ISL6329IRZ-T

ISL6329IRZ-T

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    VFQFN60_EP

  • 描述:

    IC CTRLR PWM SYNC BUCK DL 60QFN

  • 数据手册
  • 价格&库存
ISL6329IRZ-T 数据手册
DATASHEET ISL6329 FN7800 Rev 0.00 April 19, 2011 Dual PWM Controller Powering AMD SVI Split-Plane Processors The ISL6329 dual PWM controller delivers high efficiency and tight regulation from two synchronous buck DC/DC converters. The ISL6329 supports power control of AMD processors, which operate from a serial VID interface (SVI). The dual output ISL6329 features a multiphase controller to support the Core voltage (VDD) and a single phase controller to power the Northbridge (VDDNB). A precision core voltage regulation system is provided by a one-to-six-phase PWM voltage regulator (VR) controller. The integration of two power MOSFET drivers adds flexibility in layout and reduces the number of external components in the multi-phase section. A single phase PWM controller with integrated driver provides a second precision voltage regulation system for the Northbridge portion of the processor. This monolithic, dual controller with integrated driver solution provides a cost and space saving power management solution. For applications that benefit from load line programming to reduce bulk output capacitors, the ISL6329 features temperature compensated output voltage droop. The multiphase portion also includes advanced control loop features for optimal transient response to load application and removal. One of these features is highly accurate, fully differential, continuous DCR current sensing for load line programming and channel current balance. Dual edge modulation is another unique feature, allowing for quicker initial response to high di/dt load transients. The ISL6329 supports Power Savings Mode by dropping the number of phases to one or two when the PSI_L bit is set. For even greater power efficiency, diode emulation and gate voltage optimization are implemented in PSI mode. Features • Processor Core Voltage Via Integrated Multiphase Power Conversion • Configuration Flexibility - 1 or 2-Phase Operation with Internal Drivers - 3,4,5 or 6-Phase Operation with External PWM Drivers • PSI_L Support - Phase Shedding for Improved Efficiency at Light Load - Diode Emulation in PSI mode - Gate Voltage Optimization • I2C Interface with 8 Selectable Addresses • Precision Core Voltage Regulation - Differential Remote Voltage Sensing - 0.6% System Accuracy Over-Temperature • Optimal Processor Core Voltage Transient Response - Adaptive Phase Alignment (APA) - Active Pulse Positioning Modulation • Fully Differential, Continuous DCR Current Sensing - Accurate Load Line Programming - Precision Channel Current Balancing - Temperature Compensated • Serial VID Interface Handles up to 3.4MHz Clock Rates • Two Level Overcurrent Protection Allows for High Current Throttling (IDD_SPIKE) • Multi-tiered Overvoltage Protection • Selectable Switching Frequency up to 1MHz • Simultaneous Digital Soft-Start of Both Outputs • Pb-Free (RoHS Compliant) FN7800 Rev 0.00 April 19, 2011 Page 1 of 38 ISL6329 Integrated Driver Block Diagram Channels 1 and 2 Gate Drive PVCC GVOT BOOT UGATE PWM 20kΩ SOFT-START AND FAULT LOGIC GATE CONTROL LOGIC SHOOTTHROUGH PROTECTION PHASE 10kΩ LGATE Northbridge Gate Drive PVCC BOOT UGATE PWM 20kΩ SOFT-START AND FAULT LOGIC GATE CONTROL LOGIC SHOOTTHROUGH PROTECTION PHASE 10kΩ LGATE FN7800 Rev 0.00 April 19, 2011 Page 2 of 38 ISL6329 Controller Block Diagram COMP_NB FB_NB RGND VSEN_NB  NB_REF ISEN_NB+ ISEN_NB- BOOT_NB E/A CURRENT SENSE UV LOGIC OV LOGIC MOSFET DRIVER RAMP I2C I2C_ADDR SCL EN_12V ENABLE LOGIC OFFSET CH3_OFF PSI VCC GVOT SOFT-START AND FB + RGND FAULT LOGIC E/A  RGND PWROK VDDIO SVC SVD EN POWER-ON RESET COMP FB_PSI PVCC LDO NB FAULT LOGIC VDDPWRGD OFS + BOOT1 NB_REF DROOP CONTROL SVI SLAVE BUS MOSFET DRIVER LOAD APPLY TRANSIENT ENHANCEMENT LGATE1 DRPCTRL CLOCK AND TRIANGLE WAVE GENERATOR VSEN UV LOGIC FS OC APA PWM1 BOOT2  I_TRIP DUAL OCP OCP PWM2 8 N MOSFET DRIVER  PWM3 PWM4 TCOMP2 ISEN1+ ISEN1ISEN2+ ISEN2ISEN3+ ISEN3- CH1 CURRENT SENSE PWM6 I_AVG ISEN2- ISEN3CH4 CURRENT SENSE ISEN5+ CH5 CURRENT SENSE ISEN6+ ISEN6-  CH3 CURRENT SENSE CHANNEL CURRENT BALANCE 1 N I_TC_IN ISEN4- ISEN5- PH3/PH4/PH5/PH6 POR  CH2 CURRENT SENSE ISEN4+ ISEN4- ISEN5- PWM5 I_TC_IN  1 8 CH6 CURRENT SENSE ISEN6- PHASE2 EN_12V  TEMPERATURE COMPENSATION UGATE2 LGATE2  TCOMP1 UGATE1 PHASE1 OV LOGIC APA PHASE_NB LGATE_NB DAC_OFS NB_OVP CORE_OVP VDDPWRGD_TRIP GVOT_LDO NUM_PHASES_PSI NUM_CYCLES_PSI SDA UGATE_NB CHANNEL DETECT ISEN2ISEN3ISEN4ISEN5ISEN6- PWM3 SIGNAL LOGIC PWM3 PWM4 SIGNAL LOGIC PWM4 PWM5 SIGNAL LOGIC PWM5 PWM6 SIGNAL LOGIC PWM6 GND FN7800 Rev 0.00 April 19, 2011 Page 3 of 38 ISL6329 Typical Application VCC +5V ISL6614 BOOT1 PWM1 PWM2 +12V CS1- ISEN1- CS1+ ISEN1+ CS2- ISEN2- CS2+ ISEN2+ CS3- ISEN3- CS3+ ISEN3+ VCC RSVD TCOMP2 PWM3 PWM4 PWM5 PWM6 PVCC ISEN4ISEN4+ BOOT1 CS5- ISEN5- CS5+ ISEN5+ UGATE1 PHASE1 CS6+ ISEN6+ CS_NB- ISEN_NB- CS_NB+ ISEN_NB+ GND UGATE2 PHASE2 CS4CS4+ PGND LGATE2 ISL6614 BOOT1 PWM1 PWM2 +12V UGATE1 PHASE1 CS1CS1+ CS5CS5+ LGATE1 PWM5 PWM6 +12V PVCC VCC +12V BOOT2 +12V GND UGATE2 PHASE2 LGATE2 FS UGATE2 PHASE2 CS2CS2+ CS6CS6+ VSEN RGND OFS BOOT_NB VDDIO SVC SVD SCL SDA PWROK VDDPWRGD EN APA +12V UGATE_NB PHASE_NB LGATE_NB PGND LGATE2 KELVIN SENSE LINES CORE_FB OCP ENABLE +12V +12V BOOT2 I2C_ADDR +12V PVCC BOOT2 +12V LGATE1 LGATE1 +12V VCC PWM3 PWM4 PWM5 PWM6 ISL6329 CS4+ ISEN6- CS3CS3+ GVOT CS4- CS6- UGATE1 PHASE1 TCOMP1 PWM3 PWM4 CORE CPU CS_NBCS_NB+ NORTHBRIDGE KELVIN SENSE LINE VSEN_NB DRPCTRL FB_NB COMP_NB CORE_FB FB_PSI FB COMP GND FN7800 Rev 0.00 April 19, 2011 Page 4 of 38 ISL6329 Pin Configuration ISEN_NB+ ISEN_NB- ISEN5+ ISEN5- ISEN4+ ISEN4- ISEN3+ ISEN3- I2C_ADDR PVCC LGATE_NB BOOT_NB UGATE_NB PHASE_NB PWM3 ISL6329 (60 LD QFN) TOP VIEW 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 COMP_NB 1 45 PWM4 FB_NB 2 44 PWM5 VSEN_NB 3 43 PWM6 DRPCTRL 4 42 PWROK SVC 5 41 VDDPWRGD SVD 6 40 PHASE1 VDDIO 7 39 UGATE1 61 GND SCL 8 38 BOOT1 SDA 9 37 LGATE1 VCC 10 36 GVOT RSVD 11 35 LGATE2 OFS 12 34 BOOT2 OCP 13 33 UGATE2 20 21 22 23 24 25 26 COMP FS APA ISEN6+ ISEN6- ISEN1+ ISEN1- 27 28 29 30 GND 19 PHASE2 18 ISEN2- 17 ISEN2+ 16 FB 31 EN FB_PSI TCOMP2 15 VSEN 32 GND RGND TCOMP1 14 Functional Pin Descriptions PIN NAME PIN NUMBER COMP_NB 1 Output of the internal error amplifier for the Northbridge regulator. FB_NB 2 Inverting input to the internal error amplifier for the Northbridge regulator. VSEN_NB 3 Non-inverting input to the Northbridge regulator precision differential remote-sense amplifier. This pin should be connected to the remote Northbridge sense pin of the processor, VDDNB_SENSE. DRPCTRL 4 Droop Control for Core and Northbridge. This pin is used to set up one of four user programmable selections via a resistor tied to ground: Core Droop On and Northbridge Droop On; Core Droop Off and Northbridge Droop On, Core Droop On and Northbridge Droop Off; Core Droop Off and Northbridge Droop Off. SVC 5 Serial VID clock input from the AMD processor. SVD 6 Serial VID data bi-directional signal to and from the master device on AMD processor. VDDIO 7 Reference voltage for the SVI communication bus. Connect this pin to the system VDDIO and decouple using a quality 0.1F ceramic capacitor. SCL 8 Connect this pin to the clock signal for the I2C bus, which is a logic level input signal. The clock signal tells the controller when data is available on the I2C bus. FN7800 Rev 0.00 April 19, 2011 DESCRIPTION Page 5 of 38 ISL6329 Functional Pin Descriptions (Continued) PIN NAME PIN NUMBER DESCRIPTION SDA 9 Connect this pin to the bidirectional data line of the I2C bus, which is a logic level input/output signal. All I2C data is sent over this line, including the address of the device the bus is trying to communicate with and what functions the device should perform. VCC 10 VCC is the bias supply for the ICs small-signal circuitry. Connect this pin to a +5V supply and decouple using a quality 0.1µF ceramic capacitor. RSVD 11 RESERVED. Connect this pin directly to the VCC pin. OFS 12 The OFS pin provides a means to program a DC current for generating an offset voltage across the resistor between FB and VSEN. The offset current is generated via an external resistor and precision internal voltage references. The polarity of the offset is selected by connecting the resistor to GND or VCC. For no offset, the OFS pin should be left unconnected. OCP 13 A capacitor from this pin to ground determines the time that the regulator is allowed to service a load current spike that exceeds the internal OCP trip point. TCOMP1, TCOMP2 14, 15 RGND 16 Inverting input to the Core and Northbridge regulator precision differential remote-sense amplifiers. This pin should be connected to the remote ground sense pin of the processor core, VSS_SENSE. VSEN 17 Non-inverting input to the Core regulator precision differential remote-sense amplifier. This pin should be connected to the remote Core sense pin of the processor, VDD_SENSE. FB_PSI 18 In PSI mode this pin is internally shorted to the FB pin to augment the feedback compensation network for the lower phase count. FB 19 Inverting input to the internal error amplifier for the Core regulator. COMP 20 Output of the internal error amplifier for the Core regulator. FS 21 This is a dual function pin. A resistor, placed from FS to either Ground or VCC sets the switching frequency of both controllers. Refer to Equation 1 for proper resistor calculation. These two pins are used to compensate the inductor current sensing for fluctuations due to temperature. R T = 10  10.61 – 1.035 log  f s   (EQ. 1) If the resistor is tied to ground, the number of active phases in PSI mode is 1. If the resistor is tied to VCC, the number of active phases in PSI mode is 2. APA 22 Allows for programming of the Auto Phase Alignment threshold. A resistor in parallel with a capacitor to ground is used to set this threshold. ISENn+, ISENn-, ISEN_NB+, ISEN_NB- 23, 24, 25, 26, 27, 28, 53, 54, 55, 56, 57, 58, 59, 60 These pins are used for differentially sensing the corresponding channel output currents. The sensed currents are used for channel balancing, protection, and core load line regulation. Connect ISEN- to the node between the RC sense elements surrounding the inductor of the respective channel. Tie the ISEN+ pin to the other end of the sense capacitor through a resistor, RISEN. The voltage across the sense capacitor is proportional to the inductor current. The sense current, therefore, is proportional to the inductor current and scaled by the DCR of the inductor and RISEN. PHASE1, PHASE2 40, 29 Connect these pins to the sources of the corresponding upper MOSFETs. These pins are the return path for the upper MOSFET drives. GND 30, 32, 61 Bias and reference ground for the IC. The GND connection for the ISL6329 is made with three pins and through the thermal pad on the bottom of the package. EN 31 This pin is a threshold-sensitive (approximately 0.85V) system enable input for the controller. Held low, this pin disables both CORE and NB controller operation. Pulled high, the pin enables both controllers for operation. A second function of this pin is to provide driver bias monitor for external drivers. A resistor divider with the center tap connected to this pin from the drive bias supply prevents enabling the controller before insufficient bias is provided to external driver. The resistors should be selected such that when the PORtrip point of the external driver is reached, the voltage at this pin meets the above mentioned threshold level. UGATE1, UGATE2 39, 33 Connect this pin to the corresponding upper MOSFET gate. This pin provides the PWM-controlled gate drive for the upper MOSFET and is monitored for shoot-through prevention purposes. FN7800 Rev 0.00 April 19, 2011 Page 6 of 38 ISL6329 Functional Pin Descriptions (Continued) PIN NAME PIN NUMBER DESCRIPTION BOOT1, BOOT2 38, 34 This pin provides the bias voltage for the corresponding upper MOSFET drive. Connect this pin to appropriately-chosen external bootstrap capacitor. The internal bootstrap diode connected to the PVCC pin provides the necessary bootstrap charge. LGATE1, LGATE2 37, 35 Connect this pin to the corresponding MOSFET’s gate. This pin provides the PWM-controlled gate drive for the lower MOSFET. This pin is also monitored by the adaptive shoot-through protection circuitry to determine when the lower MOSFET has turned off. GVOT 36 The power supply pin for the multiphase internal MOSFET drivers. In normal operation, this pin is shorted to the PVCC pin. While in PSI mode, this pin is tied to the output of the internal LDO for Gate Drive Voltage Optimization. Decouple this pin with a quality 2.2F ceramic capacitor. VDDPWRGD 41 During normal operation, this pin indicates whether both output voltages are within specified overvoltage and undervoltage limits. If either output voltage exceeds these limits or a reset event occurs (such as an overcurrent event), the pin is pulled low. This pin is always low prior to the end of soft-start. PWROK 42 System wide Power Good input signal. If this pin is low, the two SVI bits are decoded to determine the “metal VID”. When pin is high, the SVI is actively running its protocol. PWM3, PWM4, PWM5, PWM6 46, 45, 44, 43 Pulse-width modulation outputs. Connect these pins to the PWM input pins of an Intersil driver IC if 3, 4, 5, or 6-phase operation is desired. Connect the ISEN- pins of the channels not desired to +5V to disable them. Channels must be disabled in decremental order. PHASE_NB 47 Connect this pin to the source of the corresponding upper MOSFET. This pin is the return path for the upper MOSFET drive. This pin is used to monitor the voltage drop across the upper MOSFET for overcurrent protection. UGATE_NB 48 Connect this pin to the corresponding upper MOSFET gate. This pin provides the PWM-controlled gate drive for the upper MOSFET and is monitored for shoot-through prevention purposes. BOOT_NB 49 This pin provides the bias voltage for the corresponding upper MOSFET drive. Connect this pin to appropriately-chosen external bootstrap capacitor. The internal bootstrap diode connected to the PVCC pin provides the necessary bootstrap charge. LGATE_NB 50 Connect this pin to the corresponding MOSFET’s gate. This pin provides the PWM-controlled gate drive for the lower MOSFET. This pin is also monitored by the adaptive shoot-through protection circuitry to determine when the lower MOSFET has turned off. PVCC 51 The power supply pin for the internal MOSFET drivers. Connect this pin to +12V. This pin is the input to the internal LDO for GVOT. Decouple this pin with a quality 1.0F ceramic capacitor. I2C_ADDR 52 A resistor tied from this pin to either ground or VCC will set the I2C address. There are eight I2C programmable addresses. Ordering Information PART NUMBER (Notes 1, 2, 3) PART MARKING TEMP. (°C) PACKAGE (Pb-free) PKG. DWG. # ISL6329CRZ ISL6329 CRZ 0 to +70 60 Ld 7x7 QFN L60.7x7 ISL6329IRZ ISL6329 IRZ -40 to +85 60 Ld 7x7 QFN L60.7x7 NOTES: 1. Add “-T*” suffix for tape and reel. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), please see device information page for ISL6329. For more information on MSL please see techbrief TB363. FN7800 Rev 0.00 April 19, 2011 Page 7 of 38 ISL6329 Table of Contents Absolute Maximum Ratings.............................................................. 