HGTG40N60A4

HGTG40N60A4 TM Data Sheet April 2000 File Number 4782.2 600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49347. Features • 100kHz Operation At 390V, 40A • 200kHz Operation At 390V, 20A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o • Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG40N60A4 PACKAGE TO-247 BRAND 40N60A4 COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 HGTG40N60A4 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG40N60A4 Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 600 75 63 300 ±20 ±30 200A at 600V 625 5 -55 to 150 260 UNITS V A A A V V W W/oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications PARAMETER Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TJ = 25oC TJ = 125oC Collector to Emitter Saturation Voltage VCE(SAT) IC = 40A, VGE = 15V TJ = 25oC TJ = 125oC MIN 600 20 4.5 200 TYP 1.7 1.5 5.6 8.5 350 450 25 18 145 35 400 850 370 MAX 250 3.0 2.7 2.0 7 ±250 405 520 µA mA V V V nA A V nC nC ns ns ns ns µJ µJ µJ UNITS V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP Qg(ON) IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 2.2Ω, VGE = 15V L = 100µH, VCE = 600V IC = 40A, VCE = 0.5 BVCES IC = 40A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IGBT and Diode at TJ = 25oC ICE = 40A VCE = 0.65 BVCES VGE = 15V RG = 2.2Ω L = 200µH Test Circuit (Figure 20) 4-2 HGTG40N60A4 Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2) Thermal Resistance Junction To Case NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC TEST CONDITIONS IGBT and Diode at TJ = 125oC ICE = 40A VCE = 0.65 BVCES VGE = 15V RG = 2.2Ω L = 200µH Test Circuit (Figure 20) MIN TYP 27 20 185 55 400 1220 700 MAX 225 95 1400 800 0.2 UNITS ns ns ns ns µJ µJ µJ oC/W Typical Performance Curves 80 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 225 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 15V 70 60 50 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 PACKAGE LIMITED TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 4-3 HGTG40N60A4 Typical Performance Curves 300 fMAX, OPERATING FREQUENCY (kHz) 200 TC 75oC VGE 15V Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) VCE = 390V, RG = 2.2Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) 2.2 80 12 1200 10 ISC 8 1000 100 800 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.2oC/W, SEE NOTES RG = 2.2Ω, L = 200µH, VCE = 390V 10 3 10 40 70 ICE, COLLECTOR TO EMITTER CURRENT (A) 6 tSC 4 600 400 2 10 11 12 13 14 15 16 VGE , GATE TO EMITTER VOLTAGE (V) 200 FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE, COLLECTOR TO EMITTER CURRENT (A) 80 70 60 50 40 30 20 10 0 0 ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 80 70 60 50 40 30 20 10 0 0 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs TJ = 125oC TJ = 125oC TJ = 25oC TJ = 150oC TJ = 150oC TJ = 25oC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5500 EON2 , TURN-ON ENERGY LOSS (µJ) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 EOFF, TURN-OFF ENERGY LOSS (µJ) RG = 2.2Ω, L = 200µH, VCE = 390V 1800 1600 1400 1200 1000 800 600 400 200 0 0 10 20 30 TJ = 25oC, VGE = 12V OR 15V 40 50 60 70 TJ = 125oC, VGE = 12V OR 15V RG = 2.2Ω, L = 200µH, VCE = 390V TJ = 125oC, VGE = 12V, VGE = 15V TJ = 25oC, VGE = 12V, VGE = 15V 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4-4 HGTG40N60A4 Typical Performance Curves 42 td(ON)I, TURN-ON DELAY TIME (ns) 40 38 36 34 32 30 28 26 24 22 0 10 20 30 TJ = 25oC, TJ = 125oC, VGE = 15V 40 50 60 70 80 0 0 RG = 2.2Ω, L = 200µH, VCE = 390V TJ = 25oC, TJ = 125oC, VGE = 15V trI , RISE TIME (ns) Unless Otherwise Specified (Continued) 120 100 80 60 40 20 TJ = 25oC, TJ = 125oC, VGE = 15V 10 20 30 40 50 60 70 ICE , COLLECTOR TO EMITTER CURRENT (A) 80 RG = 2.2Ω, L = 200µH, VCE = 390V TJ = 125oC, TJ = 25oC, VGE = 12V ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 190 td(OFF)I , TURN-OFF DELAY TIME (ns) 180 170 RG = 2.2Ω, L = 200µH, VCE = 390V 70 65 tfI , FALL TIME (ns) 60 55 50 45 40 35 30 0 RG = 2.2Ω, L = 200µH, VCE = 390V TJ = 125oC, VGE = 12V OR 15V VGE = 12V, VGE = 15V, TJ = 125oC 160 150 VGE = 12V OR 15V, TJ = 25oC 140 130 TJ = 25oC, VGE = 12V OR 15V 0 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 400 350 300 250 200 150 100 50 0 6 7 8 9 10 VGE, GATE TO EMITTER VOLTAGE (V) 11 TJ = -55oC TJ = 25oC VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 16 14 12 10 8 6 4 2 0 0 IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC VCE = 600V VCE = 400V TJ = 125oC VCE = 200V 50 100 150 200 250 300 350 400 QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS 4-5 HGTG40N60A4 Typical Performance Curves ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 6 5 4 3 2 1 0 25 50 125 75 100 TC , CASE TEMPERATURE (oC) 150 Unless Otherwise Specified (Continued) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 100 TJ = 125oC, L = 200µH VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 80A ICE = 40A 1 ICE = 20A TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 80A 10 ICE = 40A ICE = 20A 0.1 1 10 100 RG, GATE RESISTANCE (Ω) 500 FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE VCE, COLLECTOR TO EMITTER VOLTAGE (V) 14 FREQUENCY = 1MHz 12 C, CAPACITANCE (nF) 10 8 6 4 COES 2 CRES 0 0 10 20 30 40 50 60 70 80 90 100 2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs, TJ = 25oC 2.3 2.2 ICE = 80A 2.1 ICE = 40A 2.0 ICE = 20A 1.9 8 9 10 11 12 13 14 15 16 CIES VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 100 0.50 0.20 0.10 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 19. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 4-6 HGTG40N60A4 Test Circuit and Waveforms HGT1Y40N60A4D 90% VGE L = 200µH VCE RG = 2.2Ω + VDD = 390V ICE 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 4-7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc. HGTG40N60A4 TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE E A ØS Q ØR D TERM. 4 ØP INCHES SYMBOL A b b1 b2 c D MIN 0.180 0.046 0.060 0.095 0.020 0.800 0.605 MAX 0.190 0.051 0.070 0.105 0.026 0.820 0.625 MILLIMETERS MIN 4.58 1.17 1.53 2.42 0.51 20.32 15.37 MAX 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES 2, 3 1, 2 1, 2 1, 2, 3 4 4 5 1 - L1 L b1 b2 c b 1 2 3 J1 3 2 1 E e e1 J1 L L1 ØP Q ØR ØS 0.219 TYP 0.438 BSC 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270 5.56 TYP 11.12 BSC 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85 e e1 BACK VIEW NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-8