RHRP650CC

RHRP640CC, RHRP650CC, RHRP660CC January 1998 File Number 4464 6A, 400V - 600V Hyperfast Dual Diodes RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics (t rr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted hepaticas planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA49057. Features • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . DUT VR(AVL)) L CURRENT SENSE Q1 R + VDD IL VAVL IL DUT VDD - IV t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 4 RHRP640CC, RHRP650CC, RHRP660CC TO-220AB 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE A ØP Q H1 D E1 45o D1 TERM. 4 E A1 INCHES SYMBOL A A1 b b1 c D D1 E E1 e e1 MIN 0.170 0.048 0.030 0.045 0.014 0.590 0.395 MAX 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 TYP 0.200 BSC 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112 MILLIMETERS MIN 4.32 1.22 0.77 1.15 0.36 14.99 10.04 MAX 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 TYP 5.08 BSC 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES 3, 4 2, 3 2, 3, 4 5 5 6 2 - L1 b1 b c L 60o 1 2 3 e e1 J1 H1 J1 L L1 ØP Q NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 7-97. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 5