9 Undervoltage Detection............................................................. 22 Overcurrent Protection .............................................................. 22 Individual Channel Overcurrent Limiting ................................ 23 Thermal Information .......................................................................... 9 I2C Bus Interface .............................................................................. 23 Recommended Operating Conditions ............................................. 9 Data Validity ................................................................................ START and STOP Conditions..................................................... Byte Format................................................................................. Acknowledge............................................................................... ISL6329 I2C Slave Address....................................................... Communicating Over the I2C Bus ............................................ Writing to the Internal Registers.............................................. Reading from the Internal Registers ....................................... Resetting the Internal Registers .............................................. I2C Read and Write Protocol .................................................... Register Bit Definitions.............................................................. Electrical Specifications ....................................................................9 Timing Diagram ................................................................................ 12 Operation ........................................................................................... 12 Multiphase Power Conversion .................................................. 12 Interleaving.................................................................................. 12 Active Pulse Positioning Modulated PWM Operation ........... 13 Adaptive Phase Alignment (APA)............................................. 13 PWM Operation........................................................................... 13 Continuous Current Sampling................................................... 14 Temperature Compensated Current Sensing......................... 15 Channel-Current Balance........................................................... 15 Serial VID Interface (SVI) ................................................................. 15 Pre-PWROK METAL VID ............................................................. 15 SVI Mode ...................................................................................... 16 Power Savings Mode: PSI_L...................................................... 17 Voltage Regulation ..................................................................... 18 Load-Line (Droop) Regulation ................................................... 18 Droop Control .............................................................................. 18 Output-Voltage Offset Programming ....................................... 19 Dynamic VID ................................................................................ 19 Advanced Adaptive Zero Shoot-Through Deadtime Control (Patent Pending) .......................................................................... 19 Initialization....................................................................................... 20 Power-On Reset .......................................................................... 20 Enable Comparator .................................................................... 20 Phase Detection.......................................................................... 20 Soft-Start Output Voltage Targets ............................................ 20 Soft-Start...................................................................................... 20 Pre-Biased Soft-Start.................................................................. 21 General Design Guide ...................................................................... 28 Power Stages .............................................................................. Internal Bootstrap Device.......................................................... Gate Drive Voltage Versatility ................................................... Package Power Dissipation ...................................................... Inductor DCR Current Sensing Component Fine Tuning ..... Loadline Regulation Resistor ................................................... Compensation With Loadline Regulation............................... Compensation Without Loadline Regulation ......................... Output Filter Design ................................................................... Switching Frequency .................................................................. Input Capacitor Selection.......................................................... 28 29 29 29 30 31 31 32 32 33 33 Layout Considerations ..................................................................... 34 Routing UGATE, LGATE, and PHASE Traces............................ 35 Current Sense Component Placement and Trace Routing ....... 35 Thermal Management ............................................................... 35 Revision History ................................................................................ 37 Products ............................................................................................. 37 Package Outline Drawing ............................................................... 38 Fault Monitoring and Protection..................................................... 21 Power Good Signal ..................................................................... 21 Overvoltage Protection .............................................................. 21 Pre-POR Overvoltage Protection............................................... 21 FN7800 Rev 0.00 April 19, 2011 23 23 24 24 24 24 24 25 25 26 26 Page 8 of 38 ISL6329 Absolute Maximum Ratings Thermal Information Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +15V Absolute Boot Voltage (VBOOT) . . . . . . . . . . . . . . . GND - 0.3V to GND + 36V Phase Voltage (VPHASE). . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 30V (PVCC = 12V) GND - 8V ( f 0 2 LC C2 Case 1: RC CC 0.66  V IN C C = --------------------------------------------------2    V PP  R FB  f 0 COMP FB C1 1 1 --------------------------------  f 0 < -----------------------------------2    C  ESR 2 LC ISL6329 RFB R1 2    f 0  V pp  L  C R C = R FB  -------------------------------------------------------0.66  V IN Case 2: V PP   2    2  f 02  L  C R C = R FB  ----------------------------------------------------------------0.66  V (EQ. 38) IN VSEN 0.66  V IN C C = ------------------------------------------------------------------------------------2 2  2     f 0  V PP  R FB  L  C FIGURE 24. COMPENSATION CIRCUIT WITHOUT LOAD-LINE REGULATION The first step is to choose the desired bandwidth, f0, of the compensated system. Choose a frequency high enough to assure adequate transient performance but not higher than 1/3 of the switching frequency. The type-III compensator has an extra high-frequency pole, fHF. This pole can be used for added noise rejection or to assure adequate attenuation at the error-amplifier high-order pole and zero frequencies. A good general rule is to choose fHF = 10f0, but it can be higher if desired. Choosing fHF to be lower than 10f0 can cause problems with too much phase shift below the system bandwidth. C  ESR R 1 = R FB  -------------------------------------------L  C – C  ESR L  C – C  ESR C 1 = -------------------------------------------R FB 0.75  V IN C 2 = -------------------------------------------------------------------------------------------------- 2    2  f 0  f HF   L  C   R FB  V PP (EQ. 37) 2 V PP   2  f 0  f HF  L  C  R FB   R C = ---------------------------------------------------------------------------------------0.75  V IN   2    f HF  L  C – 1  0.75  V IN   2    f HF  L  C – 1  C C = -------------------------------------------------------------------------------------------------- 2    2  f 0  f HF   L  C   R FB  V PP In the solutions to the compensation equations, there is a single degree of freedom. For the solutions presented in Equation 38, RFB is selected arbitrarily. The remaining compensation components are then selected according to Equation 38. In Equation 38, L is the per-channel filter inductance divided by the number of active channels; C is the sum total of all output capacitors; ESR is the equivalent-series resistance of the bulk output-filter capacitance; and VPP is the peak-to-peak sawtooth signal amplitude as described in “Electrical Specifications” on page 9. 1 f 0 > ------------------------------------2    C  ESR Case 3: 2    f 0  V pp  L R C = R FB  --------------------------------------------0.66  V IN  ESR 0.66  V IN  ESR  C C C = ---------------------------------------------------------------2    V PP  R FB  f 0  L Output Filter Design The output inductors and the output capacitor bank together to form a low-pass filter responsible for smoothing the pulsating voltage at the phase nodes. The output filter also must provide the transient energy until the regulator can respond. Because it has a low bandwidth compared to the switching frequency, the output filter limits the system transient response. The output capacitors must supply or sink load current while the current in the output inductors increases or decreases to meet the demand. In high-speed converters, the output capacitor bank is usually the most costly (and often the largest) part of the circuit. Output filter design begins with minimizing the cost of this part of the circuit. The critical load parameters in choosing the output capacitors are the maximum size of the load step, I, the load-current slew rate, di/dt, and the maximum allowable output-voltage deviation under transient loading, VMAX. Capacitors are characterized according to their capacitance, ESR, and ESL (equivalent series inductance). At the beginning