HGTG10N120BN

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 File Number 4575.2 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49290. Features • 35A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Ordering Information PART NUMBER HGTG10N120BN HGTP10N120BN HGT1S10N120BNS PACKAGE TO-247 TO-220AB T0-263AB BRAND G10N120BN 10N120BN 10N120BN Packaging JEDEC STYLE TO-247 E C COLLECTOR (FLANGE) G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S10N120BNS9A. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) E G C G E COLLECTOR (FLANGE) JEDEC TO-263AB COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER™ is a trademark of Analogy, Inc. HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG10N120BN HGTP10N120BN HGT1S10N120BNS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 35 17 80 ±20 ±30 55A at 1200V 298 2.38 80 -55 to 150 300 260 8 15 UNITS V A A A V V W W/oC mJ oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 20A, L = 400µH, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 10Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC MIN 1200 15 6.0 55 TYP 150 2.45 3.7 6.8 MAX 250 2 2.7 4.2 ±250 UNITS V V µA µA mA V V V nA A Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 10A, VGE = 15V TC = 25oC TC = 150oC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA IC = 90µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V IC = 10A, VCE = 0.5 BVCES IC = 10A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) - 10.4 100 130 120 150 V nC nC 2 HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC IGBT and Diode at TJ = 150oC ICE = 10A VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 10A VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 18) MIN TYP 23 11 165 100 0.32 0.85 0.8 21 11 190 140 0.4 1.75 1.1 MAX 26 15 210 140 0.4 1.1 1.0 25 15 250 200 0.5 2.3 1.4 0.42 UNITS ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ oC/W Typical Performance Curves 35 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 60 50 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VGE = 15V 30 25 20 15 10 5 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 3 HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Typical Performance Curves fMAX, OPERATING FREQUENCY (kHz) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) 25 250 TJ = 150oC, RG = 10Ω, L = 2mH, V CE = 960V 100 50 TC = 75oC, VGE = 15V, IDEAL DIODE VCE = 840V, RG = 10Ω, TJ = 125oC 20 tSC 15 ISC 200 150 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.42oC/W, SEE NOTES 2 5 TC 75oC 75oC 110oC 110oC VGE 15V 12V 15V 12V 20 10 100 1 10 5 12 13 14 15 16 50 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE, COLLECTOR TO EMITTER CURRENT (A) 50 DUTY CYCLE