HS-OP470AR

HS-OP470ARH February 1998 Radiation Hardened, Very Low Noise Quad Operational Amplifier Description The HS-OP470ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. Its excellent noise characteristics coupled with an unique array of dynamic specifications make this amplifier well-suited for a variety of satellite system applications. Dielectrically isolated, bipolar processing makes this device immune to Single Event Latch-up. The HS-OP470ARH shows almost no change in offset voltage after exposure to 100K RAD(Si) gamma radiation, with only a minor increase in current. Complementing these specifications is a post radiation open loop gain in excess of 40kV/V. This quad operational amplifier is available in an industry standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). SMD numbers must be used when ordering. Detailed Electrical Specifications for this are contained in SMD 5962-98533. A “hot-link” is provided on our homepage with instructions for downloading. http://www.intersil.com/data/sm/index.htm Features • QML Qualified Per MIL-PRF-38535 Requirements • Radiation Environment - Total Dose . . . . . . . . . . . . . . . . . . . . . . 1 x 105 RAD(Si) • Low Noise - At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 4.3nV/√Hz (Typ) - At 1kHz . . . . . . . . . . . . . . . . . . . . . . . .0.6pA/√Hz (Typ) • Low Offset Voltage. . . . . . . . . . . . . . . . . . . 2.1mV (Max) • High Slew Rate . . . . . . . . . . . . . . . . . . . . . 1.7V/µs (Min) • Gain Bandwidth Product . . . . . . . . . . . . . 8.0MHz (Typ) Applications • High Q, Active Filters • Voltage Regulators • Integrators • Signal Generators • Voltage References • Space Environments Ordering Information SMD PART NUMBER 5962R9853301VXC N/A INTERSIL PART NUMBER HS9-OP470ARH-Q HS9-OP470ARH/Sample TEMP. RANGE (oC) -55 to 125 25 PACKAGE 14 Ld Flatpack 14 Ld Flatpack CASE OUTLINE CDFP3-F14 CDFP3-F14 Pinout HS-OP470ARH (FLATPACK) TOP VIEW OUT 1 -IN1 +IN1 V+ +IN2 -IN2 OUT 2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT 4 -IN4 +IN4 V+IN3 -IN3 OUT 3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 4471 1 HS-OP470ARH Metallization Mask Layout DIE DIMENSIONS: 95 mils x 99 mils x 19 mils ±1 mil (2420µm x 2530µm x 483µm ±25.4µm) METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ SUBSTRATE POTENTIAL (Powered Up): Unbiased BACKSIDE FINISH: Silicon +IN2 V+ PASSIVATION: Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ WORST CASE CURRENT DENSITY: