CR7N65A4K

Silicon N-Channel Power MOSFET CR7N65 A4K General Description： CR7N65 A4K, the silicon N-channel Enhanced VDSS 650 V 7 A ID VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 108 W which reduce the conduction loss, improve switching RDS(ON)Typ 1.2 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 650 V 7 A Continuous Drain Current T C = 100 °C 4.4 A Pulsed Drain Current 28 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 350 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 108 W Derating Factor above 25°C 0.8 W/℃ 150，–55 to 150 ℃ Continuous Drain Current ID a1 IDM VGS EAS a2 dv/dt a3 PD TJ，T stg Operating Junction and Storage Temperature Range W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 1 0 2 0 2 0 V0 1 CR7N65 A4K Electrical Characteristics（T J= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ IDSS Drain to Source Leakage Current VDS =650V, V GS= 0V, TJ = 25℃ VDS =520V, V GS= 0V, TJ = 125℃ IGSS(F) Gate to Source Forward Leakage IGSS(R) Gate to Source Reverse Leakage Rating Unit s Min. Typ. Max. 650 -- -- V -- 0.7 -- V/℃ -- -- 1 µA -- -- 100 µA VGS =+30V -- -- 100 nA VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =3.5A VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA Rating Units Min. Typ. Max. -- 1.2 1.4 Ω 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions g fs Forward Transconductance VDS=15V, ID =3.5A C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 6.5 -- -- 1080 -- -- 75 -- -- 3.2 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions ID =7A VDD = 325V RG =10Ω ID =7A V DD =520V VGS = 10V W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Rating Min. Typ. Max. -- 18 -- -- 15 -- -- 34 -- -- 15 -- -- 24 -- -- 5.2 -- -- 11 -- Pag e 2 of 7 2020V01 Units ns nC CR7N65 A4K Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 7 A ISM Maximum Pulsed Current (Body Diode) -- -- 28 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 750 -- ns Qrr Reverse Recovery Charge -- 4640 -- nC IRRM Reverse Recovery Current -- 12.4 -- A IS =7A,V GS =0V IS =7A,Tj = 25℃ dIF /dt=100A/us, VGS=0V Pulse width tp≤300µs,δ≤2% Symbol Parameter Max. Units R θ JC Junction-to-Case 1.16 ℃/W R θ JA Junction-to-Ambient 100 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10mH, ID=8.4A, Start TJ=25℃ a3 ：ISD =7A,di/dt ≤100A/us,VDD≤BVDS, Start T J=25℃ a4 ：Recommend soldering temperature defined by IPC/JEDEC J-STD 020 a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 3 of 1 0 2 0 2 0 V0 1 CR7N65 A4K Characteristics Curve： Figure.1 Maximum Forward Bias Safe Operating Area Figure.2 Maximum Power Dissipation vs Case Temperature Figure.3 Maximum Continuous Drain Current vs Case Temperature Figure.4 Typical Output Characteristics Figure.5 Maximum Effective Thermal Impedance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 4 of 1 0 2 0 2 0 V0 1 CR7N65 A4K Figure.6 Typical Transfer Characteristics Figure.8 Typical Drain to Source ON Resistance vs Drain Current Figure.7 Typical Body Diode Transfer Characteristics Figure.9 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 5 of 1 0 2 0 2 0 V0 1 CR7N65 A4K Figure.10 Typical Theshold Voltage vs Junction Temperature Figure 11 Typical Breakdown Voltage vs Junction Temperature Figure.12 Typical Capacitance vs Drain to Source Voltage Figure.13 Typical Gate Charge vs Gate to Source Voltage W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 6 of 1 0 2 0 2 0 V0 1 CR7N65 A4K Test Circuit and Waveform Figure 14. Gate Charge Test Circuit Figure 16. Resistive Switching Test Circuit Figure 15. Gate Charge Waveforms Figure 17. Resistive Switching Waveforms W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 7 of 1 0 2 0 2 0 V0 1 CR7N65 A4K Figure 18. Diode Reverse Recovery Test Circuit Figure20.Unclamped Inductive Switching Test Circuit Figure 19. Diode Reverse Recovery Waveform Figure21.Unclamped Inductive Switching Waveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 8 of 1 0 2 0 2 0 V0 1 CR7N65 A4K Package Information Items Values(mm) MIN MAX A 6.30 6.90 A1 0 0.16 B 5.70 6.30 C 2.10 2.50 D 0.30 0.70 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.40 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 9 of 1 0 2 0 2 0 V0 1 CR7N65 A4K The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP ≤ ≤ ≤ 0.1% 0.1% 0.01% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ Limit ○：Means the hazardous material is under the criterion of 2011/65/EU. Note ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. 2. 3. 4. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn Tel: +86 0510-85807228 Fax: +86- 0510-85800864 HTU Marketing Part： Post：214061 UTH Tel： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 10 of 10 2020V01