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HS1-6254RH-Q

HS1-6254RH-Q

  • 厂商:

    INTERSIL(Intersil)

  • 封装:

  • 描述:

    HS1-6254RH-Q - Radiation Hardened Ultra High Frequency NPN Transistor Array - Intersil Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
HS1-6254RH-Q 数据手册
HS-6254RH Data Sheet August 1999 File Number 4425.2 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. The high FT (8GHz) and low noise figure (3.5dB) of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the five transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-97641. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp Features • Electrically Screened to SMD # 5962-97641 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105RAD(Si) - SEL Immune . . . . . . . Bonded Wafer Dielectric Isolation • Gain Bandwidth Product (FT) . . . . . . . . . . . . . .8GHz (Typ) • Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ) • Early Voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ) • Noise Figure (50Ω) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ) • Collector-to-Collector Leakage. . . . . . . . . . . . .
HS1-6254RH-Q
1. 物料型号: - HS0-6254RH-Q - 5962F9764101VEA - 5962F9764101VEC - 5962F9764101VXC - HS1-6254RH/SAMPLE

2. 器件简介: HS-6254RH是一个抗辐射加固的超高频NPN晶体管阵列,包含五个NPN晶体管。该产品采用键合晶片、介质隔离制造工艺,提供对单事件锁定的免疫能力和在任何辐射环境中的高可靠性能。高截止频率(8GHz)和低噪声系数(3.5dB)使其非常适合用于高频放大器和混频器应用。

3. 引脚分配: 文档提供了HS1-6254RH (CERDIP) GDIP1-T16和HS1-6254RH (SBDIP) CDIP2-T16的顶视图引脚图,以及HS9-6254RH (FLATPACK) CDFP4-F16的顶视图引脚图。

4. 参数特性: - 电性能筛选至SMD #5962-97641 - 符合MIL-PRF-38535要求的qml资格 - 辐射环境:伽马剂量(γ)3 x 10^5RAD(Si),SEL免疫(键合晶片介质隔离) - 增益带宽积(FT)8GHz(典型值) - 电流增益(hFE)70(典型值) - 早期电压(VA)50V(典型值) - 噪声系数(50Ω)在1GHz时为3.5dB(典型值) - 集电极到集电极漏电流<1pA(典型值)

5. 功能详解: HS-6254RH的单片结构提供了尽可能接近的电气和热匹配。为每个晶体管的每个终端提供访问,以实现最大的应用灵活性。

6. 应用信息: - 高频放大器和混频器(参考应用说明9315) - 高频转换器 - 同步检波器

7. 封装信息: - HS0-6254RH-Q:25°C温度范围 - 5962F9764101VEA、5962F9764101VEC、5962F9764101VXC:-55至125°C温度范围 - HS1-6254RH/SAMPLE:-55至125°C温度范围
HS1-6254RH-Q 价格&库存

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