 0.5 trI , RISE TIME (ns) 20 Unless Otherwise Specified (Continued) 28 24 RG = 82Ω, L = 4mH, VCE = 960V TJ = 25oC, TJ = 150oC, VGE = 13V tdI , TURN-ON DELAY TIME (ns) 20 16 12 8 4 0.5 TJ = 25oC, TJ = 150oC, VGE = 15V 1 1.5 2 2.5 3 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 84 td(OFF)I , TURN-OFF DELAY TIME (ns) 80 76 72 68 64 60 56 0.5 RG = 82Ω, L = 4mH, VCE = 960V 560 520 RG = 82Ω, L = 4mH, VCE = 960V TJ = 150oC, VGE = 15V TJ = 150oC, VGE = 13V TJ = 25oC, VGE = 15V tfI , FALL TIME (ns) 480 440 400 360 320 280 TJ = 25oC, VGE = 13V OR 15V 1 1.5 2 2.5 3 TJ = 150oC, VGE = 13V OR 15V TJ = 25oC, VGE = 13V 1 1.5 2 2.5 3 240 0.5 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) 16 14 12 10 8 6 4 2 0 6 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs TC = -55oC 15 VCE = 800V 12 VCE = 400V 9 VCE = 1200V TC = 25oC 6 3 IG(REF) = 1mA, RL = 600Ω, TC = 25oC 0 0 4 8 12 16 20 TC = 150oC 9 12 15 VGE , GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS 5 HGTD1N120CNS, HGTP1N120CN Typical Performance Curves 350 FREQUENCY = 1MHz 300 Unless Otherwise Specified (Continued) ICE , COLLECTOR TO EMITTER CURRENT (A) 12 10 8 6 4 2 0 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, TC = 110oC VGE = 15V C, CAPACITANCE (pF) CIES 250 200 150 100 COES 50 CRES 0 0 5 10 15 20 25 VGE = 14V VGE = 13V 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 2.0 1.0 0.5 0.2 0.1 0.1 0.05 0.02 t1 0.01 0.01 0.005 10-5 10-4 10-3 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-2 PD t2 100 10-1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms VGE 90% RHRD4120 10% EON2 EOFF ICE 90% + VCE VDD = 960V td(OFF)I tfI 10% td(ON)I trI ICE L = 4mH RG = 82Ω - FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS 6 HGTD1N120CNS, HGTP1N120CN Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.