HGTG10N120BND

HGTG10N120BND Data Sheet January 2000 File Number 4579.3 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302. Features • 35A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG10N120BND PACKAGE TO-247 BRAND 10N120BND NOTE: When ordering, use the entire part number. Symbol G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTG10N120BND Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG10N120BND Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 35 17 80 ±20 ±30 55A at 1200V 298 2.38 -55 to 150 260 8 15 UNITS V A A A V V W W/oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 10Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 6.0 55 TYP 170 2.45 3.7 6.8 10.4 100 130 23 11 165 100 0.85 0.8 MAX 250 2.5 2.7 4.2 ±250 120 150 26 15 210 140 1.05 1.0 UNITS V µA µA mA V V V nA A V nC nC ns ns ns ns mJ mJ Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 10A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP QG(ON) IC = 90µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V IC = 10A, VCE = 0.5 BVCES IC = 10A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON EOFF IGBT and Diode at TJ = 25oC ICE = 10A VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 20) 2 HGTG10N120BND Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 10A IEC = 10A, dIEC/dt = 200A/µs IEC = 1A, dIEC/dt = 200A/µs Thermal Resistance Junction To Case RθJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 10A VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 20) MIN TYP 21 11 190 140 1.75 1.1 2.55 57 32 MAX 25 15 250 200 2.3 1.4 3.2 70 40 0.42 1.25 UNITS ns ns ns ns mJ mJ V ns ns oC/W oC/W Typical Performance Curves 35 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 30 25 20 15 10 5 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) 60 50 TJ = 150oC, RG = 10Ω, VG = 15V, L = 400µH 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 3 HGTG10N120BND Typical Performance Curves fMAX , OPERATING FREQUENCY (kHz) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) 100 50 VCE = 840V, RG = 10Ω, TJ = 125oC 20 tSC 15 ISC 150 200 TC = 75oC, VGE = 15V, IDEAL DIODE fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 10 fMAX2 = (PD - PC) / (EON + EOFF) TC PC = CONDUCTION DISSIPATION 75oC (DUTY FACTOR = 50%) 75oC 110oC RØJC = 0.42oC/W, SEE NOTES 110oC 1 2 5 10 20 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE 15V 12V 15V 12V 10 100 5 12 13 14 15 16 50 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE, COLLECTOR TO EMITTER CURRENT (A) 50 DUTY CYCLE