of the load transient, the output capacitors supply all of the transient current. The output voltage will initially deviate by an amount approximated by the voltage drop across the ESL. As the load current increases, the voltage drop across the ESR increases linearly until the load current reaches its final value. The capacitors selected must have sufficiently low ESL and ESR so that the total output-voltage deviation is less than the allowable maximum. Neglecting the contribution of inductor current and regulator response, the output voltage initially deviates by an amount: di V  ESL  ----- + ESR  I dt (EQ. 39) The filter capacitor must have sufficiently low ESL and ESR so that V < VMAX. FN7800 Rev 0.00 April 19, 2011 Page 32 of 38 ISL6329 Most capacitor solutions rely on a mixture of high frequency capacitors with relatively low capacitance in combination with bulk capacitors having high capacitance but limited high-frequency performance. Minimizing the ESL of the high-frequency capacitors allows them to support the output voltage as the current increases. Minimizing the ESR of the bulk capacitors allows them to supply the increased current with less output voltage deviation. RT (k) 1k The ESR of the bulk capacitors also creates the majority of the output-voltage ripple. As the bulk capacitors sink and source the inductor AC ripple current (see “Interleaving” on page 12 and Equation 3), a voltage develops across the bulk capacitor ESR equal to IC,PP (ESR). Thus, once the output capacitors are selected, the maximum allowable ripple voltage, VPP(MAX), determines the lower limit on the inductance. (EQ. 40) Since the capacitors are supplying a decreasing portion of the load current while the regulator recovers from the transient, the capacitor voltage becomes slightly depleted. The output inductors must be capable of assuming the entire load current before the output voltage decreases more than VMAX. This places an upper limit on inductance. Equation 41 gives the upper limit on L for the cases when the trailing edge of the current transient causes a greater output-voltage deviation than the leading edge. Equation 42 addresses the leading edge. Normally, the trailing edge dictates the selection of L because duty cycles are usually less than 50%. Nevertheless, both inequalities should be evaluated, and L should be selected based on the lower of the two results. In each equation, L is the per-channel inductance, C is the total output capacitance, and N is the number of active channels. 2  N  C  VO L  ---------------------------------  V MAX –  I  ESR   I  2 (EQ. 41) 1.25  N  C-  V   L  ---------------------------MAX –  I  ESR    V IN – V O  I  2 (EQ. 42) 10 10k 100k 1M 10M SWITCHING FREQUENCY (Hz) FIGURE 25. R T vs SWITCHING FREQUENCY Input Capacitor Selection The input capacitors are responsible for sourcing the AC component of the input current flowing into the upper MOSFETs. Their RMS current capacity must be sufficient to handle the AC component of the current drawn by the upper MOSFETs which is related to duty cycle and the number of active phases. 0.3 INPUT-CAPACITOR CURRENT (IRMS/IO) V – N  V  OUT  V OUT  IN L  ESR  -------------------------------------------------------------------f S  V IN  V PP MAX  100 IL,PP = 0 IL,PP = 0.25 IO IL,PP = 0.5 IO IL,PP = 0.75 IO 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 DUTY CYCLE (VO/VIN) Switching Frequency There are a number of variables to consider when choosing the switching frequency, as there are considerable effects on the upper MOSFET loss calculation. These effects are outlined in “MOSFETs” on page 28, and they establish the upper limit for the switching frequency. The lower limit is established by the requirement for fast transient response and small output-voltage ripple as outlined in “Output Filter Design” on page 32. Choose the lowest switching frequency that allows the regulator to meet the transient-response requirements. Switching frequency is determined by the selection of the frequency-setting resistor, RT. Figure 25 and Equation 43 are provided to assist in selecting the correct value for RT. R T = 10 10.61 –  1.035  log  f S    FN7800 Rev 0.00 April 19, 2011 FIGURE 26. NORMALIZED INPUT-CAPACITOR RMS CURRENT vs DUTY CYCLE FOR 4-PHASE CONVERTER For a four-phase design, use Figure 26 to determine the inputcapacitor RMS current requirement set by the duty cycle, maximum sustained output current (IO), and the ratio of the peak-to-peak inductor current (IL,PP) to IO. Select a bulk capacitor with a ripple current rating which will minimize the total number of input capacitors required to support the RMS current calculated. The voltage rating of the capacitors should also be at least 1.25 times greater than the maximum input voltage. Figures 27 and 28 provide the same input RMS current information for three-phase and two-phase designs respectively. Use the same approach for selecting the bulk capacitor type and number. (EQ. 43) Page 33 of 38 ISL6329 INPUT-CAPACITOR CURRENT (IRMS/IO) 0.3 IL,PP = 0 IL,PP = 0.5 IO IL,PP = 0.25 IO IL,PP = 0.75 IO Careful component selection, tight layout of the critical components, and short, wide circuit traces minimize the magnitude of voltage spikes. There are two sets of critical components in a DC/DC converter using a ISL6329 controller. The power components are the most critical because they switch large amounts of energy. Next are small signal components that connect to sensitive nodes or supply critical bypassing current and signal coupling. 