ISL2110

® ISL2110, ISL2111 Data Sheet August 11, 2009 FN6295.4 100V, 3A/4A Peak, High Frequency Half-Bridge Drivers The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/ pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the VDD supply rail. Features • Drives N-Channel MOSFET Half-Bridge • SOIC, DFN and TDFN Package Options • SOIC, DFN and TDFN Packages Compliant with 100V Conductor Spacing Guidelines per IPC-2221 • Pb-Free (RoHS Compliant) • Bootstrap Supply Max Voltage to 114VDC • On-Chip 1Ω Bootstrap Diode • Fast Propagation Times for Multi-MHz Circuits • Drives 1nF Load with Typical Rise/Fall Times of 9ns/7.5ns • CMOS Compatible Input Thresholds (ISL2110) • 3.3V/TTL Compatible Input Thresholds (ISL2111) • Independent Inputs Provide Flexibility Ordering Information PART NUMBER (Note) ISL2110ABZ* PART MARKING 2110 ABZ TEMP RANGE (°C) PACKAGE (Pb-Free) PKG. DWG. # M8.15 • No Start-Up Problems • Outputs Unaffected by Supply Glitches, HS Ringing Below Ground or HS Slewing at High dv/dt • Low Power Consumption • Wide Supply Voltage Range (8V to 14V) • Supply Undervoltage Protection • 1.6Ω/1Ω Typical Output Pull-Up/Pull-Down Resistance -40 to +125 8 Ld SOIC ISL2110AR4Z* 211 0AR4Z -40 to +125 12 Ld 4x4 DFN L12.4x4A ISL2111ABZ* 2111 ABZ -40 to +125 8 Ld SOIC M8.15 ISL2111AR4Z* 211 1AR4Z -40 to +125 12 Ld 4x4 DFN L12.4x4A ISL2111ARTZ* 211 1ARTZ -40 to +125 10 Ld 4x4 TDFN L10.4x4 *Add “-T” suffix for Tape and Reel packing option. Please refer to TB347 for details on reel specifications NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020 Applications • Telecom Half-Bridge DC/DC Converters • Telecom Full-Bridge DC/DC Converters • Two-Switch Forward Converters • Active-Clamp Forward Converters • Class-D Audio Amplifiers 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2006-2008, 2009. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. ISL2110, ISL2111 Pinouts ISL2111 (10 LD 4X4 TDFN) TOP VIEW VDD HB HO HS NC 10 LO 9 VSS 8 LI 7 HI 6 NC ISL2110, ISL2111 (12 LD 4X4 DFN) TOP VIEW 1 2 3 4 5 VDD NC NC HB HO HS 1 2 3 EPAD* 4 5 6 12 LO 11 VSS 10 NC 9 8 7 *EPAD = Exposed PAD NC LI HI ISL2110, ISL2111 (8 LD SOIC) TOP VIEW VDD HB HO HS 1 2 3 4 8 7 6 5 LO VSS LI HI Application Block Diagram +12V +100V VDD HB SECONDARY CIRCUIT HI CONTROL PWM CONTROLLER LI DRIVE HI HO HS DRIVE LO ISL2110 ISL2111 VSS LO REFERENCE AND ISOLATION 2 FN6295.4 August 11, 2009 ISL2110, ISL2111 Functional Block Diagram HB VDD UNDER VOLTAGE LEVEL SHIFT DRIVER HS HI ISL2111 HO ISL2111 LI VSS UNDER VOLTAGE DRIVER LO EPAD (DFN Package Only) *EPAD = Exposed Pad. The EPAD is electrically isolated from all other pins. For best thermal performance connect the EPAD to the PCB power ground plane. +48V +12V PWM ISL2110 ISL2111 SECONDARY CIRCUIT ISOLATION FIGURE 1. TWO-SWITCH FORWARD CONVERTER +48V +12V SECONDARY CIRCUIT PWM ISL2110 ISL2111 ISOLATION FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE-CLAMP 3 FN6295.4 August 11, 2009 ISL2110, ISL2111 Absolute Maximum Ratings Supply Voltage, VDD, VHB - VHS (Notes 1, 2) . . . . . . . . -0.3V to 18V LI and HI Voltages (Note 2) . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on LO (Note 2) . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on HO (Note 2) . . . . . . . . . . . . . . VHS - 0.3V to VHB + 0.3V Voltage on HS (Continuous) (Note 2) . . . . . . . . . . . . . . -1V to 110V Voltage on HB (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V Average Current in VDD to HB Diode . . . . . . . . . . . . . . . . . . 100mA Thermal Information Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) 8 Ld SOIC (Note 3) . . . . . . . . . . . . . . . 95 N/A 10 Ld TDFN (Notes 4, 5) . . . . . . . . . . . 42 5.5 12 Ld DFN (Notes 4, 5) . . . . . . . . . . . . 40 5.5 Max Power Dissipation at +25°C in Free Air 8 Ld SOIC (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W 10 Ld TDFN (Notes 4, 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W 12 Ld DFN (Notes 4, 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W Storage Temperature Range . . . . . . . . . . . . . . . . . . . -65°C to +150°C Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Maximum Recommended Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V to 14V Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V Voltage on HB . . VHS + 7V to VHS + 14V and VDD - 1V to VDD + 100V HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .