HIP2100

® HIP2100 Data Sheet April 2, 2010 FN4022.14 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply. Features • Drives N-Channel MOSFET Half Bridge • SOIC, EPSOIC, QFN and DFN Package Options • SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221 • Pb-Free Product Available (RoHS Compliant) • Bootstrap Supply Max Voltage to 114VDC • On-Chip 1Ω Bootstrap Diode • Fast Propagation Times for Multi-MHz Circuits • Drives 1000pF Load with Rise and Fall Times Typ. 10ns • CMOS Input Thresholds for Improved Noise Immunity • Independent Inputs for Non-Half Bridge Topologies • No Start-Up Problems Ordering Information PART NUMBER (Note 1) HIP2100IB HIP2100IBZ (Note 2) PART MARKING 2100 IB 2100 IBZ TEMP. RANGE (°C) PACKAGE PKG. DWG. # M8.15 M8.15 M8.15C • Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt • Low Power Consumption • Wide Supply Range • Supply Undervoltage Protection • 3Ω Driver Output Resistance • QFN/DFN Package: - Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline - Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile -40 to +125 8 Ld SOIC -40 to +125 8 Ld SOIC (Pb-free) -40 to +125 8 Ld EPSOIC (Pb-free) HIP2100EIBZ 2100 EIBZ (Note 2) HIP2100IRZ (Note 2) HIP 2100IRZ -40 to +125 16 Ld 5x5 QFN L16.5x5 (Pb-free) -40 to +125 12 Ld 4x4 DFN L12.4x4A (Pb-free) HIP2100IR4Z 21 00IR4Z (Note 2) NOTES: 1. Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pbfree material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pbfree requirements of IPC/JEDEC J STD-020. Applications • Telecom Half Bridge Power Supplies • Avionics DC/DC Converters • Two-Switch Forward Converters • Active Clamp Forward Converters 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2004, 2010. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. HIP2100 Pinouts HIP2100 (8 LD SOIC, EPSOIC) TOP VIEW VDD HB HO HS 1 2 3 4 EPAD 8 7 6 5 LO VSS LI HI VDD NC NC HB HO HS 1 2 3 4 5 6 EPAD HIP2100IR4 (12 LD DFN) TOP VIEW 12 LO 11 VSS 10 NC 9 8 7 NC LI HI NC 1 HB 2 HIP2100 (16 LD QFN) TOP VIEW VDD NC NC 13 12 NC EPAD HO 3 NC 4 5 NC 6 HS 7 HI 8 NC 11 VSS 10 LI 9 NC LO 14 16 15 NOTE: EPAD = Exposed PAD. Application Block Diagram +12V +100V VDD HB SECONDARY CIRCUIT HI CONTROL PWM CONTROLLER LI DRIVE HI HO HS DRIVE LO LO HIP2100 VSS REFERENCE AND ISOLATION 2 FN4022.14 HIP2100 Functional Block Diagram HB VDD UNDER VOLTAGE LEVEL SHIFT DRIVER HS HI HO UNDER VOLTAGE DRIVER LI VSS LO EPAD (EPSOIC, QFN and DFN PACKAGES ONLY) *EPAD = Exposed Pad. The EPAD is electrically isolated from all other pins. For best thermal performance connect the EPAD to the PCB power ground plane. +48V +12V PWM HIP2100 SECONDARY CIRCUIT ISOLATION FIGURE 1. TWO-SWITCH FORWARD CONVERTER +48V +12V SECONDARY CIRCUIT PWM HIP2100 ISOLATION FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE CLAMP 3 FN4022.14 HIP2100 Absolute Maximum Ratings Supply Voltage, VDD, VHB-VHS (Notes 3, 4) . . . . . . . . -0.3V to 18V LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V Voltage on HO (Note 4) . . . . . . . . . . . . . . . VHS -0.3V to VHB +0.3V Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V Average Current in VDD to HB diode . . . . . . . . . . . . . . . . . . . 100mA ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV) Thermal Information Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) SOIC (Note 5) . . . . . . . . . . . . . . . . . . . 95 50 EPSOIC (Note 6) . . . . . . . . . . . . . . . . . 40 3.0 QFN (Note 6) . . . . . . . . . . . . . . . . . . . . 37 6.5 DFN (Note 6) . . . . . . . . . . . . . . . . . . . . 40 3.0 Max Power Dissipation at +25°C in Free Air (SOIC, Note 5) . . . . 1.3W Max Power Dissipation at +25°C in Free Air (EPSOIC, Note 6) . . 3.1W Max Power Dissipation at +25°C in Free Air (QFN, Note 6) . . . . . 3.3W Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Maximum Recommended Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . +9V to 14.0VDC Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS. . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V Voltage on HB . . . VHS +8V to VHS +14.0V and VDD -1V to VDD +100V HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .