HS9-4424BRH

HS-4424RH, HS-4424BRH Data Sheet June 1999 File Number 4739.1 Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers The Radiation Hardened HS-4424RH and HS-4424BRH are non-inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages up to 18V. The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs, like our Rad Hard FS055, in high frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low voltage lock-out circuit that puts the outputs into a three-state mode when the supply voltage drops below 10V for the HS-4424RH and 7.5V for the HS-4424BRH. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-99560. A “hot-link” is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp Features • Electrically Screened to DESC SMD # 5962-99560 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Total Dose (Max). . . . . . . . . . . . . . . . . . 3 x 105 RAD(SI) - Latch-Up Immune - Low Dose Rate Immune • IPEAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (Min) • Matched Rise and Fall Times (CL = 4300pF). . . 75ns (Max) • Low Voltage Lock-Out Feature - HS-4424RH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 10.0V - HS-4424BRH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 7.5V • Wide Supply Voltage Range. . . . . . . . . . . . . . . 12V to 18V • Prop Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns (Max) • Consistent Delay Times with VCC Changes • Low Power Consumption - 40mW with Inputs High - 20mW with Inputs Low • Low Equivalent Input Capacitance . . . . . . . . . .3.2pF (Typ) • ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . >4000V Applications • Switching Power Supplies • DC/DC Converters • Motor Controllers Ordering Information ORDERING NUMBER 5962F9956001VXC 5962F9956001QXC HS9-4424RH/Proto 5962F9956002VXC 5962F9956002QXC HS9-4424BRH/Proto INTERNAL MKT. NUMBER HS9-4424RH-Q HS9-4424RH-8 HS9-4424RH/Proto HS9-4424BRH-Q HS9-4424BRH-8 HS9-4424BRH/Proto TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 -55 to 125 Pinout HS-4424RH, HS-4424BRH (FLATPACK CDFP4-F16) TOP VIEW NC IN A NC GND A GND B NC IN B NC 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 NC OUT A OUT A VCC VCC OUT B OUT B NC NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are doublebonded to their same electrical points on the die. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-4424RH, HS-4424BRH Die Characteristics DIE DIMENSIONS: 4890µm x 3370µm (193 mils x 133 mils) Thickness: 483µm ± 25.4µm (19 mils ± 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ ± 1.0kÅ Top Metallization: Type: AlSiCu Thickness: 16.0kÅ ± 2kÅ Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: