CRJQ80N65F

CRJQ80N65F 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 77mΩ, 43A Features Product Summary • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency VDS 650V • Better efficiency due to very low FOM RDS(on)_typ 77mΩ • Ultra-fast body diode ID 43A • Qualified for industrial grade applications according to JEDEC Applications 100% DVDS Tested • LED/LCD/PDP TV and monitor Lighting 100% Avalanche Tested • Solar/Renewable/UPS-Micro Inverter System • On-Board battery Chargers • Power Supply Package Marking and Ordering Information Part # Marking Package Packing Reel Size Tape Width Qty CRJQ80N65F CRJQ80N65F TO-247-3L Tube N/A N/A 25/30pcs Symbol Value Unit VDS 650 V 43 A Absolute Maximum Ratings(at Tj = 25 °C, unless otherwise specified) Parameter Drain-source voltage Continuous drain current 1) TC = 25°C ID TC = 100°C 32.3 2) ID pulse 172 A EAS 750 mJ dv/dt 50 V/ns Gate-Source voltage VGS ±30 V Power dissipation (TC = 25°C) Ptot 470 W IS 43 A IS pulse 172 A Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=30mH) MOSFET dv/dt ruggedness Continuous diode forward current(TC = 25°C) Diode pulse current 2) Recovery diode dv/dt (TC = 25°C) 3) Maximum diode commutation speed Operating junction and storage temperature dv/dt 50 V/ns diF/dt 900 A/µs Tj , T stg -55...+150 °C 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO-220 equivalent 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG Rev3.0 ©China Resources Microelectronics (Chongqing) Limited Page 1 CRJQ80N65F 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 77mΩ, 43A Thermal Resistance Parameter Symbol Thermal resistance, junction – case Thermal resistance, junction – ambient Value Unit min. typ. max. RthJC - 0.182 0.27 °C/W RthJA - - 41 °C/W Test Condition Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol Value min. typ. max. Unit Test Condition Static Characteristic Drain-source breakdown voltage BVDSS 650 - - V VGS=0V, ID=250uA Gate threshold voltage VGS(th ) 3.3 - 4.5 V VDS=VGS,ID=250uA VDS=650V,VGS=0V Zero gate voltage drain current IDSS IGSS Gate-source leakage current - - 5 - 1000 - - 0.3 100 µA Tj=25°C Tj=150°C nA VGS=±30V,VDS=0V VGS=10V, ID=21.5A, Drain-source on-state resistance RDS(on) - 77 90 - 203 - gfs - 30 - Input Capacitance Ciss - 3435 - Output Capacitance Coss - 137 - Reverse Transfer Capacitance Crss - 27 - Gate Total Charge QG - 84 - Gate-Source charge Qgs - 28 - Gate-Drain charge Qgd - 36 - Vplateau - 7.2 - td(on) - 89 - tr - 131 - td(off) - 204 - tf - 69 - Rgint - 0.8 - Transconductance mΩ Tj=25°C Tj=150°C S VDS=20V,ID=21.5A pF VGS=0V, VDS=100V, f=1MHz Dynamic Characteristic Gate plateau voltage Turn-on delay time Rise time Turn-off delay time Fall time Gate resistance Rev3.0 nC VGS=10V, VDS=480V, ID=21.5A V ns VGS=10V, ID=21.5A, VDS=400V, Rg=27Ω Ω f=1MHz ©China Resources Microelectronics (Chongqing) Limited Page 2 CRJQ80N65F 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 77mΩ, 43A Body Diode Characteristic Parameter Symbol Unit typ. max. VSD 0.7 0.92 1.2 V Body Diode Reverse Recovery Time trr - 113 - ns Body Diode Reverse Recovery Charge Qrr - 0.61 - uC Body Diode Reverse Recovery Peak Current Irrm - 10.1 - A Body Diode Forward Voltage Rev3.0 Value min. ©China Resources Microelectronics (Chongqing) Limited Test Condition VGS=0V,ISD=21.5A Isd=21.5A dI/dt=100A/us,Vds=400V Page 3 CRJQ80N65F 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 77mΩ, 43A Typical Performance Characteristics Fig 1. Output Characteristics (Tj=25℃ ℃) Fig 2. Output Characteristics (Tj=150℃ ℃) 120 70 10V, 9V 100 10V, 9V, 8V 50 7V 8V 40 ID (A) ID (A) 80 60 60 40 30 20 VGS=5V 0 5 10 5.5V 10 6V 0 6V 20 7V 15 20 5V 4.5V VGS=4V 0 25 0 5 10 VDS (V) 15 20 25 VDS (V) Fig 3: Transfer Characteristics Fig 4: VTH Vs Tj Temperature Characteristics 90 5 25°C 80 ID=250uA 4 70 50 VTH(V) ID (A) 60 150°C 40 30 3 2 20 1 10 0 -10 0 1 2 3 4 5 6 7 8 9 0 10 0 25 VGS (V) 100 125 150 Fig 6: Rds(on) vs. Temperature 3.0 120 RDS(on)_Normalized 110 RDS(on) (mΩ) 75 Temperature（ （℃） Fig 5: Rdson Vs Ids Characteristics(Tj=25℃ ℃) 100 VGS=10V 90 VGS=20V 80 VGS=10V ID=21.5A 2.5 2.0 1.5 1.0 70 60 0.5 0 10 20 30 40 ID (A) Rev3.0 50 50 60 70 80 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) ©China Resources Microelectronics (Chongqing) Limited Page 4 CRJQ80N65F 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 77mΩ, 43A Fig 7: BVDSS vs. Temperature Fig 8: Rds(on) vs Gate Voltage 1.08 800 1.06 700 600 RDS(on) (mΩ) 1.04 BVdss (Nomalized) ID=21.5A 1.02 1.00 0.98 500 400 300 150°C 200 0.96 100 0.94 0 -75 -50 -25 0 25 50 75 100 125 150 25°C 4 5 6 8 9 10 Fig 10: Gate Charge Characteristics Fig 9: Body-diode Forward Characteristics 12 1000 VDS=480V ID=21.5A 10 100 VGS (V) IS - Diode Current(A) 7 VGS (V) Tj - Junction Temperature (°C) 8 6 10 150˚C 1 4 25˚C 2 0 0.1 0 0.3 0.6 0.9 1.2 1.5 0 1.8 10 20 30 Fig 12: Safe Operating Area 100000 1000 VGS=0V f=1MHz 100 60 70 80 90 1us 10us Ciss 1000 100us Coss 10 1ms 10ms 1 10 DC Crss 0.1 1 0 Single pulse Tc=25˚C 0.01 0 100 200 300 VDS (V) Rev3.0 50 Limited by Rds(on) 100 ID (A) C - Capacitance (PF) Fig 11: Capacitance Characteristics 10000 40 Qg (nC) VSD - Diode Forward Voltage(V) 400 500 600 1 10 100 1000 VDS (V) ©China Resources Microelectronics (Chongqing) Limited Page 5 CRJQ80N65F 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 77mΩ, 43A 1 13: Max. Transient Thermal Impedance Fig D=0.5 ZthJC (˚C/W) 0.3 0.1 0.1 0.05 0.02 0.01 Single pulse Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 tp (sec) Rev3.0 ©China Resources Microelectronics (Chongqing) Limited Page 6 CRJQ80N65F 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 77mΩ, 43A Test Circuit & Waveform Rev3.0 ©China Resources Microelectronics (Chongqing) Limited Page 7 CRJQ80N65F 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 77mΩ, 43A Package Outline: TO-247 Symbol Dimensions In Millimeters Max. Min. Max. A 4.70 5.30 0.185 0.209 A1 2.20 2.60 0.087 0.102 A2 1.50 2.49 0.059 0.098 b 1.04 1.33 0.041 0.052 b2 1.90 2.41 0.075 0.095 b4 2.87 3.43 0.113 0.135 c 0.55 0.70 0.022 0.028 0.839 D 20.70 21.30 0.815 D1 16.25 17.65 0.640 0.695 D2 0.51 1.40 0.020 0.055 e Rev3.0 Dimensions In Inches Min. 5.44 BSC. 0.214 BSC. E 15.50 16.30 0.610 E1 13.08 14.16 0.515 0.642 0.557 E2 3.80 5.49 0.150 0.216 0.108 E3 1.00 2.75 0.039 L 19.72 20.32 0.776 0.800 L1 3.85 4.50 0.152 0.177 Q 5.25 6.25 0.207 0.246 P 3.50 3.70 0.138 0.146 S 6.04 6.30 0.238 0.248 ©China Resources Microelectronics (Chongqing) Limited Page 8 CRJQ80N65F 华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 77mΩ, 43A Marking NOTICE Different assembly house marking rule: Option1:XBBAAAAEE X —Assembly location code BB —Fab code AAAA —Lot code EE —Assembly code Option2:XBBAAAA X —Assembly location code BB —Fab code AAAA —Lot code Revision History Revison 3.0 Date 2022-08-19 Major changes Update Datasheet Template Disclaimer Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive, aviation/aerospace and life-support devices or systems. Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury, death or property damage. Customer are solely responsible for providing adequate safe measures when design their systems. CRM(CQ) reserves the right to improve product design, function and reliability without notice. Rev3.0 ©China Resources Microelectronics (Chongqing) Limited Page 9