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 DUTY CYCLE (VIN/VO) FIGURE 27. NORMALIZED INPUT-CAPACITOR RMS CURRENT FOR 3-PHASE CONVERTER Low capacitance, high-frequency ceramic capacitors are needed in addition to the input bulk capacitors to suppress leading and falling edge voltage spikes. The spikes result from the high current slew rate produced by the upper MOSFET turn on and off. Select low ESL ceramic capacitors and place one as close as possible to each upper MOSFET drain to minimize board parasitics and maximize suppression. INPUT-CAPACITOR CURRENT (IRMS/IO) 0.3 When placing the MOSFETs, try to keep the source of the upper FETs and the drain of the lower FETs as close as thermally possible. Input high-frequency capacitors, CHF, should be placed close to the drain of the upper FETs and the source of the lower FETs. Input bulk capacitors, CBULK, case size typically limits following the same rule as the high-frequency input capacitors. Place the input bulk capacitors as close to the drain of the upper FETs as possible and minimize the distance to the source of the lower FETs. Locate the output inductors and output capacitors between the MOSFETs and the load. The high-frequency output decoupling capacitors (ceramic) should be placed as close as practicable to the decoupling target, making use of the shortest connection paths to any internal planes, such as vias to GND next or on the capacitor solder pad. 0.2 0.1 IL,PP = 0 IL,PP = 0.5 IO IL,PP = 0.75 IO 0 The power components should be placed first, which include the MOSFETs, input and output capacitors, and the inductors. It is important to have a symmetrical layout for each power train, preferably with the controller located equidistant from each. Symmetrical layout allows heat to be dissipated equally across all power trains. Equidistant placement of the controller to the CORE and NB power trains it controls through the integrated drivers helps keep the gate drive traces equally short, resulting in equal trace impedances and similar drive capability of all sets of MOSFETs. 0 0.2 0.4 0.6 0.8 1.0 DUTY CYCLE (VIN/VO) FIGURE 28. NORMALIZED INPUT-CAPACITOR RMS CURRENT FOR 2-PHASE CONVERTER Layout Considerations MOSFETs switch very fast and efficiently. The speed with which the current transitions from one device to another causes voltage spikes across the interconnecting impedances and parasitic circuit elements. These voltage spikes can degrade efficiency, radiate noise into the circuit and lead to device overvoltage stress. Careful component selection, layout, and placement minimizes these voltage spikes. Consider, as an example, the turnoff transition of the upper PWM MOSFET. Prior to turnoff, the upper MOSFET was carrying channel current. During the turnoff, current stops flowing in the upper MOSFET and is picked up by the lower MOSFET. Any inductance in the switched current path generates a large voltage spike during the switching interval. FN7800 Rev 0.00 April 19, 2011 The critical small components include the bypass capacitors (CFILTER) for VCC and PVCC, and many of the components surrounding the controller including the feedback network and current sense components. Locate the VCC/PVCC bypass capacitors as close to the ISL6329 as possible. It is especially important to locate the components associated with the feedback circuit close to their respective controller pins, since they belong to a high-impedance circuit loop, sensitive to EMI pick-up. A multi-layer printed circuit board is recommended. Figure 29 shows the connections of the critical components for the converter. Note that capacitors CIN and COUT could each represent numerous physical capacitors. Dedicate one solid layer, usually the one underneath the component side of the board, for a ground plane and make all critical component ground connections with vias to this layer. Dedicate another solid layer as a power plane and break this plane into smaller islands of common voltage levels. Keep the metal runs from the PHASE terminal to output inductors short. The power plane should support the input power and output power nodes. Use copper filled polygons on the top and bottom circuit layers for the phase nodes. Use the remaining printed circuit layers for small signal wiring. Page 34 of 38 ISL6329 Routing UGATE, LGATE, and PHASE Traces Great attention should be paid to routing the UGATE, LGATE, and PHASE traces since they drive the power train MOSFETs using short, high current pulses. It is important to size them as large and as short as possible to reduce their overall impedance and inductance. They should be sized to carry at least one ampere of current (0.02” to 0.05”). Going between layers