HS-2400RH

HS-2400RH TM Data Sheet August 2000 File Number 4027.2 Radiation Hardened PRAM Four Channel Programmable Operational Amplifier HS-2400RH is a four-channel programmable amplifier providing a level of versatility unsurpassed by any other monolithic operational amplifier. Versatility is achieved by employing four input amplifier channels, any one (or none) of which may be electronically selected and connected to a single output stage through DTL/TTL compatible address inputs. The device formed by the output and the selected pair of inputs is an op amp which delivers excellent slew rate, gain bandwidth and power bandwidth performance. Other advantageous features for these dielectrically isolated amplifiers include high voltage gain and input impedance coupled with low input offset voltage and offset current. External compensation is not required on this device at closed loop gains greater than 10. Each channel of the HS-2400RH can be controlled and operated with suitable feedback networks in any of the standard op amp configurations. This specialization makes these amplifiers excellent components for multiplexing signal selection and mathematical function designs. With 20V/µs slew rate, 20MHz gain bandwidth and low input bias currents make these devices ideal building blocks for signal generators, active filters and data acquisition designs. Programmability, coupled with 9mV maximum offset voltage and 50nA offset current, make these amplifiers outstanding components for signal conditioning circuits. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95684. A “hot-link” is provided on our homepage for downloading. http://www.intersil.com/spacedefense/space.htm Features • Electrically Screened to SMD # 5962-95684 • QML Qualified per MIL-PRF-38535 Requirements • Total Dose . . . . . . . . . . . . . . . . . . . . . . . 10 krad(Si) (Max) • Digital Programmability • High Rate Slew - Uncompensated . . . . . . . . . . . . . . . . . . . . . .20V/µs Min - Compensated . . . . . . . . . . . . . . . . . . . . . . . . .6V/µs Min • Wide Gain Bandwidth - Uncompensated . . . . . . . . . . . . . . . . . . . . . .20MHz Min - Compensated . . . . . . . . . . . . . . . . . . . . . . . . .4MHz Min • High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50kV/V Min • Low Offset Current . . . . . . . . . . . . . . . . . . . . . . .50nA Max • Single Capacitor Compensation for Unity Gain • DTL/TTL Compatible Inputs Applications • Signal Selection/Multiplexing • Operational Amplifier Gain Stage • Oscillator Frequency • Filter Characteristics • Add-Subtract Functions • Integrator Characteristics • Comparator Levels Pinout 16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE (CERDIP) MIL-STD-1835 GDIP-T16 TOP VIEW Ordering Information +IN3 1 ORDERING NUMBER 5962D9568401VEA INTERNAL MKT. NUMBER HS1-2400RH-Q TEMP. RANGE (oC) -55 to 125 -IN3 2 + 3 3 - 16 D0 DECODE CONTROL 15 D1 14 ENABLE 13 GND 12 11 COMP V+ +IN4 3 -IN4 -IN1 4 5 + 4 - +IN1 6 -IN2 7 1 + +IN2 8 2 + OUTPUT AMP 10 OUT 9 V- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 HS-2400RH Test Waveforms +5.0V +5.0V INPUT -5.0V +SR -SR -5.0V ∆T SR = ∆T ∆T ∆T +5.0V -5.0V ∆V OUTPUT ∆V -5.0V +5.0V SLEW RATE WAVEFORMS VFINAL = +200mV +200mV INPUT 0V tR , +OS tF, -OS -200mV 0V VPEAK 90% OUTPUT 10% 0V 90% -200mV VPEAK tR tF 0V 10% OVERSHOOT, RISE AND FALL TIME WAVEFORMS Burn-In Circuit HS-2400RH CERDIP 1 2 + 3 3 16 DECODE CONTROL 15 14 13 12 11 10 OUTPUT AMP 9 D0 D1 ENABLE GND COMP V+ OUT VD2 C2 C3 D1 C1 V+ f0 f1 f2 NOTES: 1. R1 = 100kΩ,/Socket, 5%, 1/4W (Min). 2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min). 3. C3 = 0.001µF/Socket, 10%. 4. D1 = D2 = 1N4002 or equivalent (per board). 5. |(V+) - (V-)| = 30V. 6. Duty Cycle 50% for: f0 = 100kHz, f1 = 50kHz, f2 = 25kHz 3 4 5 6 7 8 R1 + 4 - 1 + 2 + V- Irradiation Circuit R 1 2 3 4 16 R 15 R 14 13 12 11 C 7 8 GND 10 9 C GND GND V2 V1 NOTES: 7. V1 = +15V. 8. V2 = -15V. 9. R = 1 Meg Ω. 10. C = 0.1µF. 5 6 2 HS-2400RH Die Characteristics DIE DIMENSIONS: 88 mils x 67 mils x 19 mils ±1 mils 2240µm x 1710µm x 483µm ±25.4µm INTERFACE MATERIALS: Top Metallization: Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ Glassivation: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.). Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Process: Bipolar Dielectric Isolation Substrate: Potential (Powered Up) Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: < 2 x 105A/cm2 Transistor Count: 251 Metallization Mask Layout HS-2400RH -IN2 +IN1 -IN1 -IN4 +IN4 -IN3 +IN2 +IN3 V- D0 OUT V+ COMP GND ENABLE D1 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3