HGTG20N60C3

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49178. Features • 45A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 E C Ordering Information PART NUMBER HGTG20N60C3 HGTP20N60C3 HGT1S20N60C3S PACKAGE TO-247 TO-220AB TO-263AB BRAND G20N60C3 G20N60C3 G20N60C3 G COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3S9A. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) E C G G COLLECTOR (FLANGE) E JEDEC TO-263AB COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 600 45 20 300 ±20 ±30 20A at 600V 164 1.32 100 -55 to 150 300 260 4 10 UNITS V A A A V V W W/oC mJ oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES IC = IC110 VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 15 3.4 VCE = 480V VCE = 600V 120 20 TYP 28 1.4 1.5 4.8 8.4 91 122 28 24 151 55 295 500 500 MAX 250 5.0 1.8 1.9 6.3 ±250 110 145 32 28 210 98 320 550 700 UNITS V V µA mA V V V nA A A V nC nC ns ns ns ns µJ µJ µJ Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH ICE = IC110 VCE = 0.5 BVCES Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF ICE = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 3) IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Test Circuit (Figure 17) 2 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 3) Thermal Resistance Junction To Case NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Test Circuit (Figure 17) MIN TYP 28 24 280 108 380 1.0 1.2 MAX 32 28 450 210 410 1.1 1.7 0.76 UNITS ns ns ns ns µJ mJ mJ oC/W Typical Performance Curves 50 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 40 140 120 100 80 60 40 20 0 0 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH 30 20 10 0 25 50 75 100 125 150 100 200 300 400 500 600 700 TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) 100 TC 75oC 75oC 110oC 110oC 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.76oC/W, SEE NOTES 2 5 10 VGE 15V 10V 15V 10V TJ = 150oC, RG = 10Ω, L = 1mH, V CE = 480V VCE = 360V, RG = 10Ω, TJ = 125oC 12 ISC 10 8 6 4 tSC 2 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) 150 350 300 250 200 400 1 20 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 3 ISC , PEAK SHORT CIRCUIT CURRENT (A) 14 450 HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Typical Performance Curves ICE , COLLECTOR TO EMITTER CURRENT (A) 100 Unless Otherwise Specified (Continued) ICE , COLLECTOR TO EMITTER CURRENT (A) 300 250 200 150 TC = -55oC 100 50 0 0 1 2 3 4 5 6 VCE , COLLECTOR TO EMITTER VOLTAGE (V) TC = 150oC DUTY CYCLE