HGTG40N60B3

HGTG40N60B3 Data Sheet January 2000 File Number 3943.3 70A, 600V, UFS Series N-Channel IGBT The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49052. Features • 70A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG40N60B3 PACKAGE TO-247 BRAND G40N60B3 COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTG40N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG40N60B3 Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 70 40 330 ±20 ±30 100A at 600V 290 2.33 100 -55 to 150 260 2 10 W W/oC mJ oC oC UNITS V 600 A A A V V µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω. S Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 15 3.0 VCE = 480V VCE = 600V 200 100 TYP 25 1.4 1.5 4.8 MAX 100 6.0 2.0 2.3 6.0 ±100 UNITS V V µA mA V V V nA A A Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC RG = 3Ω VGE = 15V L = 100µH Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 7.5 250 335 47 35 170 50 1050 800 330 435 200 100 1200 1400 V nC nC ns ns ns ns µJ µJ Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1) td(ON)I trI td(OFF)I tfI EON EOFF IGBT and Diode Both at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 100µH Test Circuit (Figure 17) 2 HGTG40N60B3 Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1) Thermal Resistance Junction To Case NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF RθJC TEST CONDITIONS IGBT and Diode Both at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 100µH Test Circuit (Figure 17) MIN TYP 47 35 285 100 1850 2000 MAX 375 175 0.43 UNITS ns ns ns ns µJ µJ oC/W Typical Performance Curves 100 ICE , DC COLLECTOR CURRENT (A) (Unless Otherwise Specified) ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 80 250 TJ = 150oC, RG = 3Ω, VGE = 15V 200 60 PACKAGE LIMITED 40 150 100 20 50 0 25 50 75 100 125 150 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 100 TC VGE VCE = 360V, RG = 3Ω, TJ = 125oC 16 14 12 10 8 6 4 10 tSC ISC 800 700 600 500 400 300 200 15 75oC 15V 75oC 10V 110oC 15V 110oC 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43oC/W, SEE NOTES 1 10 20 40 60 80 100 11 12 13 14 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 3Ω, L = 100µH, V CE = 480V tSC , SHORT CIRCUIT WITHSTAND TIME (µs) 18 900 HGTG40N60B3 Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 200 DUTY CYCLE