HS1-303RH-T

HS-303RH-T TM Data Sheet November 2001 File Number 4 602.2 Radiation Hardened CMOS Dual SPDT Analog Switch Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The HS-303RH-T analog switch is a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free operation. Improved total dose hardness is obtained by layout (thin oxide tabs extending to a channel stop) and processing (hardened gate oxide). This switch offers lowresistance switching performance for analog voltages up to the supply rails. “ON” resistance is low and stays reasonably constant over the full range of operating voltage and current. “ON” resistance also stays reasonably constant when exposed to radiation, being typically 30Ω pre-rad and 35Ω post 100kRAD(Si). Break-before-make switching is controlled by 5V digital inputs. Features • QML Class T, Per MIL-PRF-38535 • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) • No Latch-Up, Dielectrically Isolated Device Islands • Pin for Pin Compatible with Intersil HI-303 Series Analog Switches • Analog Signal Range 15V • Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad) • Low rON . . . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad) • Low Operating Power . . . . . . . . . . 100µA (Max, Post Rad) Pinouts HS1-303RH-T (SBDIP), CDIP2-T14 TOP VIEW NC S3 D3 1 2 3 4 5 6 7 14 V+ 13 S4 12 D4 11 D2 10 S2 9 IN2 8 V- Specifications Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed electrical specifications for the HS-303RH-T are contained in SMD 5962-95813. A “hot-link” is provided from our website for downloading. Intersil’s Quality Management Plan (QM Plan), listing all Class T screening operations, is available on our website. NC D1 S1 IN1 GND HS9-303RH-T (FLATPACK) CDFP3-F14 TOP VIEW 1 S3 2 3 4 5 6 7 14 13 12 11 10 9 8 V+ S4 D4 D2 S2 IN2 V- Ordering Information ORDERING NUMBER 5962R9581301TCC 5962R9581301TXC PART NUMBER HS1-303RH-T HS9-303RH-T TEMP. RANGE (oC) -55 to 125 -55 to 125 D3 D1 S1 IN1 GND NOTE: Minimum order quantity for -T is 150 units through distribution, or 450 units direct. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2001. All Rights Reserved Satellite Applications Flow™ (SAF) is a trademark of Intersil Americas Inc. Functional Diagram SBDIP TRUTH TABLE IN N P D LOGIC 0 1 SW1AND SW2 OFF ON SW3 AND SW4 ON OFF Die Characteristics DIE DIMENSIONS: (2130µm x 1930µm x 279µm ±25.4µm) 84 x 76 x 11mils ±1mil METALLIZATION: Type: Al Thickness: 12.5kÅ ±2kÅ SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Gold PASSIVATION: Type: Silox (SiO2) Thickness: 8kÅ ±1kÅ WORST CASE CURRENT DENSITY: < 2.0e5 A/cm2 TRANSISTOR COUNT: 76 PROCESS: Metal Gate CMOS, Dielectric Isolation Metallization Mask Layout HS-303RH-T S3 V+ S4 D3 D4 D1 D2 S1 S2 IN1 IN2 NC All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 2 GND V-