HGTG20N60A4

HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 4781.1 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339. Features • >100kHz Operation at 390V, 20A • 200kHz Operation at 390V, 12A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER™ Model www.intersil.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220AB ALTERNATE VERSION E Ordering Information PART NUMBER HGTP20N60A4 HGTG20N60A4 PACKAGE TO-220AB TO-247 BRAND 20N60A4 20N60A4 C G COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Symbol C JEDEC STYLE TO-247 E C G G E COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. SABER™ is a trademark of Analogy, Inc. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999 HGTG20N60A4, HGTP20N60A4 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60A4, HGTP20N60A4 Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 600 70 40 280 ±20 ±30 100A at 600V 290 2.32 -55 to 150 300 260 UNITS V A A A V V W W/oC oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications PARAMETER TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = 600V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 15 4.5 100 TYP 1.8 1.6 5.5 8.6 142 182 15 12 73 32 105 280 150 MAX 250 2.0 2.7 2.0 7.0 ±250 162 210 350 200 UNITS V V µA mA V V V nA A V nC nC ns ns ns ns µJ µJ µJ Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 20A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP Qg(ON) IC = 250µA, VCE = 600V VGE = ±20V TJ = 150oC, RG = 3Ω, VGE = 15V L = 100µH, VCE = 600V IC = 20A, VCE = 300V IC = 20A, VCE = 300V VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IGBT and Diode at TJ = 25oC ICE = 20A VCE = 390V VGE =15V RG = 3 Ω L = 500µH Test Circuit (Figure 20) 2 HGTG20N60A4, HGTP20N60A4 Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2) Thermal Resistance Junction To Case NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC TEST CONDITIONS IGBT and Diode at TJ = 125oC ICE = 20A VCE = 390V VGE = 15V RG = 3 Ω L = 500µH Test Circuit (Figure 20) MIN TYP 15 13 105 55 115 510 330 MAX 21 18 135 73 600 500 0.43 UNITS ns ns ns ns µJ µJ µJ oC/W Typical Performance Curves 100 ICE , DC COLLECTOR CURRENT (A) DIE CAPABILITY 80 PACKAGE LIMIT Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 120 100 80 60 40 20 0 0 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH 60 40 20 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) 100 200 300 400 500 600 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 700 FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 500 fMAX, OPERATING FREQUENCY (kHz) TC 75oC 300 VGE 15V FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (µs) VCE = 390V, RG = 3Ω, TJ = 125oC ISC 12 10 8 6 4 2 0 400 350 300 250 200 150 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43oC/W, SEE NOTES TJ = 125oC, RG = 3Ω, L = 500µH, V CE = 390V 40 5 10 20 30 40 50 tSC 10 11 12 13 14 15 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) 14 450 HGTG20N60A4, HGTP20N60A4 Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 100 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 100 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 80 80 60 60 40 TJ = 125oC 20 TJ = 150oC 0 TJ = 25oC 40 TJ = 125oC 20 TJ = 150oC TJ = 25oC 0 0 0.4 1.6 2.0 2.4 2.8 0.8 1.