with vias should also be avoided, but if so, use two vias for interconnection when possible. Extra care should be given to the LGATE traces in particular since keeping their impedance and inductance low helps to significantly reduce the possibility of shoot-through. It is also important to route each channels UGATE and PHASE traces in as close proximity as possible to reduce their inductances. Current Sense Component Placement and Trace Routing One of the most critical aspects of the ISL6329 regulator layout is the placement of the inductor DCR current sense components and traces. The R-C current sense components must be placed as close to their respective ISEN+ and ISEN- pins on the ISL6329 as possible. The sense traces that connect the R-C sense components to each side of the output inductors should be routed on the bottom of the board, away from the noisy switching components located on the top of the board. These traces should be routed side by side, and they should be very thin traces. It’s important to route these traces as far away from any other noisy traces or planes as possible. These traces should pick up as little noise as possible. Thermal Management For maximum thermal performance in high current, high switching frequency applications, connecting the thermal GND pad of the ISL6329 to the ground plane with multiple vias is recommended. This heat spreading allows the part to achieve its full thermal potential. It is also recommended that the controller be placed in a direct path of airflow if possible to help thermally manage the part. FN7800 Rev 0.00 April 19, 2011 Page 35 of 38 ISL6329 VCC +5V ISL6614 BOOT1 PWM1 PWM2 +12V CS1- ISEN1- VCC RSVD TCOMP1 CS1+ ISEN1+ CS2- ISEN2- CS2+ ISEN2+ CS3- ISEN3- CS3+ ISEN3+ CS4- ISEN4- CS4+ ISEN4+ CS5- ISEN5- CS5+ ISEN5+ CS6- ISEN6- CS6+ ISEN6+ CS_NB- TCOMP2 PWM3 PWM4 PWM5 PWM6 PVCC GND UGATE2 PHASE2 +12V CS4CS4+ +12V PGND LGATE2 ISL6614 BOOT1 PWM1 PWM2 +12V RNTC* UGATE1 PHASE1 UGATE1 PHASE1 CS1CS1+ CS5CS5+ LGATE1 PWM5 PWM6 +12V PVCC VCC BOOT2 BOOT2 +12V +12V GND UGATE2 PHASE2 LGATE2 I2C_ADDR FS UGATE2 PHASE2 CS2CS2+ CS6CS6+ PGND LGATE2 VSEN RGND OFS CORE_FB OCP ENABLE PVCC BOOT2 +12V BOOT1 LGATE1 LGATE1 +12V VCC PWM3 PWM4 PWM5 PWM6 ISL6329 ISEN_NB+ +12V CS3CS3+ GVOT ISEN_NB- CS_NB+ UGATE1 PHASE1 PWM3 PWM4 BOOT_NB VDDIO SVC SVD SCL SDA PWROK VDDPWRGD CORE +12V UGATE_NB PHASE_NB LGATE_NB EN APA DRPCTRL CPU CS_NBCS_NB+ NORTHBRIDGE VSEN_NB FB_NB RED COMPONENTS: LOCATE CLOSE TO IC TO MINIMIZE CONNECTION PATH BLUE COMPONENTS: LOCATE NEAR LOAD (MINIMIZE CONNECTION PATH) COMP_NB CORE_FB FB_PSI FB MAGENTA COMPONENTS: LOCATE CLOSE TO SWITCHING TRANSISTORS (MINIMIZE CONNECTION PATH) COMP GND KEY HEAVY TRACE ON CIRCUIT PLANE LAYER ISLAND ON POWER PLANE LAYER ISLAND ON CIRCUIT PLANE LAYER KELVIN TYPE TRACE/SENSE LINE (Keep these traces away from any switching nodes) VIA CONNECTION TO GROUND PLANE *LOCATE NTC RESISTOR CLOSE TO PHASE1 INDUCTOR FIGURE 29. PRINTED CIRCUIT BOARD POWER PLANES AND ISLANDS FN7800 Rev 0.00 April 19, 2011 Page 36 of 38 ISL6329 Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you have the latest Rev. DATE REVISION 4/19/11 FN7800.0 CHANGE Initial release. Products Intersil Corporation is a leader in the design and manufacture of high-performance analog semiconductors. The Company's products address some of the industry's fastest growing markets, such as, flat panel displays, cell phones, handheld products, and notebooks. Intersil's product families address power management and analog signal processing functions. Go to www.intersil.com/products for a complete list of Intersil product families. *For a complete listing of Applications, Related Documentation and Related Parts, please see the respective device information page on intersil.com: ISL6329 To report errors or suggestions for this datasheet, please go to www.intersil.com/askourstaff FITs are available from our website at http://rel.intersil.com/reports/search.php © Copyright Intersil Americas LLC 2011. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN7800 Rev 0.00 April 19, 2011 Page 37 of 38 ISL6329 Package Outline Drawing L60.7x7 60 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE Rev 1, 2/10 4X 5.6 7.00 A 6 PIN #1 INDEX AREA 56X 0.40 B 46 6 60 1 45 PIN 1 INDEX AREA 7.00 5. 60 31 (4X) 15 0.15 16 30 60X 0 . 40 TOP VIEW 0.10 M C A B 0.1672 4 0.20 BOTTOM VIEW ( 60X 0 . 60) 0.2818 SEE DETAIL "X" ( 60X 0 . 20 ) 0.10 C C SEATING PLANE 0.08 C 1.00 MAX ( 6 . 8 TYP ) SIDE VIEW ( 5 . 60 ) ( 56X 0 . 4 ) C 0.1672 0 . 2 REF 5 0 . 00 MIN. 0 . 05 MAX. TYPICAL RECOMMENDED LAND PATTERN DETAIL "X" 0.4818 NOTES: 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to ASME Y14.5m-1994. 3. Unless otherwise specified, tolerance : Decimal ± 0.10 Angular ±2.50° 4. Dimension applies to the metallized terminal and is measured between 0.015mm and 0.30mm from the terminal tip. 5. Tiebar shown (if present) is a non-functional feature. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 indentifier may be either a mold or mark feature. FN7800 Rev 0.00 April 19, 2011 Page 38 of 38
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