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1400 EON2 , TURN-ON ENERGY LOSS (µJ) 1200 1000 800 600 400 200 0 EOFF, TURN-OFF ENERGY LOSS (µJ) RG = 3Ω, L = 500µH, VCE = 390V 800 700 600 500 400 300 200 100 0 5 RG = 3Ω, L = 500µH, VCE = 390V TJ = 125oC, VGE = 12V, VGE = 15V TJ = 125oC, VGE = 12V OR 15V TJ = 25oC, VGE = 12V, VGE = 15V 5 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) 40 TJ = 25oC, VGE = 12V OR 15V 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 22 td(ON)I, TURN-ON DELAY TIME (ns) 20 18 16 14 12 10 8 RG = 3Ω, L = 500µH, VCE = 390V TJ = 25oC, TJ = 125oC, VGE = 12V trI , RISE TIME (ns) 36 32 28 24 20 16 12 8 4 RG = 3Ω, L = 500µH, VCE = 390V TJ = 25oC, TJ = 125oC, VGE = 12V TJ = 25oC, TJ = 125oC, VGE = 15V TJ = 25oC OR TJ = 125oC, VGE = 15V 5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 4 HGTG20N60A4, HGTP20N60A4 Typical Performance Curves 120 td(OFF)I , TURN-OFF DELAY TIME (ns) 110 100 90 80 VGE = 12V, VGE = 15V, TJ = 25oC 70 24 60 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) 16 5 10 15 20 25 30 35 40 tfI , FALL TIME (ns) VGE = 12V, VGE = 15V, TJ = 125oC RG = 3Ω, L = 500µH, VCE = 390V Unless Otherwise Specified (Continued) 80 72 64 56 48 40 32 TJ = 25oC, VGE = 12V OR 15V TJ = 125oC, VGE = 12V OR 15V RG = 3Ω, L = 500µH, VCE = 390V ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 240 200 160 120 80 40 0 6 7 8 9 10 11 12 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs VGE, GATE TO EMITTER VOLTAGE (V) 16 14 12 10 8 6 4 2 0 0 IG(REF) = 1mA, RL = 15Ω, TJ = 25oC VCE = 600V VCE = 400V TJ = 25oC TJ = 125oC TJ = -55oC VCE = 200V 20 40 60 80 100 120 140 160 QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) FIGURE 14. GATE CHARGE WAVEFORMS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10 ICE = 30A ICE = 30A 1 ICE = 20A ICE = 10A ICE = 20A ICE = 10A 0.1 3 50 75 100 125 150 10 100 RG, GATE RESISTANCE (Ω) 1000 TC , CASE TEMPERATURE (oC) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE 5 HGTG20N60A4, HGTP20N60A4 Typical Performance Curves 5 FREQUENCY = 1MHz C, CAPACITANCE (nF) 4 Unless Otherwise Specified (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.2 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs, 2.1 3 CIES 2.0 ICE = 30A ICE = 20A 2 1.9 1 COES CRES 1.8 ICE = 10A 0 0 20 40 60 80 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.7 8 9 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-1 100 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG20N60A4D DIODE TA49372 90% VGE L = 500µH VCE RG = 3Ω DUT + ICE 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 - VDD = 390V FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS 6 HGTG20N60A4, HGTP20N60A4 Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc. HGTG20N60A4, HGTP20N60A4 TO-220AB (Alternate Version) 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE ØP E Q H1 D TERM. 4 A A1 INCHES SYMBOL A A1 b b1 c D MIN 0.170 0.048 0.030 0.045 0.018 0.590 0.395 MAX 0.180 0.052 0.034 0.055 0.022 0.610 0.405 MILLIMETERS MIN 4.32 1.22 0.77 1.15 0.46 14.99 10.04 MAX 4.57 1.32 0.86 1.39 0.55 15.49 10.28 NOTES 2, 4 2, 4 2, 4 2, 4 5 5 6 3 - L1 b1 c b E e e1 L 60o 1 2 3 0.100 TYP 0.200 BSC 0.235 0.095 0.530 0.110 0.149 0.105 0.255 0.105 0.550 0.130 0.153 0.115 2.54 TYP 5.08 BSC 5.97 2.42 13.47 2.80 3.79 2.66 6.47 2.66 13.97 3.30 3.88 2.92 H1 e e1 J1 J1 L L1 ØP Q NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Dimension (without solder). 3. Solder finish uncontrolled in this area. 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 3 dated 7-97. 8 HGTG20N60A4, HGTP20N60A4 TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE E A ØS Q ØR D TERM. 4 ØP INCHES SYMBOL A b b1 b2 c D MIN 0.180 0.046 0.060 0.095 0.020 0.800 0.605 MAX 0.190 0.051 0.070 0.105 0.026 0.820 0.625 MILLIMETERS MIN 4.58 1.17 1.53 2.42 0.51 20.32 15.37 MAX 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES 2, 3 1, 2 1, 2 1, 2, 3 4 4 5 1 - L1 L b1 b2 c b 1 2 3 J1 3 2 1 E e e1 J1 L L1 ØP Q ØR ØS 0.219 TYP 0.438 BSC 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270 5.56 TYP 11.12 BSC 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85 e e1 BACK VIEW NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 9